Page 1
Bulletin I2402 rev. A 07/00
25RIA SERIES
MEDIUM POWER THYRISTORS Stud Version
Features
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1600V V
DRM
/ V
RRM
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
25A
Major Ratings and Characteristics
Parameters Units
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
I2t@
V
DRM/VRRM
t
q
T
J
@ 50Hz 420 398 A
@ 60Hz 440 415 A
50Hz 867 795 A2s
@ 60Hz 790 725 A2s
typical 110 µs
10 to 120 140 to 160
100 to 1200 1400 to 1600 V
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25RIA
25 25 A
85 85 °C
40 40 A
- 65 to 125 °C
Case Style
TO-208AA (TO-48)
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Page 2
25RIA Series
Bulletin I2402 rev. A 07/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage (1) repetitive peak voltage (2) @ T
10 100 150 20
20 200 300
40 400 500
60 600 700
25RIA 8 0 800 900 10
100 1000 1100
120 1200 1300
140 1400 1500
160 1600 1700
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2) For voltage pulses with t
≤ 5ms
p
On-state Conduction
Parameter Units Conditions
I
Max. average on-state current 25 25 A 180 ° sinusoidal conduction
T(AV)
@ Case temperature 85 85 °C
I
Max. RMS on-state current 4 0 40 A
T(RMS)
I
Max. peak, one-cycle 420 398 A t = 10ms No voltage
TSM
non-repetitive surge current 440 415 t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 867 795 A2s t = 10ms No voltage Initial TJ = TJ max.
2
I
√t Maximum I2√t for fusing 8670 7950 A2√s t = 0.1 to 10ms, no voltage reapplied, T
V
Low level value of threshold 0.99 0.99 V (16.7% x π x I
T(TO)1
voltage
High level value of threshold 1.40 1.15 (I > π x I
V
T(TO)
2
voltage
r
Low level value of on-state 10.1 11.73 mΩ (16.7% x π x I
t1
slope resistance
r
High level value of on-state 5.7 10.05 (I > π x I
t2
slope resistance
Max. on-state voltage 1.70 --- V Ipk= 79 A, TJ = 25°C
V
TM
I
Maximum holding current 130 mA TJ = 25°C. Anode supply 6V, resistive load,
H
Latching current 200
I
L
, max. repetitive V
VVmA
, maximum non- I
RSM
DRM/IRRM
= TJ max.
J
25RIA
10 to 120 140 to 160
350 335 t = 10ms 100% V
370 350 t = 8.3ms reapplied Sinusoidal half wave,
790 725 t = 8.3ms reapplied
615 560 t = 10ms 100% V
560 510 t = 8.3ms rea pplied
T(AV)
T(AV)
--- 1.80
RRM
RRM
< I < π x I
T(AV)
), TJ = TJ max.
< I < π x I
T(AV)
), TJ = TJ max.
), TJ = TJ max.
T(AV)
), TJ = TJ max.
T(AV)
= TJ max.
J
max.
2
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Page 3
Bulletin I2402 rev. A 07/00
Switching
Parameter 25RIA Units Conditions
di/dt Max. rate of rise of turned-on TJ = TJ max., VDM = rated V
current V
Typical turn-on time 0.9 TJ = 25°C,
t
gt
Typical reverse recovery time 4 µs TJ = TJ max.,
t
rr
t
Typical turn-off time 110 TJ = TJ max., ITM = I
q
≤ 600V 200 A/µs Gate pulse = 20V, 15Ω, t
DRM
≤ 800V 18 0 I
V
DRM
≤ 1000V 16 0
V
DRM
V
≤ 1600V 15 0
DRM
= (2x rated di/dt) A
TM
at = rated V
I
TM
DRM/VRRM
= I
, tp > 200µs, di/dt = -10A/µs
T(AV)
di/dt = -10A/µs, dv/dt = 20V/µs linear to
, gate bias 0V-100W
67% V
DRM
(*) tq = 10µsup to 600V, tq = 30µs up to 1600V available on special request.
DRM
= 6µs, tr = 0.1µs max.
p
, TJ = 125°C
, tp > 200µs, VR = 100V,
T(AV)
Blocking
Parameter 25RIA Units Conditions
dv/dt Max. critical rate of rise of 100 TJ = TJ max. linear to 100% rated V
off-state voltage 300 (*) TJ = TJ max. linear to 67% rated V
(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 25RIA160S90.
V/µs
25RIA Series
DRM
DRM
Triggering
Parameter 25RIA Units Conditions
PGMMaximum peak gate power 8.0 TJ = TJ max.
P
Maximum average gate power 2.0
G(AV)
I
Max. peak positive gate current 1.5 A TJ = TJ max.
GM
-V
Maximum peak negative 10 V TJ = TJ max.
GM
gate voltage
I
DC gate current required 90 TJ = - 65°C
GT
to trigger 60 mA T
35 T
V
DC gate voltage required 3.0 TJ = - 65°C
GT
to trigger 2.0 V T
1.0 V T
DC gate current not to trigger 2.0 mA TJ = TJ max., V
I
GD
V
DC gate voltage not to trigger 0.2 V TJ = TJ max.
GD
W
= 25°C
J
= 125°C
J
= 25°C
J
= 125°C
J
V
= rated value
DRM
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Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-tocathode applied
= rated value
DRM
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
anode-to-cathode applied
V
DRM
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Page 4
25RIA Series
Bulletin I2402 rev. A 07/00
Thermal and Mechanical Specification
Parameter 25RIA Units Conditions
TJMax. operating temperature range - 65 to 12 5 ° C
Max. storage temperature range - 6 5 to 125 ° C
T
stg
Max. thermal resistance, 0.75 K/W DC operation
R
thJC
junction to case
Max. thermal resistance, 0.35 K/W Mounting surface, smooth, flat and greased
R
thCS
case to heatsink
T Mounting torque to nut to device
20(27.5) 25 lbf-in Lubricated threads
0.23(0.32) 0.29 kgf.m (Non-lubricated threads)
2.3(3.1) 2.8 Nm
wt Approximate weight 14 (0.49) g (oz)
Case style TO-208AA (TO-48) See Outline Table
∆R
Conduction
thJC
(The following table shows the increment of thermal resistence R
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.17 0.13 K/W T
120° 0.21 0.22
90° 0.27 0.30
60° 0.40 0.42
30° 0.69 0.70
when devices operate at different conduction angles than DC)
thJC
= TJ max.
J
Ordering Information Table
Device Code
1 - Current code
2 - Essential part number
3 - Voltage code: Code x 10 = V
4 - None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M = Stud base TO-208AA (TO-48) M6 X 1
5 - Critical dv/dt: None = 300V/µs (Standard value)
4
25 RIA 160 M S90
2
1
3
(See Voltage Rating Table)
RRM
S90 = 1000V/µs (Special selection)
5
4
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Page 5
Outline Table
25RIA Series
Bulletin I2402 rev. A 07/00
Case Style TO-208AA (TO-48)
All dimensions in millimeters (inches)
130
120
110
100
90
Maximum Allowable Case Temperature (°C)
80
0 5 10 15 20 25 30
Fig. 1 - Current Ratings Characteristic
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25RIA Series (100 to 1200V)
R (DC) = 0.75 K/W
thJC
Conduction Angle
30°
60°
90°
120°
180°
Average On-state Current (A)
130
120
110
100
90
Maxi mum Allowab le Case Tempe rature (°C)
80
010203040
25RIA Series (100 to 12 00V)
R (DC) = 0.75 K/W
thJC
Conduction Per iod
30°
60°
90°
120°
180°
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristic
DC
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Page 6
25RIA Series
Bulletin I2402 rev. A 07/00
45
180°
40
120°
35
30
25
90°
60°
30°
RMS Limi t
20
15
10
5
Maximum Average On-state Power Loss (W)
0
0 5 10 15 20 25 30
Conduction Angle
25RIA Seri es
(100 to 1200V)
T = 125°C
J
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
60
55
50
45
40
35
DC
180°
120°
90°
60°
30°
30
RMS Limi t
25
20
15
10
5
Maximum Average On-state Power Loss (W)
0
0 5 10 15 20 25 30 35 40
Conductio n Period
25RIA Series
(100 to 1200V)
T = 125°C
J
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
R
t
h
S
A
2
K
/
W
3
K
/
W
4
K
/
W
5
K
/
W
7
K
/
W
=
1
K
/
W
D
e
l
t
a
R
0 255075100125
Maximum Allowable Ambient Temperature (°C)
R
= 1
t
h
S
A
K
/W -
2
K
/
W
3
K
/
W
4
K
/
W
5
K
/
W
7
K
/
W
D
elta R
0255075100125
Maximum All owable Ambien t Temperature (°C)
375
350
325
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
300
275
250
225
25RIA Series
200
Peak Half Sine Wave On-state Current (A)
(100 to 1200V)
175
110100
Number Of Equal Amplitude Half Cycl e Curr ent Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
6
450
Maxi mum Non Re peti tiv e Surge Current
425
400
375
350
Versus Pul se Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
325
300
275
250
225
200
25RIA Series
175
Peak Half Sine Wave On-state Current (A)
(100 to 1200V)
150
0.01 0.1 1
Pulse Train Duration ( s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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Page 7
1000
5
100
25RIA Series
Bulletin I2402 rev. A 07/00
25RIA Series
(100 to 1200V)
Instantaneous On-state Current (A)
130
25RIA Series (1400 to 1600V)
R (DC) = 0.75 K/W
thJC
120
110
100
30°
90
Maxi mum All owa ble Ca se T empe ra tu re ( °C )
80
0 5 10 15 20 25 30
60°
Conduction Ang le
90°
120°
Average On-state Current (A)
Fig. 8 - Current Ratings Characteristics
45
180°
40
120°
35
30
25
90°
60°
30°
RMS Limit
20
15
10
5
Maximum Average On-state Power Loss (W)
0
0 5 10 15 20 25 30
Average On-state Current (A)
10
T = 25°C
J
T = 125°C
J
1
0.511.522.
Instantaneous On-state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
130
120
110
100
90
180°
80
Maximu m Allo wabl e Case Temperatur e (°C)
70
0 5 10 15 20 25 30 35 40 45
Fig. 9 - Current Ratings Characteristics
R
1
Conduction Angle
25RIA Series
1
.
5
K
2
/
K
W
/
W
2
.
5
K
/
W
3
K
/
W
3
.
5
K
/
W
4
.
5
K
/
W
6
K
/
W
7
.
5
K
/
W
K
t
h
/
S
W
(1400 to 1600V)
T = 125°C
J
0255075100125
Maximum Allowable Ambient Temperature (°C)
Fig. 10 - On-state Power Loss Characteristics
25RIA Series (1400 to 1600V)
R (DC) = 0.75 K/W
thJC
Conduction Per iod
90°
60°
30°
120°
180°
Average On-state Current (A)
A
=
0
.
5
K
/
W
D
e
l
t
a
R
DC
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Page 8
25RIA Series
Bulletin I2402 rev. A 07/00
60
DC
180°
50
120°
90°
60°
40
30°
30
RMS Li mit
20
10
Maximum Average On-state Power Loss (W)
0
0 5 10 1 5 20 25 30 35 40
Average On-state Current (A)
R
Conducti on Per iod
25RIA Series
(1400 to 1600V)
T = 125°C
J
1
1
.
5
K
/
2
K
/
W
2
.
5
K
/
W
3
K
/
W
4
K
/
W
5
.
5
K
/
W
7
.
5
K
/
W
t
h
K
S
/
W
A
=
0
.
W
5
0255075100125
Maximum Allowable Ambient Temperature (°C)
Fig. 11 - On-state Power Loss Characteristics
K
/
W
D
e
l
t
a
R
375
350
325
300
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Init ial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
275
250
225
200
25RIA Series
175
Peak Half Sine Wave On-state Current (A)
(1400 to 1600V)
150
110100
Number Of Equal Amplitude Half Cycl e Curr ent Pulses (N)
Fig. 12 - Maximum Non-Repetitive Surge Current
1000
100
10
T = 25°C
J
T = 125°C
J
400
Maxi mum Non Repeti tiv e Surge Cur ren t
375
350
325
300
Versus Pul se Train Durat ion. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Vol tage Reappli ed
Rated V Reapplied
J
RRM
275
250
225
200
25RIA Series
175
Peak Half Sine Wave On-state Current (A)
(1400 to 1600V)
150
0.01 0.1 1
Pulse Train Duration (s)
Fig. 13 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1
0123456
25RIA Series
(1400 to 1600V)
Instantaneous On-state Voltage (V)
Fig. 14 - Forward Voltage Drop Characteristics
8
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Page 9
Bulletin I2402 rev. A 07/00
1
Steady St ate Val ue
R = 0.75 K/W
thJC
Transient Thermal Impedance Z (K/W)
0.01
Instantaneous Gate Voltage (V)
thJC
(DC Operation)
0.1
25RIA Series
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 15 - Thermal Impedance Z
100
Rectangul ar gate pul se
a) Recommended l oad line for
rated di/dt : 10V, 20ohms
tr <=0.5 µs, tp >= 6 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 65ohms
10
tr<=1 µs, tp >= 6 µs
(b)
Tj = 25 °C
1
VGD
0.1
IGD
0.001 0 .01 0.1 1 10 100
Tj = 125 °C
Instantaneous Gate Current (A)
(a)
Tj = -65 °C
25RIA Series Frequency Limited by PG(AV)
Characteristics
thJC
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
(1)
Fig. 16 - Gate Characteristics
25RIA Series
(4)
(3)
(2)
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