Datasheet 2sk2976, 22sk2976 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

DC-DC Converter Applications

Ordering number:ENN6003

2SK2976

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· 4V drive.

Package Dimensions

unit:mm

2083B

[2SK2976]

6.5

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

0.8

2.3

1.5

5.5

1.6

0.5

7.0

1.2

7.5

0.5

2092B

[2SK2976]

6.5

5.0

1.55.5

2.3

0.5

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP

7.0

0.85

1243

0.6

2.3 2.3

0.8

0.5

2.5

1.2

0 to 0.2

31000TS (KOTO) TA-2139 No.6003–1/4

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA

2SK2976

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 5Cn

egrahC"relliM"niarD-ot-etaGdgQ 6Cn

egatloVdrawroFedoiDV

SSD
SSG

D

PW≤10µs, duty cycle≤1%

PD

D

Tc=25˚C

I

V,Am1=

SSD)RB(

D

V

SSD
SSG

R
R

r

f

DS

)ffo(SG

1IDV,A7=

)no(SD

2IDV,A4=

)no(SD

)no(d

)ffo(d

SD

V

SG

V

SD

SD
SD
SD

V

SD

I

S

0=03V

SG

V,V03=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A7=821S

D

V01=8263mΩ

SG

V4=2485mΩ

SG

zHM1=f,V01=007Fp
zHM1=f,V01=083Fp
zHM1=f,V01=081Fp

tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS082sn
tiucriCtseTdeificepseeS08sn
tiucriCtseTdeificepseeS08sn

V,V01=

V,A7=

SG

I,V01=

SG

D

0=58.02.1V

03V
02±V
51A
54A
1W
02W

˚C
˚C

sgnitaR

nimpytxam

22Cn

A7=

tinU

Switching Time Test Circuit

V

IN

10V

0V

V

IN

PW=10µs
D.C.≤1%

G

P.G

50Ω

VDD=15V

D

S

ID=7A
RL=2.1Ω

V

OUT

No.6003–2/4

4.0V

ID-

3.5V

8

7

6

8.0V

6.0V

10V

3.0V

V

DS

–A

5

D

4

3

Drain Current, I

2

1

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Drain-to-Source Voltage, VDS–V

y

|

fs

|

-

I

100

7
5

3

fs|–S

2

y

10

7
5

3
2

1.0
7
5

3
2

Forward Transfer Admittance, |

0.1

23 57 23 57 23 57 23 57

0.01 0.1 1.0 10 100

Tc=

D

°C

25

-

75

°C

25

°C

Drain Current, ID–A

R

100

90
80

–mΩ

70

DS(on)

60
50
40
30
20

Static Drain-to-Source

On-State Resistance, R

10

0

-60 -40 -20 0 20 40 60 80 100 120 160140

DS

I

D

I

D

(on)

=4A,V

=7A,V

-

Tc

=4V

GS

=10V

GS

Case Temperature, Tc – ˚C

10000

1000

Ciss, Coss, Crss – pF

100

Ciss, Coss, Crss

7
5

3
2

7
5

3
2

7
5

3
2

10

1050 15202530

-

V

DS

Drain-to-Source Voltage, VDS–V

2.5V

VGS=2.0V

VDS=10V

f=1MHz

Ciss

Coss

Crss

2SK2976

Static Drain-to-Source

10

VDS=10V

9
8
7

–A

D

6
5
4
3

Drain Current, I

2
1
0

0 0.5 1.0 1.5 2.0 2.5 3.0

ID-

V

GS

°C

Tc=75

°C

25

Gate-to-Source Voltage, VGS–V

-

V

°C

Tc=75

SD

V

GS

Tc=25

–V

GS

°C

°C

25

25

-

(on)

R

100

–mΩ

DS(on)

On-State Resistance, R

90
80
70
60
50
40
30
20
10

0

ID=7A

ID=4A

20

DS

4 6 8 10 12 14 16 18 20

Gate-to-Source Voltage, V

10

VGS=0

7
5

3
2

–A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01
0 0.1 0.2 0.3 0.50.4 0.6 1.00.7 0.8 0.9

IF-

Diode Forward Voltage, VSD–V

10

9

–V

8

GS

7
6
5
4
3
2

Gate-to-Source Voltage, V

1
0

VDS=10V
I

=7A

D

VGS-

5 101520250

Qg

Total Gate Charge, Qg – nC

25°C

-

°C

No.6003–3/4

2SK2976

1000

7
5

3
2

100

7
5

3
2

Switching Time, SW Time – ns

10

7

72 2357 2357 235723 57 23 5

SW Time

Drain Current, ID–A

1.2

–W

1.0

D

0.8

0.6

PD-

-

t

d(off)

t

f

r

t

t

d(on)

Ta

No heat sink

I

D

VDD=15V
V

=10V

GS

101.00.1

100

7

IDP=45A

5
3
2

10

–A

7
5

D

3

,I

2

Operation in this area

1.0

is limited by R

7
5

3

Drain Current

2

0.1
7

Tc=25°C

5

Single pulse

3

ID=15A

(on).

DS

A S O

DC operation

10ms

101.0

10

100

µ

s

1ms

Drain-to-Source Voltage, VDS–V

24

–W

20

D

16

12

PD-

Tc

µ

s

0.4

0.2

Allowable Power Dissipation, P

0

40200

60

100

80

120 140 160

Ambient Temperature, Ta – ˚C

8

4

Allowable Power Dissipation, P

0

40200

80

60

Case Temperature, Tc – ˚C

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

100

120 140 160

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6003–4/4