Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
High-Frequency
General-Purpose Amplifier Applications
Ordering number:ENN2746A
2SK1065
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Ultrasmall package facilitates miniaturization in end
products.
· Small Crss (Crss=0.04pF typ).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVniarD-ot-etaGV
tnerruCetaGI
tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
ODG
G
D
D
Package Dimensions
unit:mm
2057A
[2SK1065]
0.3
0.425
2.1
1.250
0.425
3
12
0.65
0.65
2.0
0.15
0.3 0.6
0.9
0.2
0 to 0.1
1 : Gate
2 : Drain
3 : Source
SANYO : MCP
02–V
01Am
02Am
051Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVffotuCV
ecnattimdArefsnarTdrawroF
* : The 2SK1065 is classified by I
I
knar345
SSD
I
SSD
0.3ot2.10.6ot5.20.21ot0.5
egatloVnwodkaerBniarD-ot-etaGV
tnerruCegakaeLecruoS-ot-etaGI
tnerruCniarDegatloVetaG-oreZI
as follows (unit : mA) : Continued on next page.
DSS
I
ODG)RB(
G
V
SSG
V
SSD
V
)ffo(SG
1|sfy|VSDV,V5=
2|sfy|VSDV,V5=
Aµ01–=02–V
V,V5.0–=
SG
SD
SD
0=01–An
SD
V,V5=
0=*2.1*0.21Am
SG
I,V5=
Aµ01=4.0–3.1–5.2–V
D
SG
SG
zHk1=f,0=4.20.6Sm
zHM001=f,0=4.20.6Sm
(Note) Marking : T
• For CP package version, use the 2SK242.
83100TS (KOTO)/51099TH (KT)/4298TA, TS No.2746–1/4
sgnitaR
nimpytxam
tinU
Page 2
Continued from preceding page.
retemaraPlobmySsnoitidnoCsgnitaRtinU
ecnaticapaCtupnIssiCVSDV,V5=
ecnaticapaCrefsnarTesreveRssrCVSDV,V5=
ecnaticapaCtuptuOssoCVSDV,V5=
niaGrewoPGP
erugiFesioNFNtiucriCtseTdeificepseeS5.30.6Bd
PG and NF Test Circuit
L1
50Ω
input
to 30pF
1000pF
to 30pF
to 30pF
L2
to 30pF
1000pF
2SK1065
V
SD
output
50Ω
SG
SG
SG
V,V5=
SG
zHM1=f,0=0.4Fp
zHM1=f,0=40.051.0Fp
zHM1=f,0=0.4Fp
,zHM001=f,0=
tiucriCtseTdeificepseeS
42Bd
V
L1 : 1mm φ plated wire, 10mm φ 4T 18mm pitch,
tapped at 1T from gate side
L2 : 1mm φ plated wire, 10mm φ 6T 10mm pitch,
tapped at 1T from gate side
G
ID -- V
GS
--0.3 --0.2 --0.1 0--0.4--0.5--0.6--0.8 --0.7
Gate-to-Source Voltage, VGS–V
ID -- V
GS
V
D
ID -- V
DS
VDS=5V
3
VGS=0
--0.1V
VDS=5V
–mA
D
Drain Current, I
2
1
0
7
12345678
Drain-to-Source Voltage, V
ID -- V
DS
DS
–V
--0.2V
--0.3V
--0.4V
ITR00943
VGS=0
--1.4 --1.2 --1.0 --0.2--0.8--1.6 --0.6 --0.4
Gate-to-Source Voltage, VGS–V
6
--0.2V
5
4
--0.4V
–mA
3
D
2
1
Drain Current, I
0
01234 6758
Drain-to-Source Voltage, V
DS
–V
--0.6V
--0.8V
ITR00944
No.2746–2/4
Page 3
–mA
DSS
12
10
8
6
VDS=5V
µ
ID=10
2SK1065
I
-- VGS(off)
DSS
2
A
10
fs|–mS
y
7
5
yfs
-- I
I
DSS
D
=1mA
3mA
VDS=5V
f=1kHz
7mA
4
Drain Current, I
2
0
Cutoff Voltage, VGS(off) – V
5
3
2
1.0
7
5
3
2
0.1
7
5
Reverse Transfer Capacitance, Crss – pF
3
2235
0.1
5
2
1.0
rs – mS
y
5
2
0.1
5
2
0.01
5
Reverse Transfer Admittance,
2
100
5
2
10
os–mS
y
5
2
1.0
5
Output Admittance,
2
Drain-to-Source Voltage, VDS–V
100 1000
VDS=5V
ID=3mA
Crss -- V
357
--b
rs
Frequency, f – MHz
--1.2 --2.4--0.8 --1.6--0.40 --2.0
DS
I
DSS
=7mA
3mA
1mA
1.0
-- f
y
rs
rs
b
rs
g
-- f
y
os
b
os
os
g
3
2
Forward Transfer Admittance, |
1.0
357
ITR00947
5
VGS=0
f=1MHz
72
10
ITR00949
VDS=5V
ID=3mA
723 2575
ITR00951
VDS=5V
3
ID=3mA
2
10
is – mS
7
y
5
3
2
1.0
Input Admittance,
7
5
3
100
10
7
5
fs – mS
y
3
2
1.0
7
5
3
Forward Transfer Admittance,
2
57
10
7
5
3
2
is – mS
y
1.0
7
5
3
Input Admittance,
2
100
1.0
Drain Current, ID–mA
-- f
y
is
b
is
g
is
2
34
56
Frequency, f – MHz
-- f
y
fs
--b
fs
g
fs
fs
--g
Frequency, f – MHz
-- I
y
is
D
b
is
g
is
72235
723 5
ITR00948
7
89
ITR00950
VDS=5V
ID=3mA
1000
ITR00952
f=100MHz
VDS=5V
10
1000
0.1
7
100
Frequency, f – MHz
723 55
ITR00953
1000
0.1
57
1.0
Drain Current, ID–mA
723 5
ITR00954
10
No.2746–3/4
Page 4
I
5
3
rs – µS
2
y
10
7
5
3
2
Reverse Transfer Admittance,
1.0
–mW
D
180
160
150
140
120
100
80
60
57
1.0
2SK1065
--
y
rs
D
f=100MHz
VDS=5V
--b
rs
g
rs
fs–mS
y
1.0
10
7
5
3
2
7
5
f=100MHz
VDS=5V
fs
--b
fs
g
Forward Transfer Admittance,
3
723 5
10
ITR00955
P
-- Ta
D
57
1.0
Drain Current, ID–mADrain Current, ID–mA
-- I
y
fs
D
723 5
10
ITR00956
40
20
Allowable Power Dissipation, P
0
00 20 40 60 80 100 120 140150 160
Ambient Temperature, Ta – °C
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
ITR00957
This catalog provides information as of August, 2000. Specifications and information herein are subject to
change without notice.
PS No.2746–4/4
Loading...