
1N4148 / 1N4448 / 1N914B
FEATURES
● Low power loss, high efficiency
● Ideal for automated placement
● High surge current capability
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
MECHANICAL DATA
● Case: DO-35
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 109 ± 4 mg (approximately)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Repetitive peak reverse voltage
Repetitive peak forward current
Pluse width = 1μs, Square wave
Non-Repetitive peak forward current
Junction temperature range
Storage temperature range
Junction-to-ambient thermal resistance
Taiwan Semiconductor
500mW, High Speed Switching Diode
1 Version:I1702

1N4148 / 1N4448 / 1N914B
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
Forward voltage
per diode
(1)
Reverse voltage
IR = 100 μA, TJ = 25°C
Reverse current
@ rated VR per
diode
(2)
IF= 10mA , VR=6V, RL= 100Ω ,
IRR= 1mA
Taiwan Semiconductor
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
Notes:
1. "xxxx" is device code from 4148 to 914B
*: optional available
2 Version:I1702

CHARACTERISTICS CURVES
Fig.1 Typical Forward Characteristics
Fig. 2 Reverse Current VS. Reverse Voltage
Fig.3 Admissible Power Dissipation Curve
Fig.4 Typical Junction Capacitance
0.001
0.01
0.1
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
1
10
100
1000
10000
0 20 40 60 80 100 120
0
100
200
300
400
500
0 25 50 75 100 125 150 175 200
0
0.3
0.6
0.9
1.2
1.5
0 5 10 15 20 25 30
Forward Current (A)
Power Dissipation (mW)
Junction Capacitance (pF)
(TA = 25°C unless otherwise noted)
1N4148 / 1N4448 / 1N914B
Taiwan Semiconductor
3 Version:I1702

PACKAGE OUTLINE DIMENSION
MARKING DIAGRAM
1N4148 / 1N4448 / 1N914B
Taiwan Semiconductor
4 Version:I1702

1N4148 / 1N4448 / 1N914B
Taiwan Semiconductor
Notice
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5 Version:I1702