Datasheet 2sk3020, 22sk3020 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

DC/DC Converter Applications

Ordering number:ENN6229

2SK3020

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· 4V drive.

Package Dimensions

unit:mm

2083B

[2SK3020]

6.5

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

0.8

2.3

1.5

7.0

5.5

1.6

1.2

7.5

0.5

unit:mm

2092B

6.5

5.0

[2SK3020]

1.55.5

2.3

0.5

0.5

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP

7.0

0.85

1243

0.6

2.3 2.3

0.8

0.5

2.5

1.2

0 to 0.2

31000TS (KOTO) TA-2106 No.6229–1/4

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA

2SK3020

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

SSD
SSG

D

PW≤10µs, duty cycle≤1%

PD

D

Tc=25˚C

I

V,Am1=

SSD)RB(

D

V

SSD
SSG

R
R

r

f

DS

)ffo(SG

1IDV,A7=

)no(SD

2IDV,A4=

)no(SD

)no(d

)ffo(d

SD

V

SG

V

SD

SD
SD
SD

I

S

0=03V

SG

V,V03=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A01=0141S

D

V01=5223mΩ

SG

V4=8476mΩ

SG

zHM1=f,V01=046Fp
zHM1=f,V01=083Fp
zHM1=f,V01=081Fp

tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS082sn
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS09sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

V,A51=

SG

D

0=9.021V

03V
42±V
51A
54A

0.1W
02W

sgnitaR

nimpytxam

A51=12Cn
A51=5Cn
A51=5Cn

˚C
˚C

tinU

Switching Time Test Circuit

VDD=15V

10V

0V

P.G

V

IN

PW=10µs
D.C.≤1%

V

IN

G

50Ω

10

A

ID=
RL=1.5Ω

D

V

OUT

2SK3020

S

No.6229–2/4

ID-

V

DS

3.5V

–A

D

9

8.0V

8

7

6

5

4

3

6.0V

4.0V

10.0V

Drain Current, I

2

1

0

0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Drain-to-Source Voltage, VDS–V

y

|

fs

|

-

I

10

fs | – S

y

1.0

3

VDS=10V

2

7
5

3
2

7
5

3
2

Tc=

D

25

-

75°C

Forward Transfer Admittance, |

0.1
23 57 23 57 23 2357

0.01 0.1 1.0 10

Drain Current, ID– A Gate-to-Source Voltage, VGS–V

R

20

DS(on)

I

D

I

D

020

100

90

80

–mΩ

70

60

DS(on)

50

40

30
20
10

Static Drain-to-Source

On-State Resistance, R

0

60 40 60 80 100 120 140

-

-40-

=4A, V

=7A, V

GS

GS

-

Tc

=4V

=10V

Case Temperature, Tc – ˚C

10000

1000

Ciss, Coss, Crss – pF

100

7
5

3
2

7
5

3
2

7
5

3
2

10

Ciss,Coss,Crss-V

1050 15202530 10 20 255150

Drain-to-Source Voltage, VDS–V

VGS=2.5V

°C

DS

2SK3020

3.0V

°C

25

f=1MHz

Ciss

Coss

Crss

10

–A

D

Drain Current, I

I

D

VDS=10V

9

8

7

6

5

4

3

2

1
0

0

0.5 1.0 2.0 2.51.5 3.0 3.5 4.0

GS

25

°C

Tc=75

-

V

Gate-to-Source Voltage, VGS–V

R

100

90

80

–mΩ

70

60

DS(on)

Static Drain-to-Source

On-State Resistance, R

–A

F

1.0

0.1

Forward Current, I

0.01

4A

50

40

30

20

10

0

20 4 6 8 10 12 14 16 181 3 5 7 9 11 13 15 17 19 20

2

VGS=0

10

7
5

3
2

7
5

3
2

7
5

3
2

0 0.20.1 0.3 0.4 0.5 0.7 0.80.6 0.9 1.0

DS(on)

ID=7A

IF-

75°C

-

V

GS

V

SD

°C

25

25°C

-

Tc=

Diode Forward Voltage, VSD–V

-

Qg

V

GS –

Gate-to-Source Voltage, V

10

VDS=10V
ID=15A

9

8

7

6

5

4

3

2

1
0

V

GS

Total Gate Charge, Qg – nC

°C

25°C

-

Tc=25°C

No.6229–3/4

5

VDD=15V
VGS=10V

3

2

100

7
5

3

2

Switching Time, SW Time – ns

10

723572 2357

SW Time

-

I

D

t

(off)

d

t

f

t

r

1.00.1 10

Drain Current, ID–A

-

1.2

P

D

Ta

2SK3020

–A
,I

100

7

IDP=45A

5
3

ID=15A

2

10

7
5

3

D

2

1.0
7
5

3

Operation in this area

2

Drain Current

0.01

is limited by RDS(on).

0.1
7
5

3

Tc=25°C

2

Single pulse

25

A S O

10ms

DC operation

23 5 57235723 57 23

0.1 1.0 100.01

Drain-to-Source Voltage, VDS–V

P

-

D

Tc

100µs10µs

1ms

1.0

–W

D

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0

No heat sink

20 6040 80 120100 140 1600

Ambient Temperature, Ta – ˚C

–W

20

D

15

10

5

Allowable Power Dissipation, P

0

20 6040 80 120100 140 1600

Case Temperature, Tc – ˚C

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6229–4/4