Datasheet 24702 (6) Datasheet

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP421

Office Equipment

Household Appliances

Solid State Relays

Switching Power Supplies

Various Controllers

Signal Transmission Between Different Voltage Circuits

The TOSHIBA TLP421 consists of a silicone photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kV

· Collector-emitter voltage: 80V (min.)

· Current transfer ratio: 50% (min.)

Rank GB: 100% (min.)

· Isolation voltage: 5000V

· UL recognized: UL1577

· BSI approved: BS EN60065: 1994

· SEMKO approved: EN60065, EN60950, EN60335

Approved no.9910249/01

RMS

(min)).

Approved no.8411 BS EN60950: 1992 Approved no.8412

rms

(min.)

Unit in mm

TOSHIBA 11−5B2

Weight: 0.26 g

Pin Configurations

(top view)

1

2

1 : Anode 2 : Cathode 3 : Emitter 4 : Collector

4

3

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· Option(D4)type TÜV approved: DIN VDE0884 Approved no.R9950202

Maximum operating insulation voltage: 890V Maximu permissible overvoltage: 8000VPK

(Note): When a VDE0884 approved type is needed,

please designate the “Option(D4)”

Making the VDE applocation: DIN VDE0884

· Construction mechanical rating

Creepage distance 7.0mm(min) 8.0mm(min)

Clearance 7.0mm(min) 8.0mm(min)

Insulation thickness 0.4mm(min) 0.4mm(min)

7.62mm Pich Typical Type

10.16mm Pich TLPxxxF Type

Current Transfer Ratio

PK

TLP421

Current Transfer Ratio (%)

IF = 5mA, VCE = 5V, Ta = 25°C

(I

/ IF)

C

Min Max

Marking Of Classification

Type

TLP421

Classification

(*1)

(None) 50 600 Blank, Y, Y+, G, G+, B, B+, GB

Rank Y 50 150 Y, Y+

Rank GR 100 300 G, G+

Rank BL 200 600 B, B+

Rank GB 100 600 G, G+, B, B+, GB

(*1): Ex. rank GB: TLP421 (GB)

(Note): Application type name for certification test, please use standard product type name, i. e. TLP421 (GB): TLP421

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TLP421

Maximum Ratings

Forward current IF 60 mA

Forward current derating(Ta ≥ 39°C) ∆IF / °C -0.7 mA / °C

Pulse forward current (Note 2) IFP 1 A

Power dissipation PD 100 mW

LED

Power dissipation derating ∆PD / °C -1.0 mW / °C

Reverse voltage VR 5 V

Junction temperature Tj 125 °C

Collector-emitter voltage V

Emitter-collector voltage V

Collector current IC 50 mA

Power dissipation(single circuit) PC 150 mW

Detector

Power dissipation derating (Ta ≥ 25°C)(single circuit)

Junction temperature Tj 125 °C

Operating temperature range T

Storage temperature range T

Lead soldering temperature (10s) T

Total package power dissipation PT 250 mW

Total package power dissipation derating (Ta ≥ 25°C)

Isolation voltage (Note 3) BVS 5000

(Ta = 25°C)

Characteristic Stmbol Rating Unit

80 V

CEO

7 V

ECO

∆P

/ °C -1.5 mW / °C

C

-55~100 °C

opr

-55~125 °C

stg

260 °C

sol

∆P

/ °C -2.5 mW / °C

T

V

rms

(Note 2): 100µs pulse, 100Hz frequency

(Note 3): AC, 1 min., R.H.≤ 60%. Apply voltage to LED pin and detector pin together.

Recommended Operating Conditions

Characteristic Symbol Min Typ. Max Unit

Supply voltage VCC ― 5 24 V

Forward current IF ― 16 25 mA

Collector current IC ― 1 10 mA

Operating temperature T

-25 ― 85 °C

opr

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TLP421

Individual Electrical Characteristics

Characteristic Symbol Test Condition Min Typ. Max Unit

Forward voltage VF IF = 10 mA 1.0 1.2 1.3 V

Reverse current IR VR = 5 V ― ― 10 µA

LED

Capacitance CT V = 0, f = 1 MHz ― 30 ― pF

Collector-emitter breakdown voltage

Emitter-collector breakdown voltage

Detector

Collector dark current ID(I

Capacitance (collector to emitter)

V

(BR) CEOIC

V

(BR) ECOIE

C

(Ta = 25°C)

= 0.5 mA 80 ― ― V

= 0.1 mA 7 ― ― V

VCE = 24 V (ambient light below 1000 ℓx)

)

CEO

V = 0, f = 1 MHz ― 10 ― pF

CE

= 24 V (ambient light

V

CE

Ta = 85°C below 1000 ℓx)

―

0.01 (0.1)

0.6 (1)

0.1

(10)

50

(50)

Coupled Electrical Characteristics

Characteristic Symbol Test Condition MIn Typ. Max Unit

Current transfer ratio IC / I

Saturated CTR IC / I

Collector-emitter saturation voltage

V

CE (sat)

F

F (sat)

(Ta = 25°C)

IF = 5 mA, VCE = 5 V

IF = 1 mA, VCE = 0.4 V

IC = 2.4 mA, IF = 8 mA ― ― 0.4

IC = 0.2 mA, IF = 1 mA

Rank GB

50 ― 600

100 ― 600

― 60 ―

30 ― ―

― 0.2 ―

― ― 0.4

Isolation Characteristics

(Ta = 25°C)

µA

%

V

Characteristic Symbol Test Condition Min Typ. Max Unit

Capacitance (input to output)

Isolation resistance R

Isolation voltage BV

C

VS = 0, f = 1 MHz ― 0.8 ― pF

S

VS = 500 V 1×10

S

AC, 1 minute 5000 ― ―

AC, 1 second, in oil ― 10000 ―

S

DC, 1 minute, in oil ― 10000 ― Vdc

12 1014

― Ω

V

rms

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TLP421

Switching Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Rise time t

Fall time t

Turn-on time t

Turn-off time t

Turn-on time t

Storage time t

Turn-off time t

(Ta = 25°C)

IF

RL

r

f

on

off

ON

s

OFF

V

VCC = 10 V, IC = 2 mA R

= 100Ω

L

RL = 1.9 kΩ (Fig.1) V

= 5 V, IF = 16 mA

CC

I

F

CC

CE

V

CE

t

ON

― 2 ―

― 3 ―

― 2 ―

― 25 ―

― 50 ―

t

OFF

VCC

4.5V

0.5V

µs

Fig.1 Switching time test circuit

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TLP421

–

100

IF – Ta

200

PC – Ta

80

60

(mA)

F

I

40

Allowable forward current

20

0

20 40 0 -20

80 60

100

120

Ambient temperature Ta (℃)

IFP – DR

3000

1000

(mA)

FP

Allowable collector power

(mA)

F

(mW)

C

dissipation P

160

120

80

40

100

10

0

20 40 0 -20

80 60

100

120

Ambient temperature Ta (℃)

IF – VF

100

1

Forward current I

Pulse forward current I

10

0.001

0.01

0.1

1

Duty cycle ratio DR

-3.0

-2.6

-2.2

/ ∆Ta ( mV / ℃)

F

-1.8

-1.4

Forword voltage temperature

coefficent ∆V

-1.0

-0.6

0.1

1

Forward current I

∆VF / ∆Ta

I

F

10

(mA)

100

0.1

0.4

0.6

Forward voltage V

0.8 1.0

1.2

F

(V)

1.4

1.6

IFP – VFP

1000

Pulse width ≤ 10µs

Repetitive

frequency=100Hz

Ta = 2 5℃

(mA)

100

FP

10

Pulse forward current I

1

0

0.4 0.8 1.2 1.6 2.0 2.4

Pulse forward voltage V

FP

(V)

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TLP421

A

10

ID – Ta

80

IC – VCE

(µA)

C

0.001

Collector dark current I

0.0001

(mA)

C

Collector current I

0.1

001

10

30

20

1

VCE=24 V

10

20 0

40

60

5

80

100

Ambient temperature Ta(℃)

IC – VCE

30

50

40

20

10

5

IF= 2 mA

60

(mA)

C

50

40

20

Collector current I

0

0 2

100

10

(mA)

C

1

20 15

30

4 6

Collector-emitter voltage V

IC – IF

Sample

Sample B

10

IF=5mA

CE

10 8

(V)

0

Collector-emitter voltage V

CE

1.0 0.8 0.4 0.6 0.2

1.2

(V)

Collector current I

0.1

IC /IF – IF

1000

(%)

F

/ I

C

100

Sample A

Sample B

0.01

0.1

1 10 100

Forward current I

Ta = 25°C

10

Current transfer ratio I

3

0.1

1 10 100

Forward current I

VCE = 5V

VCE = 0.4V

(mA)

F

Ta = 25°C VCE = 5V

VCE = 0.4V

(mA)

F

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TLP421

O

(mA)

C

Collector current I

100

10

0.1

VCE = 5V

IC – Ta

25

10

5

1

IF = 0.5 mA

20

Ambient temperature Ta (℃)

60

40 0 -20

80

100

Collector-emitter saturation

0.20

0.16

(V)

0.12

CE(sat)

0.08

voltage V

0.04

0

-20

0

V

20

CE(sat)

40

– Ta

IF = 5 mA

IC = 1 mA

60

Ambient temperature Ta (℃)

80

100

1000

100

Ta = 25°C

= 16mA

I

F

= 5V

V

CC

Switching Time – RL

t

FF

t

S

Switching time (µs)

10

t

ON

1

Load resistance R

10

L

(kΩ)

100

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TLP421

RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage.

· The products described in this document are subject to the foreign exchange and foreign trade laws.

000707EBC

· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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