Page 1
Po wer Transistors
2SC5405
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
Features
■
●
High-speed switching
●
High forward current transfer ratio hFE which has satisfactory
linearity
●
Dielectric breakdown voltage of the package: > 5kV
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
V
V
I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
CEO
EBO
=25˚C)
C
Ratings
80
50
6
6
3
1
20
2.0
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Unit: mm
9.9±0.3
φ3.2±0.1
15.0±0.513.7±0.2
1.4±0.2
1
1.6±0.2
0.8±0.1
2.54±0.3
23
5.08±0.5
TO–220D Full Pack Package
4.2±0.2
4.6±0.2
2.9±0.2
3.0±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
hFE Rank classification
Rank P Q
h
800 to 1500 500 to 1000
FE
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
*
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
Conditions
VCB = 80V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
VCE = 12V, IC = 0.2A, f = 10MHz
IC = 1A, IB1 = 0.05A, IB2 = – 0.1A,
VCC = 50V
min
50
500
typ
0.5
75
0.3
3.5
0.9
max
100
100
100
1500
0.7
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SC5405
IC—V
CE
1.0
0.8
)
A
(
C
0.6
0.4
Collector current I
0.2
0
0108264
IB=0.9mA
0.8mA
0.7mA
TC=25˚C
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
Collector to emitter voltage VCE (V
hFE—I
C
10000
FE
1000
100
VCE=4V
=25˚C
T
C
)
A
(
C
Collector current I
)
IC—V
BE
6
5
4
3
2
1
0
0 1.21.00.80.2 0.60.4
VCE=4V
T
C
Base to emitter voltage VBE (V
=25˚C
V
)
100
V
(
CE(sat)
10
1
0.1
0.01
Collector to emitter saturation voltage V
0.01 0.1 1 10
)
CE(sat)—IC
Collector current IC (A
IC/IB=40
=25˚C
T
C
)
10
Forward current transfer ratio h
1
0.01 0.1 1 10 100
Collector current IC (A
)
2
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