Datasheet 2sk2791, 22sk2791 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6437

2SK2791

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Package Dimensions

unit:mm

2083B

[2SK2791]

0.85

6.5

5.0

4

0.7

0.6

1

23

2.3

1.5

5.5

0.8

1.6

2.3

2.3

7.0

1.2

7.5

0.5

2092B

[2SK2791]

6.5

5.0

1.55.5

2.3

0.5

0.5

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP

7.0

0.85

1243

0.6

2.3 2.3

0.8

0.5

2.5

1.2

0 to 0.2

31000TS (KOTO) TA-2493 No.6437–1/4

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA

2SK2791

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egatloVdrawroFedoiDV

SSD
SSG

D

SG

R

SD

R

SD

WP ≤ elcycytud,sµ01 ≤ %161A

PD

D

Tc=25˚C

I

V,Am1=

0=06V

SG

V,V06=

0=001Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1=0.15.2V

D

A2=35S

D

A2=011541mΩ

D

A2=041591mΩ

D

zHM1=f,V02=073Fp
zHM1=f,V02=021Fp
zHM1=f,V02=02Fp

tiucriCtseTdeificepseeS31sn
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS001sn
tiucriCtseTdeificepseeS06sn

V,A4=

0=9.02.1V

SG

SSD
SSG

)ffo(VSDI,V01=

1)no(VSGI,A01=

2)no(VSGI,A4=

)no(d

r

)ffo(d

f

DS

SSD)RB(

D

V

SD

V

SG

SD
SD
SD

I

S

sgnitaR

nimpytxam

06V
02±V
4A

1W
02W

˚C
˚C

tinU

Switching Time Test Circuit

V

IN

10V

0V

V

IN

PW=10µs
D.C.≤1%

P.G

G

50Ω

VDD=30V

D

S

ID=2A
RL=15Ω

2SK2791

V

OUT

No.6437–2/4

4.0

3.5

3.0

–A

2.5

D

2.0

6.0V

8.0V

10.0V

4.0V

I

D

5.0V

-- V

DS

3.0V

2SK2791

8

7

6

–A

5

D

4

VDS=10V

I

D

-- V

GS

1.5

Drain Current, I

1.0

VGS=2.5V

0.5

0

0 0.40.2 0.6 1.00.8 1.2 1.61.4

0.30

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

GS

IT01143

Tc=25°C
ID=2A

0.25

– Ω

0.20

(on)

DS

0.15

0.10

0.05

Static Drain-to-Source

On-State Resistance, R

0

010468 14212161820

10

VDS=10V

7
5

fs|–S

y

3
2

1.0
7

5

3
2

Gate-to-Source Voltage, V

y

fs -- I



°C

Tc=--25

75°C

–V

GS

IT01145

D

°C

25

Forward Transfer Admittance, |

0.1

0.01 101.00.1

1000

7
5

3
2

100

7
5

3
2

10

7

5

Switching Time, SW Time – ns

3
2

1.0

0.1

35723572357

2

Drain Current, ID–A

SW Time -- I

D

VDD=30V
VGS=10V

t

(off)

d

t

f

t

r

23 57 23 57

Drain Current, ID–A

1.0 10

IT01147

td(on)

IT01149

3

Drain Current, I

2

1

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

0.30

0.25

– Ω

0.20

(on)

DS

0.15

0.10

0.05

Static Drain-to-Source

On-State Resistance, R

0

--60 40--40 --20 12020 60 80 100 1601400

10

VGS=0

7
5

3
2

–A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01

Gate-to-Source Voltage, VGS–V

RDS(on) -- Tc

=2A, V

I

D

=2A, V

I

D

Case Temperature, Tc – ˚C

I

-- V

F

Tc=75°C

0.20 0.4 0.6 0.8 1.21.0

°C

Tc=75

=4V

GS

=10V

GS

SD

°C

25°C

--25

Diode Forward Voltage, VSD–V

1000

7
5

3
2

100

7
5

Ciss, Coss, Crss – pF

3
2

10

0 5 10 15 20 25 30

Ciss, Coss, Crss -- V

Ciss

Coss

Crss

Drain-to-Source Voltage, VDS–V

--25°C

25°C

IT01144

IT01146

IT01148

DS

f=1MHz

IT01150

No.6437–3/4

2SK2791

100

7
5

3

IDP=16A

2

10

7

ID=4A

5

–A

3

D

2

,I

1.0
7
5

3
2

Drain Current

0.1
7
5

3

Tc=25°C

2

Single pulse

0.01
23 57

0.01

30

25

–W

D

20

15

A S O

DC operation(Ta=25

Operation in this
area is limited by RDS(on).

23 57 23 57

0.1

Drain-to-Source Voltage, VDS–V

P

D

(Tc=25°C)

1.0

-- Tc

100µs

1ms

10m

DC operation

s

°C)

23 57

10 100

10µs

IT01151

P

-- Ta

1.2

–W

1.0

D

0.8

0.6

0.4

0.2

D

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C

IT01152

10

5

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Case Temperature, Tc – ˚C

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

IT01153

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6437–4/4