
1N4148 / 1N4448 / 1N914B 
FEATURES
● Low power loss, high efficiency 
● Ideal for automated placement 
● High surge current capability 
● Compliant to RoHS directive 2011/65/EU and 
in accordance to WEEE 2002/96/EC 
● Halogen-free according to IEC 61249-2-21  
APPLICATIONS 
● Switching mode power supply (SMPS) 
MECHANICAL DATA 
● Case: DO-35 
● Packing code with suffix "G" means green compound 
(halogen-free) 
● Terminal: Matte tin plated leads, solderable per J-STD-002 
● Polarity: Indicated by cathode band 
● Weight: 109 ± 4 mg (approximately) 
ABSOLUTE MAXIMUM RATINGS (T
A 
= 25°C unless otherwise noted) 
Repetitive peak reverse voltage 
Repetitive peak forward current 
Pluse width = 1μs, Square wave 
Non-Repetitive peak forward current 
Junction temperature range 
Storage temperature range 
Junction-to-ambient thermal resistance 
Taiwan Semiconductor 
500mW, High Speed Switching Diode 
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1N4148 / 1N4448 / 1N914B 
ELECTRICAL SPECIFICATIONS (T
A 
= 25°C unless otherwise noted)
Forward voltage 
per diode 
(1)
Reverse voltage 
IR = 100 μA, TJ = 25°C 
Reverse current 
@ rated VR per 
diode 
(2)
IF= 10mA , VR=6V, RL= 100Ω ,  
IRR= 1mA 
Taiwan Semiconductor 
Notes: 
1. Pulse test with PW=0.3 ms 
2. Pulse test with PW=30 ms 
Notes: 
1. "xxxx" is device code from 4148 to 914B 
*: optional available 
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CHARACTERISTICS CURVES 
        Fig.1 Typical Forward Characteristics     
Fig. 2 Reverse Current VS. Reverse Voltage 
  Fig.3 Admissible Power Dissipation Curve 
     Fig.4 Typical Junction Capacitance 
0.001
0.01
0.1
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
1
10
100
1000
10000
0 20 40 60 80 100 120
0
100
200
300
400
500
0 25 50 75 100 125 150 175 200
0
0.3
0.6
0.9
1.2
1.5
0 5 10 15 20 25 30
Forward Current (A) 
Power Dissipation (mW) 
Junction Capacitance (pF)
(TA = 25°C unless otherwise noted) 
1N4148 / 1N4448 / 1N914B 
Taiwan Semiconductor 
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PACKAGE OUTLINE DIMENSION 
MARKING DIAGRAM 
1N4148 / 1N4448 / 1N914B 
Taiwan Semiconductor 
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1N4148 / 1N4448 / 1N914B 
Taiwan Semiconductor 
Notice 
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