Datasheet 25FR120 Specification

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Standard Recovery Diodes,

DO-4 (DO-203AA)

PRIMARY CHARACTERISTICS

I

F(AV)

Package DO-4 (DO-203AA)

Circuit configuration Single

(Stud Version), 25 A

FEATURES

• High surge current capability

• Stud cathode and stud anode version

• Wide current range

• Types up to 1200 V V

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• Battery charges

• Converters

25 A

• Power supplies

• Machine tool controls

VS-25F(R) Series

Vishay Semiconductors

RRM

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

V

RRM

T

J

T

120 °C

C

50 Hz 356

60 Hz 373

50 Hz 636

60 Hz 580

Range 100 to 1200 V

25 A

40 A

-65 to +175 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE
NUMBER

VS-25F(R)

, MAXIMUM

V

RRM

VOLTAGE

CODE

10 100 150

20 200 275

40 400 500

60 600 725

80 800 950

100 1000 1200

120 1200 1400

REPETITIVE PEAK

REVERSE VOLTAGE

V

V

, MAXIMUM

RSM

NON-REPETITIVE

PEAK VOLTAGE

V

I

MAXIMUM

RRM

AT T

A

A2s

= 175 °C

J

mA

12

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VS-25F(R) Series

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FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current 
at case temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 6360 A2s

Low level value of threshold voltage V

High level value of threshold voltage V
Low level value of forward 

slope resistance
High level value of forward 

slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

r

180° conduction, half sine wave

t = 10 ms

t = 8.3 ms 373

t = 10 ms

t = 8.3 ms 314

t = 10 ms

t = 8.3 ms 580

t = 10 ms

t = 8.3 ms 410

(16.7 % x  x I
(I >  x I

(16.7 % x  x I

f1

(I >  x I

f2

Ipk = 78 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.30 V

FM

No voltage
reapplied

100 % V
reapplied

No voltage



RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V
reapplied

F(AV)

), TJ = TJ maximum 0.90

F(AV)

F(AV)

), TJ = TJ maximum 5.70

F(AV)



RRM

< I <  x I

< I <  x I

), TJ = TJ maximum 0.80

F(AV)

), TJ = TJ maximum 6.80

F(AV)

Vishay Semiconductors

25 A

120 °C

40 A

356

300

636

450

A

A

V

m

2

s

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
temperature range

Maximum storage temperature
range

Maximum thermal resistance,
junction to case

Maximum thermal resistance, 
case to heat sink

Allowable mounting torque

Approximate weight

Case style See dimensions - link at the end of datasheet DO-4 (DO-203AA)

R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.28 0.24

120° 0.39 0.41

90° 0.50 0.54

60° 0.73 0.75

30° 1.20 1.21

Note

• The table above shows the increment of thermal resistance R

T

J

T

Stg

R

thJC

R

thCS

DC operation 1.5

Mounting surface, smooth, flat and greased 0.5

Not lubricated threads

Lubricated threads

-65 to +175

-65 to +200

1.5 + 0 - 10 %
(13)

1.2 + 0 - 10 %
(10)

(lbf · in)

(lbf · in)

7g

0.25 oz.

T

= TJ maximum K/W

J

when devices operate at different conduction angles than DC

thJC

°C

K/W

N · m

N · m

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0255075100

Maximum Allowable Ambient Temperature (°C)

1

0

K

/

W

1

5

K

/

W

R

=

4

K

/

W

-

D

e

l

t

a

R

t

h

S

A

6

K

/

W

8

K

/

W

2

0

K

/

W

3

0

K

/

W

0

5

10

15

20

25

0 5 10 15 20 25 30

DC
180°
120°

90°
60°
30°

Average Forward Current (A)

RMS Limi t

Maximum Average Forward Power Loss (W)

Conduct ion Perio d

16F(R) Series
T = 175 °C

J

VS-25F(R) Series

Vishay Semiconductors

180

170

25F(R) Series
R (DC) = 1.5 K/W

thJC

160

150

Conduction Angl e

140

130

120

110

Maximum Al lowable Case Temperat ure (°C)

100

0 5 10 15 20 25 30

30°

90°

60°

Average Forward Current (A)

120°

180°

180

170

25F(R) Series
R (DC) = 1.5 K/W

thJC

160

150

Conducti on Period

140

130

120

110

Maximum All owab le Ca se Tempe ratu re (° C)

100

0 5 10 15 20 25 30 35 40 45

30°

60°

90°

120°

180°

Average Forward Current (A)

DC

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

35

30

25

20

180°
120°

90°
60°
30°

RMS Limi t

15

10

5

Maximum Average Forward Power Loss (W)

0

0 5 10 15 20 25 30

Con duct ion Angl e

25F(R) Seri es
T = 175°C

J

Average Forward Current (A)

3

K

/

W

4

K

/

W

6

K

/

W

8

K

/

W

1

2

K

/

W

2

0K

/

W

4

0

K

/

W

0 25 50 75 100 125 150 175

Maximum Allowable Ambient Temperature (°C)

R

2

t

h

K

S

/

W

A

=

1

K

/

W

­D

e

l

t

a

R

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Fig. 3 - Forward Power Loss Characteristics

Fig. 4 - Forward Power Loss Characteristics

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50

100

150

200

250

300

350

110100

Peak Half Sine Wave Forward Current (A)

Number Of Equal Amplit ude Half Cycle Curr ent Pulses (N)

Initial T = 175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

At Any Rated Load Conditi on And With
Rated V Applied Following Surge.

RRM

J

25F(R) Series

0.1

1

10

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

thJC

Transient Thermal Impedance Z (K/W)

25F(R) Series

Steady Stat e Value

R = 1.5 K/W

(DC Operation)

thJC

2 - Current rating: code = I

F(AV)

1 - Vishay Semiconductors product

3 - F = standard device

4 - None = stud normal polarity (cathode to stud)

R = stud reverse polarity (anode to stud)

5 - Voltage code x 10 = V

RRM

(see Voltage Ratings table)

6

- None = stud base DO-4 (DO-203AA) 10-32UNF-2A

M = stud base DO-4 (DO-203AA) M5 X 0.8

Device code

5 6

1

32 4

25VS- F R 120 M

1000

100

VS-25F(R) Series

Vishay Semiconductors

T = 25°C

J

T = 175°C

10

J

Fig. 5 - Maximum Non-Repetitive Surge Current

400

Maxi mum Non Rep etiti ve Surge Cur rent

350

300

250

200

150

100

50

Peak Half Sine Wave Forward Current (A)

25F(R) Series

0

0.01 0.1 1 10

Versus Pulse Train Duration.

Pulse Train Durati on (s)

Initial T = 175°C

No Voltage Reapplied

Rated V Reapplied

RRM

Fig. 6 - Maximum Non-Repetitive Surge Current

ORDERING INFORMATION TABLE

Instantaneous Forward Current (A)

1

0 0.5 1 1.5 2 2.5 3 3.5 4

Instantaneous Forward Voltage (V)

25F(R) Series

Fig. 7 - Forward Voltage Drop Characteristics

J

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

Dimensions www.vishay.com/doc?95311

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LINKS TO RELATED DOCUMENTS

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Document Number: 93506

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DIMENSIONS in millimeters (inches)

3.30 (0.13)

4.00 (0.16)

5.50 (0.22) MIN.

10.20 (0.40)
MAX.

11.50 (0.45)

10.70 (0.42)

10/32" UNF-2A

For metric devices: M5 x 0.8

0.8 ± 0.1

(0.03 ± 0.004)

R 0.40

R (0.02)

Ø 6.8 (0.27)

Ø 1.80 ± 0.20

(Ø 0.07 ± 0.01)

3.50 (0.14)

20.30 (0.80) MAX.

11 (0.43)

2

+ 0.3

0

(0.08 )

+ 0.01

0

Outline Dimensions

Vishay Semiconductors

DO-203AA (DO-4)

Document Number: 95311 For technical questions, contact: [e-mail]
Revision: 30-Jun-08 1

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