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Bulletin I2102
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20ETS... SERIES
SURFACE MOUNTABLE
INPUT RECTIFIER DIODE
Description/Features
The 20ETS.. rectifier series has been optimized
for very low forward voltage drop, with moderate
leakage. The glass passivation technology used
has reliable operation up to 150°C junction
temperature.
Typical applications are in input rectification and
these products are designed to be used with
International Rectifier Switches and Output
Rectifiers which are available in identical package
outlines.
Output Current in Typical Applications
V
I
FSM
V
< 1V @ 10A
F
= 300A
800 to 1600V
RRM
Capacitive input filter TA = 55°C, T J = 125°C,
common heatsink of 1°C/W
Major Ratings and Characteristics
Characteristics 20ETS.. Units
I
Sinusoidal
F(AV)
waveform
V
RRM
I
FSM
V
@ 10 A, TJ = 25°C 1.0 V
F
T
J
20 A
800 to 1600 V
300 A
- 40 to 150 °C
Single-phase Bridge Three-phase Bridge Units
16.3 21
TO-220AC
Also available in SMD-220 package (series 20ETS..S)
A
1
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20ETS.. Series
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V oltage Ratings
V
Part Number
20ETS08 800 900
20ETS12 1200 1300 1
20ETS16 1600 1700
Provide terminal coating for voltages above 1200V
Absolute Maximum Ratings
Parameters 20ETS.. Units Conditions
I
Max. Average Forward Current 20 A 50% duty cycle @ TC = 105° C, sinusoidal wave form
F(AV)
I
Max. Peak One Cycle Non-Repetitive 250 10ms Sine pulse, rated V
FSM
Surge Current 300 10ms Sine pulse, no voltage reapplied
peak reverse voltage peak reverse voltage 150°C
, maximum V
RRM
, maximum non repetitive I
RSM
RRM
VV m A
applied
RRM
A
I2t Max. I2t for fusing 316 10ms Sine pulse, rated V
A2s
RRM
applied
442 10ms Sine pulse, no voltage reapplied
I2√t Max. I2√t for fusing 3160 A2√s t = 0.1 to 10ms, no voltage reapplied
Electrical Specifications
Parameters 20ETS.. Units Conditions
V
Max. Forward Voltage Drop 1.1 V @ 20A, TJ = 25°C
FM
r
Forward slope resistance 10.4 mΩ
t
V
Threshold voltage 0.85 V
F(TO)
I
Max. Reverse Leakage Current 0.1 TJ = 25 °C
RM
mA
1.0 TJ = 150 °C
TJ = 150°C
VR = rated V
RRM
Thermal-Mechanical Specifications
Parameters 20ETS.. Units Conditions
T
Max. Junction Temperature Range - 40 to 150 °C
J
T
Max. Storage Temperature Range - 40 to 150 °C
stg
R
Max. Thermal Resistance Junction 1.3 °C/W DC operation
thJC
to Case
R
Max. Thermal Resistance Junction 62 °C/W
thJA
to Ambient
R
Typ. Thermal Resistance Case 0.5 °C/W Mounting surface, smooth and greased
thCS
to Ambient
wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5)
Max. 12 (10)
Case Style TO-220AC
Kg-cm
(Ibf-in)
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150
140
130
120
110
100
Maximum Allowable Case Temperature (°C
024681 01 21 41 61 82 0
20ETS.. Series
R (DC) = 1.3 K/W
thJC
Conducti on An gle
60° 90°
30°
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
30
25
20
15
10
180°
120°
90°
60°
30°
RMS Li m it
Conduction Angle
120°
180°
150
140
130
120
110
100
90
Maximum Allowable Case Temperature (°C
0 5 10 15 20 25 30
20 ETS.. Se ries
R (DC) = 1.3 K/W
thJC
30°
60°
90°
120°
Average Forwa rd Curren t (A)
Fig. 2 - Current Rating Characteristics
35
30
25
20
RMS Li m it
15
10
DC
180°
120°
90°
60°
30°
Conduction Period
180°
Conduction Period
DC
5
0
Maximum Average Forward Power Loss (W
0481 21 62 0
Average Forw ard Current (A)
20 ETS.. Se ri es
T = 1 50°C
J
5
0
Maximum Average Forward Power Loss (W
0 5 10 15 20
Average Forwa rd Current (A)
20ETS.. Seri es
T = 1 50°C
J
Fig. 4 - Forward Power Loss Characteristics Fig. 3 - Forward Power Loss Characteristics
1000
T = 25°C
J
100
10
Instantaneous Forward Current (A)
1
00 . 511 . 522 . 533 . 5
Instantaneous Forward Volta g e (V)
20ETS.. Series
T = 15 0°C
J
300
250
200
150
100
Peak Half Sine Wave F orward Current (A)
Maximum Non Repetitive Surge Curren
20 ETS.. Seri es
50
0.01 0.1
Pulse Train Duration (s)
Versus Pulse Train Duration
In itial T = 150°C
J
No Voltage Reapplied
Rated V Reapplied
RRM
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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10
thJC
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Steady State Value
(DC Operation)
Tran sient Therma l Im peda n ce Z (K/W
0.01
0.0001 0.001 0.01 0.1
Outline Table
Single Pulse
15.24 (0.60)
14.84 (0.58)
Square Wave Pulse Duratio n (s)
Fig. 7 - Thermal Impedance Z
10.54 (0.41)
MAX.
1
3
3.78 (0.15)
3.54 (0.14)
2.92 (0.11)
2.54 (0.10)
TERM 2
DIA.
20EPS.. Series
Characteristics
thJC
6.48 (0.25)
6.23 (0.24)
1.32 (0.05)
1.22 (0.05)
2°
4.57 (0.18)
4.32 (0.17)
14.09 (0.55)
13.47 (0.53)
1.40 (0.05)
1.15 (0.04)
3.96 (0.16)
3.55 (0.14)
2.04 (0.080) MAX.
0.94 (0.04)
0.69 (0.03)
3
1
0.61 (0.02) MAX.
0.10 (0.004)
2.89 (0.11)
2.84 (0.10)
Dimensions in millimeters and inches
5.08 (0.20) REF.
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Ordering Information Table
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Device Code
20ETS.. Series
20 E T S 16
1
1 - Current Rating
2 - Circuit Configuration
E = Single Diode
3 - Package
T = TO-220AC
4 - Type of Silicon
S = Standard Recovery Rectifier
5 - Voltage code: Code x 100 = V
3
5 24
RRM
08 = 800V
12 = 1200V
16 = 1600V
BASE
CATHODE
1
CATHODE
2
3
ANODE
5
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