Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6097A
2SJ563
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
4.5
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Tc=25˚C
Package Dimensions
unit:mm
2062A
[2SJ563]
1.6
0.4
0.5
2
3
1.5
0.75
2
× )mm8.05.1W
mm052(draobcimarecanodetnuoM
1
3.0
1.5
2.5
4.25max
1.0
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
03–V
02±V
2–A
8–A
5.3W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
)ffo(SG
1IDV,A1–=
)no(SD
2I
)no(SD
I
SSD)RB(
D
V
V
V
D
V,Am1–=
0=03–V
SG
V,V03–=
SD
SG
SD
0=01–Aµ
SG
V,V61±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–5.2–V
D
A1–=2.17.1S
D
V01–=042513mΩ
SG
V,Am003–=
V4–=004055mΩ
SG
nimpytxam
Marking : JO Continued on next page.
71000TS (KOTO) TA-1696 No.6097–1/4
sgnitaR
tinU
Page 2
2SJ563
VDD=—15V
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
V,A2–=
S
Switching Time Test Circuit
V
IN
0V
—10V
PW=10µs
D.C.≤1%
V
IN
G
ID=—1A
RL=15Ω
D
V
OUT
zHM1=f,V01–=061Fp
zHM1=f,V01–=09Fp
zHM1=f,V01–=83Fp
tiucriCtseTdeificepseeS7sn
tiucriCtseTdeificepseeS7sn
tiucriCtseTdeificepseeS32sn
tiucriCtseTdeificepseeS51sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=0.1–5.1–V
SG
sgnitaR
nimpytxam
A2–=7Cn
D
A2–=1Cn
D
A2–=2.1Cn
D
tinU
P.G
-
2.0
-
1.8
-
1.6
-
1.4
–A
D
-
1.2
-
1.0
-
0.8
-
0.6
Drain Current, I
-
0.4
-
0.2
0
0
10
7
5
fs|–S
y
3
2
1.0
7
5
3
2
Forward Transfer Admittance, |
0.1
-
0.01
2SJ563
50Ω
-8.0V
ID-
-10.0V
S
V
-6.0V
DS
-4.0V
-3.5V
–A
D
-3.0V
Drain Current, I
VGS=-2.5V
-
0.1-0.2-0.3-0.4-0.5-0.6-0.7-0.8-0.9-1.0 0
Drain-to-Source Voltage, VDS–V
y
|
fs
|
-
I
D
Tc=-25°C
VDS=-10V
°C
25
1000
–mΩ
DS(on)
75°C
Static Drain-to-Source
On-State Resistance, R
23 57 23 57 23 57
-
0.1
-
1.0
Drain Current, ID–A
ID-
V
-
4.0
VDS=-10V
-
3.6
-
3.2
-
2.8
-
2.4
-
2.0
-
1.6
-
1.2
-
0.8
-
0.4
0
900
800
700
600
500
400
300
200
100
0
ID=-0.3A
-
1
Gate-to-Source Voltage, VGS–V
R
DS(on)
-
ID=-1.0A
-20-4-6-8-10-12-14-16-18-
GS
2
-
3
-
V
GS
Gate-to-Source Voltage, VGS–V
°C
Tc=-25
°C
75
-
4
Tc=25
25
°C
-
5
°C
20
No.6097–2/4
Page 3
R
800
700
600
–mΩ
500
DS(on)
400
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
-40-
60 40 60 80 100 120 160140
-
20
DS(on)
=-0.3A,V
I
D
=-1.0A,V
I
D
020
GS
GS
-
=-4V
=-10V
Case Temperature, Tc – ˚C
1000
7
5
3
2
100
7
5
Ciss,Coss,Crss-V
Ciss, Coss, Crss – pF
3
2
10
-
8
-
40
-
12-16-20-24
Drain-to-Source Voltage, VDS– V Total Gate Charge, Qg – nC
Tc
DS
f=1MHz
Ciss
Coss
Crss
-
28
2SJ563
-
-
32
-
10
-
1.0
–A
F
-
0.1
Forward Current, I
-
0.01
0.001
-10
V
–
GS
Gate-to-Source Voltage, V
-9
-8
-7
-6
-5
-4
-3
-2
-1
7
VGS=0
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
-
0
VDS=-10V
-
ID=
0
IF-
V
SD
25°C
75°C
0.2-0.4-0.6
Diode Forward Voltage, VSD–V
V
GS
-
0.8
-
Qg
2A
12345670
°C
Tc=-25
-
1.0
-
1.2-1.4
100
VDD=-15V
7
-
VGS=
5
3
2
10
7
5
3
Switching Time, SW Time – ns
2
1.0
7235723 57
-
0.1
1.6
1.5
1.4
–W
D
1.2
1.0
0.8
0.6
0.4
SW Time
10V
Drain Current, ID–A
P
Mounted on a ceramic board (250mm
t
d
td(on)
D
-
I
D
(off)
t
f
t
r
-
1.0
-
Ta PD-
2
×0.8mm)
2
IDP=-8A
-
10
7
5
3
2
–A
D
-
1.0
,I
7
5
3
2
-
0.1
Drain Current
7
5
3
2
Tc=25°C
Single pulse
-
0.01
-
0.1
4.0
3.5
–W
D
3.0
2.0
1.0
Operation in this area
is limited by RDS(on).
Drain-to-Source Voltage, VDS–V
A S O
ID=-2A
DC operation
23 5 5723 57 23
-
1.0
Tc
10ms
100ms
-
10
100µs
1ms
0.2
Allowable Power Dissipation, P
0
20 6040 80 120100 140 1600
Allowable Power Dissipation, P
0
20 6040 80 120100 140 1600
Ambient Temperature, Ta – ˚C Case Temperature, Tc – ˚C
No.6097–3/4
Page 4
2SJ563
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2000. Specifications and information herein are subject to
change without notice.
PS No.6097–4/4
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