The MX27C4100/4096 is a 5V only, 4M-bit, One Time
Programmable Read Only Memory. It is organized as
256K words by 16 bits per word(MX27C4096), 512K x 8
or 256K x 16(MX27C4100), operates from a single + 5
volt supply, has a static standby mode, and features fast
single address location programming. All programming
signals are TTL levels, requiring a single pulse. For
programming outside from the system, existing EPROM
PIN CONFIGURATIONS
SOP/PDIP(MX27C4100)
• Completely TTL compatible
• Operating current: 60mA
• Standby current: 100uA
• Package type:
- 40 pin plastic DIP
- 44 pin PLCC
- 40 pin SOP
programmers may be used. The MX27C4100/4096
supports a intelligent fast programming algorithm which
can result in programming time of less than two minutes.
This EPROM is packaged in industry standard 40 pin
dual-in-line packages, 40 lead SOP, and 44 lead PLCC
packages.
When the MX27C4100/4096 is delivered, or it is
erased, the chip has all 4M bits in the "ONE" or HIGH
state. "ZEROs" are loaded into the MX27C4100/4096
through the procedure of programming.
For programming, the data to be programmed is applied
with 16 bits in parallel to the data pins.
VCC must be applied simultaneously or before VPP,
and removed simultaneously or after VPP. When
programming an MXIC EPROM, a 0.1uF capacitor is
required across VPP and ground to suppress spurious
voltage transients which may damage the device.
FAST PROGRAMMING
The device is set up in the fast programming mode when
the programming voltage VPP = 12.75V is applied, with
VCC = 6.25 V and OE = VIH (Algorithm is shown in
Figure 1). The programming is achieved by applying a
single TTL low level 100us pulse to the CE input after
addresses and data line are stable. If the data is not
verified, an additional pulse is applied for a maximum of
25 pulses. This process is repeated while sequencing
through each address of the device. When the
programming mode is completed, the data in all address
is verified at VCC = VPP = 5V ± 10%.
The verification should be performed with OE and CE at
VIL(for MX27C4096), OE at VIL and CE at VIH(for
MX27C4100) and VPP at its programming voltage.
AUTO IDENTIFY MODE
The auto identify mode allows the reading out of a binary
code from an EPROM that will identify its manufacturer
and device type. This mode is intended for use by
programming equipment for the purpose of
automatically matching the device to be programmed
with its corresponding programming algorithm. This
mode is functional in the 25°C± 5°C ambient
temperature range that is required when programming
the MX27C4100/4096.
To activate this mode, the programming equipment
must force 12.0 ± 0.5 V on address line A9 of the device.
Two identifier bytes may then be sequenced from the
device outputs by toggling address line A0 from VIL to
VIH. All other address lines must be held at VIL during
auto identify mode.
Byte 0 ( A0 = VIL) represents the manufacturer code,
and byte 1 (A0 = VIH), the device identifier code. For the
MX27C4100/4096, these two identifier bytes are given
in the Mode Select Table. All identifiers for manufacturer
and device codes will possess odd parity, with the MSB
(Q15) defined as the parity bit.
READ MODE
PROGRAM INHIBIT MODE
Programming of multiple MX27C4100/4096's in parallel
with different data is also easily accomplished by using
the Program Inhibit Mode. Except for CE and OE, all like
inputs of the parallel MX27C4100/4096 may be
common. A TTL low-level program pulse applied to an
MX27C4100/4096 CE input with VPP = 12.5 ± 0.5 V will
program the MX27C4100/4096. A high-level CE input
inhibits the other MX27C4100/4096s from being
programmed.
PROGRAM VERIFY MODE
Verification should be performed on the programmed
bits to determine that they were correctly programmed.
P/N: PM0197
The MX27C4100/4096 has two control functions, both of
which must be logically satisfied in order to obtain data
at the outputs. Chip Enable (CE) is the power control
and should be used for device selection. Output Enable
(OE) is the output control and should be used to gate
data to the output pins, independent of device selection.
Assuming that addresses are stable, address access
time (tACC) is equal to the delay from CE to output (tCE).
Data is available at the outputs tOE after the falling edge
of OE's, assuming that CE has been LOW and
addresses have been stable for at least tACC - t OE.
WORD-WIDE MODE
With BYTE/VPP at VCC ± 0.2V outputs Q0-7 present
data Q0-7 and outputs Q8-15 present data Q8-15, after
CE and OE are appropriately enabled.
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4
Page 5
MX27C4100/27C4096
BYTE-WIDE MODE
With BYTE/VPP at GND ± 0.2V, outputs Q8-15 are tristated. If Q15/A-1 = VIH, outputs Q0-7 present data bits
Q8-15. If Q15/A-1 = VIL, outputs Q0-7 present data bits
Q0-7.
STANDBY MODE
The MX27C4100/4096 has a CMOS standby mode
which reduces the maximum VCC current to 100 uA. It
is placed in CMOS standby when CE is at VCC ± 0.3 V.
The MX27C4100/4096 also has a TTL-standby mode
which reduces the maximum VCC current to 1.5 mA. It
is placed in TTL-standby when CE is at VIH. When in
standby mode, the outputs are in a high-impedance
state, independent of the OE input.
TWO-LINE OUTPUT CONTROL FUNCTION
To accommodate multiple memory connections, a twoline control function is provided to allow for:
used between VCC and GND for each eight devices.
The location of the capacitor should be close to where
the power supply is connected to the array.
1. Low memory power dissipation,
2. Assurance that output bus contention will not
occur.
It is recommended that CE be decoded and used as the
primary device-selecting function, while OE be made a
common connection to all devices in the array and
connected to the READ line from the system control bus.
This assures that all deselected memory devices are in
their low-power standby mode and that the output pins
are only active when data is desired from a particular
memory device.
SYSTEM CONSIDERATIONS
During the switch between active and standby
conditions, transient current peaks are produced on the
rising and falling edges of Chip Enable. The magnitude
of these transient current peaks is dependent on the
output capacitance loading of the device. At a minimum,
a 0.1 uF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
Vcc and GND to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM
arrays, a 4.7 uF bulk electrolytic capacitor should be
P/N: PM0197
5
REV. 3.4, AUG. 22, 2001
Page 6
MX27C4100/27C4096
MODE SELECT TABLE (MX27C4096)
PINS
MODECEOEA0A9VPPOUTPUTS
ReadVILVILXXVCCDOUT
Output DisableVILVIHXXVCCHigh Z
Standby (TTL)VIHXXXVCCHigh Z
Standby (CMOS)VCC±0.3VXXXVCCHigh Z
ProgramVILVIHXXVPPDIN
Program VerifyVIHVILXXVPPDOUT
Program InhibitVIHVIHXXVPPHigh Z
Manufacturer Code(3)VILVILVILVHVCC00C2H
Device Code(3)VILVILVIHVHVCC0151H
NOTES: 1. VH = 12.0 V ± 0.5 V
2. X = Either VIH or VIL
3. A1 - A8 = A10 - A17 = VIL(For auto select)
4. See DC Programming Characteristics for VPP voltage during
programming.
MODE SELECT TABLE (MX27C4100)
BYTE/
MODECEOEA9A0Q15/A-1VPP(5)Q8-14Q0-7
Read (Word)VILVILXXQ15 OutVCCQ8-14 OutQ0-7 Out
Read (Upper Byte)VILVILXXVIHGNDHigh ZQ8-15 Out
Read (Lower Byte)VILVILXXVILGNDHigh ZQ0-7 Out
Output DisableVILVIHXXHigh ZXHigh ZHigh Z
StandbyVIHXXXHigh ZXHigh ZHigh Z
ProgramVILVIHXXQ15 InVPPQ8-14 InQ0-7 In
Program VerifyVIHVILXXQ15 OutVPPQ8-14 OutQ0-7 Out
Program InhibitVIHVIHXXHigh ZVPPHigh ZHigh Z
Manufacturer Code(3)VILVILVHVIL0BVCC00HC2H
Device Code(3)VILVILVHVIH1BVCC38H00H
NOTES: 1. VH = 12.0V ± 0.5V
2. X = Either VIH or VIL
3. A1 - A8, A10 - A17 = VIL(for auto select)
4. See DC Programming Characteristics for VPP voltages.
5. BYTE/VPP is intended for operation under DC Voltage conditions
only.
6. Manufacture code = 00C2H
Device code = B800H
P/N: PM0197
6
REV. 3.4, AUG. 22, 2001
Page 7
FIGURE 1. FAST PROGRAMMING FLOW CHART
MX27C4100/27C4096
START
ADDRESS = FIRST LOCATION
VCC = 6.25V
VPP = 12.75V
X = 0
PROGRAM ONE 100us PULSE
INTERACTIVE
SECTION
VERIFY SECTION
INCREMENT ADDRESS
FAIL
NO
INCREMENT X
X = 25?
NO
VERIFY BYTE
?
PASS
LAST ADDRESS
YES
VCC = VPP = 5.25V
VERIFY ALL BYTES
?
PASS
DEVICE PASSED
YES
FAIL
FAIL
DEVICE FAILED
P/N: PM0197
7
REV. 3.4, AUG. 22, 2001
Page 8
SWITCHING TEST CIRCUITS
MX27C4100/27C4096
DEVICE
UNDER
TEST
CL = 100 pF including jig capacitance(30pF for 100 ns parts)
SWITCHING TEST WAVEFORMS
AC driving levels
AC TESTING:
AC driving levels are 2.4V/0.4V for commercial grade , 3.0V/0V for industrial grade.
Input pulse rise and fall times are <10ns.
CL
INPUT
6.2K ohm
2.0V
0.8V
TEST POINTS
1.8K ohm
DIODES = IN3064
OR EQUIVALENT
2.0V
0.8V
OUTPUT
+5V
P/N: PM0197
AC driving levels
1.5V
INPUT
AC TESTING: (1)AC driving levels are 3.0V/0V for both commercial grade and industrial grade.
Input pulse rise and fall times are < 10ns.
(2)For MX27C4100/4096-10
TEST POINTS
OUTPUT
8
1.5V
REV. 3.4, AUG. 22, 2001
Page 9
MX27C4100/27C4096
ABSOLUTE MAXIMUM RATINGS
RATINGVALUE
Ambient Operating Temperature-40oC to 85oC
Storage Temperature-65oC to 125oC
Applied Input Voltage-0.5V to 7.0V
Applied Output Voltage-0.5V to VCC + 0.5V
VCC to Ground Potential-0.5V to 7.0V
A9 & VPP-0.5V to 13.5V
NOTICE:
Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended period may affect reliability.
NOTICE:
Specifications contained within the following tables are subject to
change.
DC/AC Operating Conditions for Read Operation
MX27C4100/4096
-10-12-15
Operating TemperatureCommercial0°C to 70°C0°C to 70°C0°C to 70°C
SYMBOLPARAMETERMIN.MAX.MIN.MAX.MIN.MAX. UNIT CONDITIONS
tACCAddress to Output Delay100120150nsCE = OE = VIL
tCEChip Enable to Output Delay100120150n sOE = VIL
tOEOutput Enable to Output Delay455065nsCE = VIL
tDFOE High to Output Float,030035 050ns