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2SK2316
Ordering number : EN5300A
Ultrahigh-Speed Switching Applications
N-Channel Silicon MOSFET
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) TA-0121 No.5300-1/4
Package Dimensions
unit: mm
2062A-PCP
[2SK2316]
SANYO: PCP
(Bottom View)
1 : Gate
2 : Drain
3 : Source
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
20 V
Gate-to-Source Voltage V
GSS
±10 V
Drain Current (DC) I
D
2A
Drain Current (Pulse) I
DP
PW≤10µd, duty cycle≤1% 8 A
Allowable Power Dissipation P
D
Mounted on ceramic board 1.5 W
(250mm
2
×0.8mm)
Tc=25°C 3.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
min typ max
Unit
D-S Breakdown Voltage V
(BR)DSS
ID=1mA, VGS=0 20 V
G-S Breakdown Voltage V
(BR)GSS
IG=±100µA, VDS=0 ±10 V
Zero-Gate Voltage I
DSS
VDS=16V, VGS=0 100 µA
Drain Current
Gate-to-Source Leakage Current I
GSS
VGS=±8V, VDS=0 ±10 µA
Cutoff Voltage V
GS(off)
VDS=10V, ID=1mA 0.5 1.5 V
Forward Transfer Admittance
yfs VDS=10V, ID=1A 1.8 2.8 S
Static Drain-to-Source R
DS(on)
ID=1A, VGS=4V 140 200 mΩ
ON-State Resistance R
DS(on)
ID=1A, VGS=2.5V 200 320 mΩ
Input Capacitance Ciss VDS=10V, f=1MHz 170 pF
Output Capacitance Coss VDS=10V, f=1MHz 145 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 50 pF
Continued on next page.
Features
• Low ON resistance.
• Ultrahigh-speed switching.
• Low-voltage drive (2.5V drive).
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Continued from preceding page.
Parameter Symbol Conditions
Ratings
min typ max
Unit
Turn-ON Delay Time t
d(on)
See specified Test Circuit. 15 ns
Rise Time t
r
″ 20 ns
Turn-OFF Delay Time t
d(off)
″ 50 ns
Fall Time t
f
″ 35 ns
Diode Forward Voltage V
SD
IS=2A, VGS=0 1.0 V
Making : KP
Switching Time Test Circuit
2SK2316
No.5300-2/4
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2SK2316
No.5300-3/4
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2SK2316
No.5300-4/4
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property lose.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of January, 1997. Specifications and information herein are subject
to change without notice.
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