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Power Transistors
2SC55192SC5519
2SC5519
2SC55192SC5519
Silicon NPN triple diffusion mesa type
For horizontal deflection output
■ Features
•
High breakdown voltage, and high reliability through the use of a
glass passivation layer
•
High-speed switching
•
Wide area of safe operation (ASO)
■ Absolute Maximum Ratings TC = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Base current I
Collector power
dissipation
TC = 25°CPC50 W
Ta = 25°C3
Junction temperature T
Storage temperature T
CBO
CES
EBO
CP
C
B
j
stg
1 700 V
1 700 V
7V
16 A
8A
3A
150 °C
−55 to +150 °C
15.5
±0.5
φ 3.2
(10.0)
±0.5
26.5
(1.2)
±0.5
18.6
(2.0)
(2.0)
Solder Dip
±0.3
3.3
15˚23
10.9
±0.5
(4.0)
2.0
1.1
5.45
(2.0)
Internal Connection
B
±0.1
(4.5)
±0.2
±0.1
±0.3
±0.3
5.5
E
Unit: mm
3.0
±0.3
5˚
5˚
(23.4)
5˚
5˚
5˚
0.7
±0.1
1 : Base
2 : Collector
3 : Emitter
TOP-3E Package
C
±0.5
22.0
■ Electrical Characteristics TC = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Emitter to base voltage V
Forward current transfer ratio h
Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Storage time t
Fall time t
Diode forward voltage V
V
CBO
EBO
FE
CE(sat)
BE(sat)
T
stg
f
F
VCB = 1 000 V, IE = 0 50 µA
VCB = 1 700 V, IE = 0 1 mA
IE = 500 mA, IC = 0 7 V
VCE = 5 V, IC = 6 A 5 9
IC = 6 A, IB = 1.2 A 5 V
IC = 6 A, IB = 1.2 A 1.5 V
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz
IC = 6 A, IB1 = 1.2 A, IB2 = −2.4 A 5.0 µs
0.5 µs
IF = 6 A −2V
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Page 2
2SC5519
Power Transistors
PC T
a
100
)
90
W
(
80
C
70
60
50
40
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(1)
(2)
(3)
Ambient temperature Ta (˚C
)
Area of safe operation, horizontal operation ASO
20
f=15.75kHz, TC<90˚C
Area of safe operation with
respect to the single pulse
)
15
A
(
C
10
5
Collector current I
0
0 2000500 15001000
Collector to emitter voltage VCE (V
overload curve at the time of
switching ON, shutting down
by the high voltage spark,
holding down and like that,
during horizontal operation.
<1mA
)
2
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