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Bulletin I2403 rev. A 07/00
22RIA SERIES
MEDIUM POWER THYRISTORS Stud Version
Features
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1600V V
DRM
/ V
RRM
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
22A
Major Ratings and Characteristics
Parameters Units
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
I2t@
V
DRM/VRRM
t
q
T
J
@ 50Hz 400 340 A
@ 60Hz 420 355 A
50Hz 793 575 A2s
@ 60Hz 724 525 A2s
typical 110 µs
10 to 120 140 to 160
100 to 1200 1400 to 1600 V
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22RIA
22 22 A
85 85 °C
35 35 A
- 65 to 125 °C
Case Style
TO-208AA (TO-48)
1
Page 2
22RIA Series
Bulletin I2403 rev. A 07/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage (1) repetitive peak voltage (2) @ T
10 100 150 20
20 200 300
40 400 500
60 600 700
22RIA 8 0 800 900 10
100 1000 1100
120 1200 1300
140 1400 1500
160 1600 1700
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2) For voltage pulses with t
≤ 5ms
p
On-state Conduction
Parameter Units Conditions
I
Max. average on-state current 22 22 A 180 ° sinusoidal conduction
T(AV)
@ Case temperature 85 85 °C
I
Max. RMS on-state current 3 5 35 A
T(RMS)
I
Max. peak, one-cycle 400 340 A t = 10ms No voltage
TSM
non-repetitive surge current 420 355 t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 793 575 A2s t = 10ms No voltage Initial TJ = TJ max.
2
I
√t Maximum I2√t for fusing 7930 5750 A2√s t = 0.1 to 10ms, no voltage reapplied, T
V
Low level value of threshold 0.83 1.01 V (16.7% x π x I
T(TO)1
voltage
High level value of threshold 0.95 1.17 (I > π x I
V
T(TO)
2
voltage
Low level value of on-state 14.9 12.24 mΩ (16.7% x π x I
r
t1
slope resistance
r
High level value of on-state 13.4 10.35 (I > π x I
t2
slope resistance
Max. on-state voltage 1.70 --- V Ipk= 70 A, TJ = 25°C
V
TM
I
Maximum holding current 130 mA TJ = 25°C. Anode supply 6V, resistive load,
H
Latching current 200
I
L
, max. repetitive V
VVmA
, maximum non- I
RSM
DRM/IRRM
= TJ max.
J
22RIA
10 to 120 140 to 160
335 285 t = 10ms 100% V
355 300 t = 8.3ms reapplied Sinusoidal half wave,
724 525 t = 8.3ms reapplied
560 405 t = 10ms 100% V
515 370 t = 8.3ms rea pplied
T(AV)
T(AV)
--- 1.80
RRM
RRM
< I < π x I
T(AV)
), TJ = TJ max.
< I < π x I
T(AV)
), TJ = TJ max.
), TJ = TJ max.
T(AV)
), TJ = TJ max.
T(AV)
= TJ max.
J
max.
2
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Page 3
Bulletin I2403 rev. A 07/00
Switching
Parameter 22RIA Units Conditions
di/dt Max. rate of rise of turned-on TJ = TJ max., VDM = rated V
current V
Typical turn-on time 0.9 TJ = 25°C,
t
gt
Typical reverse recovery time 4 µs TJ = TJ max.,
t
rr
t
Typical turn-off time 110 TJ = TJ max., ITM = I
q
≤ 600V 200 A/µs Gate pulse = 20V, 15Ω, t
DRM
≤ 800V 18 0 I
V
DRM
≤ 1000V 16 0
V
DRM
V
≤ 1600V 15 0
DRM
= (2x rated di/dt) A
TM
at = rated V
I
TM
DRM/VRRM
= I
, tp > 200µs, di/dt = -10A/µs
T(AV)
di/dt = -10A/µs, dv/dt = 20V/µs linear to
67% V
, gate bias 0V-100W
DRM
(*) tq = 10µsup to 600V, tq = 30µs up to 1600V available on special request.
DRM
= 6µs, tr = 0.1µs max.
p
, TJ = 125°C
, tp > 200µs, VR = 100V,
T(AV)
Blocking
Parameter 22RIA Units Conditions
dv/dt Max. critical rate of rise of 100 TJ = TJ max. linear to 100% rated V
off-state voltage 300 (*) TJ = TJ max. linear to 67% rated V
(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 22RIA160S90.
V/µs
22RIA Series
DRM
DRM
Triggering
Parameter 22RIA Units Conditions
PGMMaximum peak gate power 8.0 TJ = TJ max.
P
Maximum average gate power 2.0
G(AV)
I
Max. peak positive gate current 1.5 A TJ = TJ max.
GM
-V
Maximum peak negative 10 V TJ = TJ max.
GM
gate voltage
I
DC gate current required 90 TJ = - 65°C
GT
to trigger 60 mA T
35 T
V
DC gate voltage required 3.0 TJ = - 65°C
GT
to trigger 2.0 V T
1.0 V T
DC gate current not to trigger 2.0 mA TJ = TJ max., V
I
GD
V
DC gate voltage not to trigger 0.2 V TJ = TJ max.
GD
W
= 25°C
J
= 125°C
J
= 25°C
J
= 125°C
J
V
= rated value
DRM
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Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-tocathode applied
= rated value
DRM
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
anode-to-cathode applied
V
DRM
3
Page 4
22RIA Series
Bulletin I2403 rev. A 07/00
Thermal and Mechanical Specification
Parameter 22RIA Units Conditions
TJMax. operating temperature range - 65 to 12 5 ° C
Max. storage temperature range - 6 5 to 125 ° C
T
stg
Max. thermal resistance, 0.86 K/W DC operation
R
thJC
junction to case
Max. thermal resistance, 0.35 K/W Mounting surface, smooth, flat and greased
R
thCS
case to heatsink
T Mounting torque to nut to device
20(27.5) 25 lbf-in Lubricated threads
0.23(0.32) 0.29 kgf.m (Non-lubricated threads)
2.3(3.1) 2.8 Nm
wt Approximate weight 14 (0.49) g (oz)
Case style TO-208AA (TO-48) See Outline Table
Conduction
∆R
thJC
(The following table shows the increment of thermal resistence R
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.21 0.15 K/W T
120° 0.25 0.25
90° 0.31 0.34
60° 0.45 0.47
30° 0.76 0.76
when devices operate at different conduction angles than DC)
thJC
= TJ max.
J
Ordering Information Table
Device Code
1 - Current code
2 - Essential part number
3 - Voltage code: Code x 10 = V
4 - None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M = Stud base TO-208AA (TO-48) M6 X 1
5 - Critical dv/dt: None = 300V/µs (Standard value)
4
22 RIA 160 M S90
2
1
3
(See Voltage Rating Table)
RRM
S90 = 1000V/µs (Special selection)
5
4
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Page 5
Outline Table
22RIA Series
Bulletin I2403 rev. A 07/00
Case Style TO-208AA (TO-48)
All dimensions in millimeters (inches)
130
120
110
100
90
Maxi mum Allo wabl e Case Temperatu re (°C)
80
0 5 10 15 20 25
22RIA Series (100 to 1200V)
R (DC) = 0.86 K/W
thJC
30°
60°
90°
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristic Fig. 2 - Current Ratings Characteristic
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Conductio n Angle
120°
180°
130
120
110
100
90
Maximum Allowable Cas e Temperat ure (°C)
80
0 10203040
22RIA Series (100 to 1200V)
R (DC) = 0.86 K/W
thJC
Conducti on Period
30°
60°
90°
120°
180°
DC
Average On-state Current (A)
5
Page 6
22RIA Series
Bulletin I2403 rev. A 07/00
40
180°
35
120°
30
25
90°
60°
30°
RMS Limit
20
15
10
5
Maximum Average On-state Power Loss (W)
0
0 5 10 15 20 25
Conducti on Angle
22RIA Series
(100 to 1200V)
T = 125°C
J
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
50
DC
45
180°
120°
40
90°
35
60°
30°
30
RMS Limit
25
20
15
10
5
Maximum Average On-state Power Loss (W)
0
0 5 10 15 20 25 30 3 5
Conducti on Period
22RIA Series
(100 to 1200V)
T = 125°C
J
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
R
t
h
2
K
3
K
/
W
4
K
/
W
5
K
/
W
7
K
/
W
1
0
K
/
W
S
A
/
W
=
1
K
/
W
D
e
l
t
a
R
0 25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
t
h
S
A
2
K
/
W
3
K
/
W
4
K
/
W
5
K
/
W
7
K
/
W
1
0
K
/
=
1
K
/
W
D
e
l
t
a
R
W
0 2 5 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
375
350
325
300
At Any Rated Load Conditi on And With
Rated V Applied Following Surge.
RRM
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
275
250
225
200
22RIA Series
175
Peak Half Sine Wave On-state Current (A)
(100 to 12 00V)
150
110100
Number Of Equal Amplitude Hal f Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
6
400
Maximum Non Repetitive Surge Current
J
375
350
325
300
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Volt age Reapp lied
Rated V Reapplied
J
RRM
275
250
225
200
22RIA Series
175
Peak Half Sine Wave On-state Current (A)
(100 to 1200V)
150
0.01 0.1 1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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Page 7
1000
5
100
22RIA Series
Bulletin I2403 rev. A 07/00
T = 25°C
10
J
T = 125°C
J
130
120
110
100
90
Maximum Allowable Case Temperature (° C)
80
0 5 10 15 20 2
Fig. 8 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
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Instantaneous On-state Current (A)
1
0.5 1 1.5 2 2. 5 3
Instantaneous On-state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
22RIA Series (1400 to 1600V)
R (DC) = 0.86 K/W
thJC
Conduction Angl e
30°
60°
90°
120°
180°
Average On-state Current (A)
40
180°
35
120°
30
25
20
90°
60°
30°
RMS Li mit
15
10
5
0
0 5 10 15 20 25
Conducti on Angl e
22RIA Series
(1400 to 1600V)
T = 125°C
J
Average On-state Current (A)
Fig. 10 - On-state Power Loss Characteristics
22RIA Series
(100 to 1200V)
130
22RIA Series (1400 to 1 600V)
R (DC) = 0.86 K/W
thJC
120
110
100
30°
60°
Conduction Per iod
90°
90
Maximum Allowable Case Temperature (°C)
80
0 10203040
120°
180°
Average On-state Current (A)
Fig. 9 - Current Ratings Characteristics
1
1
.
5
2
K
K
/
/
W
2
.5
3
K
4
K
5
K
7
K
1
0
K
W
K
/
W
/
W
/
W
/
W
/
W
/
W
R
K
/
t
W
h
S
A
=
0
.
5
K
/
W
D
e
l
t
a
R
0 255075100125
Maximum All owable Ambient Temperature (°C)
DC
7
Page 8
22RIA Series
Bulletin I2403 rev. A 07/00
55
DC
50
180°
45
120°
90°
40
60°
35
30°
30
RMS Limi t
25
20
15
10
5
Maximum Average On-state Power Loss (W)
0
0 5 10 15 20 25 30 35
Conducti on Period
22RIA Series
(1400 to 1600V)
T = 125° C
J
Average On-state Current (A)
Fig. 11 - On-state Power Loss Characteristics
300
280
260
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
240
220
200
180
22RIA Series
160
Peak Half Sine Wave On-state Current (A)
(1400 to 1600V)
140
110100
Number Of Equal Amplitud e Half Cycle Curr ent Pulses (N)
Fig. 12 - Maximum Non-Repetitive Surge Current
R
1
K
t
h
/
S
W
1
.
5
K
/
W
2
K
/
W
2
.
5
K
/
W
3
K
/
W
4
K
/
W
5
K
/
W
7
K
/
W
1
0
K
/
W
A
=
0
.
5
K
/
W
D
e
l
t
a
R
0255075100125
Maximum All owable Ambient Temperature (°C)
340
Maximum Non Repeti tive Surge Cur rent
320
300
280
260
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
240
220
200
180
160
22RIA Series
140
Peak Half Sine Wave On-state Current (A)
(1400 to 1600V)
120
0.01 0.1 1
Pulse Trai n Duration (s)
Fig. 13 - Maximum Non-Repetitive Surge Current
J
1000
T = 25°C
J
T = 125°C
100
J
10
Instantaneous On-state Current (A)
1
0123456
22RIA Series
(1400 to 1600V)
Instantaneous On-state Voltage (V)
Fig. 14 - Forward Voltage Drop Characteristics
8
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Page 9
Bulletin I2403 rev. A 07/00
1
Steady St ate Value
R = 0.86 K/W
thJC
0.1
Transient Thermal Impedance Z (K/W)
0.01
100
Instantaneous Gate Voltage (V)
0.1
thJC
(DC Operation)
22RIA Series
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 15 - Thermal Impedance Z
Rectangul ar gate p ulse
a) Recommended l oad li ne for
rated di/dt : 10V, 20ohms
tr <=0.5 µs, tp >= 6 µs
b) Recommended load l ine for
<=30% rated di/dt : 10V, 65ohms
10
tr<=1 µs, tp >= 6 µs
(b)
Tj = 25 °C
1
VGD
IGD
0.001 0.01 0.1 1 10 100
Tj = 125 °C
Instantaneous Gate Current (A)
(a)
Tj = -65 °C
22RIA Series Frequency Li mited by PG(AV)
Characteristics
thJC
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
(1)
Fig. 16 - Gate Characteristics
22RIA Series
(4)
(3)
(2)
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