Datasheet 2SC5127, 2SC5127A, 22sc5127 Datasheet

Po wer Transistors

2SC5127, 2SC5127A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Wide area of safe operation (ASO)

●

Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature

2SC5127 2SC5127A 2SC5127 2SC5127A

TC=25°C Ta=25°C

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

=25˚C)

C

Ratings

800 900 800 900 500

8

3.0

1.5

0.5 25

2

150

–55 to +150

Unit

V

V V A A A

W

˚C ˚C

φ3.2±0.1

15.0±0.313.7

–0.2

+0.5

4.1±0.2

8.0±0.2

Solder Dip

7°

9.9±0.3

3.0±0.2

1.2±0.15

1.45±0.15

0.75±0.1

2.54±0.2

5.08±0.4

231

TO–220E Full Pack Package

Unit: mm

4.6±0.2

2.9±0.2

2.6±0.1

0.7±0.1

1:Base 2:Collector 3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff current

2SC5127

2SC5127A Emitter cutoff current Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Conditions

VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.6A IC = 0.6A, IB = 0.17A IC = 0.6A, IB = 0.17A VCE = 10V, IC = 0.1A, f = 1MHz

IC = 0.6A, IB1 = 0.17A, IB2 = – 0.34A, VCC = 200V

min

500

15

8

typ20max

100 100 100

1.0

1.5

1.0

3.0

0.3

Unit

µA

V

V V

MHz

µs µs µs

1

Po wer Transistors 2SC5127/2SC5127A

PC—Ta IC—V

40

) W

(

C

30

(1)

20

(2)

10

(3)

Collector power dissipation P

(4)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

) V

(

30

BE(sat)

10

3

1

100˚C

0.3

Base to emitter saturation voltage V

0.1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

=Ta

(1) T

C

(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

V

BE(sat)—IC

IC/IB=5

TC=–25˚C

25˚C

)

CE

1.2

1.0

) A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

1000

FE

300

100

30

25˚C

10

3

Forward current transfer ratio h

TC=100˚C

–25˚C

TC=25˚C

IB=150mA

100mA

80mA

60mA

40mA

20mA

10mA

C

VCE=5V

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

) pF

(

300

ob

100

30

10

V

CE(sat)—IC

3

1

25˚C

TC=100˚C

–25˚C

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

Cob—V

3

CB

IE=0 f=1MHz T

IC/IB=5

)

=25˚C

C

Collector output capacitance C

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

)

1

1 3 10 30 100

Collector to base voltage VCB (V

)

fT—I

100

)

30

MHz

(

T

10

3

1

0.3

Transition frequency f

0.1

0.01 0.03 0.1 0.3 1

Collector current IC (A

2

ton, t

C

VCE=10V f=1MHz

=25˚C

T

C

100

30

) µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

, tf — I

stg

t

C

Pulsed tw=1ms Duty cycle=1%

=3.5

I

C/IB

=–IB2)

(2I

B1

V

=200V

CC

=25˚C

T

C

stg

t

f

t

on

Switching time t

0.03

0.01 0 2.00.5 1.51.0

)

Collector current IC (A

)

Area of safe operation (ASO)

10

3

)

1

A

(

C

0.3

0.1

0.03

0.01

Collector current I

0.003

0.001 1 10 100 10003 30 300

Collector to emitter voltage VCE (V

Non repetitive pulse T

=25˚C

C

10ms

DC

t=0.5ms

1ms

)

Po wer Transistors 2SC5127/2SC5127A

Area of safe operation, reverse bias ASO

4.0

3.5

)

3.0

A

(

C

2.5

2.0

1.5

1.0

Collector current I

0.5

0

0 800200 600400 700100 500300

Collector to emitter voltage VCE (V

10000

)

1000

˚C/W

( (t)

th

100

L

=180µH

coil

I

C/IB

(I

=–IB2)

B1

<100˚C

T

C

Note: Rth was measured at Ta=25˚C and under natural convection.

=10V × 0.2A (2W) and without heat sink

(1) P

T

=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink

(2) P

T

Reverse bias ASO measuring circuit

=5

T.U.T

I

B1

V

in

t

W

–I

B2

C

)

R

—t

th(t)

(1)

L coil

V

CC

clamp

10

1

Thermal resistance R

0.1

–4

10

–3

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10

3