Datasheet 1Ν4148 Specification

DATA SH EET

DISCRETE SEMICONDUCTORS

6

M3D17

1N4148; 1N4448

High-speed diodes

Product data sheet
Supersedes data of 2002 Jan 23

2004 Aug 10

NXP Semiconductors Product data sheet

High-speed diodes 1N4148; 1N4448

FEATURES

• Hermetically sealed leaded glass SOD27 (DO-35)
package

• High switching speed: max. 4 ns

• General application

• Continuous reverse voltage: max. 100 V

• Repetitive peak reverse voltage: max. 100 V

• Repetitive peak forward current: max. 450 mA.

handbook, halfpage

The diodes are type branded.

k

a

MAM246

APPLICATIONS

Fig.1 Simplified outline (SOD27; DO-35) and

symbol.

• High-speed switching.

DESCRIPTION

The 1N4148 and 1N4448 are high-speed switching diodes
fabricated in planar technology, and encapsulated in
hermetically sealed leaded glass SOD27 (DO-35)
packages.

MARKING

TYPE NUMBER MARKING CODE

1N4148 1N4148PH or 4148PH
1N4448 1N4448

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

1N4148 − hermetically sealed glass package; axial leaded; 2 leads SOD27
1N4448

2004 Aug 10 2

NXP Semiconductors Product data sheet

High-speed diodes 1N4148; 1N4448

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

F

I

FRM

I

FSM

P
T
T

RRM
R

tot
stg
j

repetitive peak reverse voltage − 100 V
continuous reverse voltage − 100 V
continuous forward current see Fig.2; note 1 − 200 mA
repetitive peak forward current − 450 mA
non-repetitive peak forward current square wave; Tj = 25 °C prior to

surge; see

Fig.4
t = 1 µs − 4 A
t = 1 ms − 1 A
t = 1 s − 0.5 A

total power dissipation T

= 25 °C; note 1 − 500 mW

amb

storage temperature −65 +200 °C
junction temperature − 200 °C

Note

1. Device mounted on an FR4 printed-circuit board; lead length 1 0 mm.

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

forward voltage see Fig.3

1N4148 IF = 10 mA − 1 V
1N4448 IF = 5 mA 0.62 0.72 V

IF = 100 mA − 1 V

I

R

reverse current VR = 20 V; see Fig.5 25 nA

VR = 20 V; Tj = 150 °C; see Fig.5 − 50 µA

I

R

C

d

t

rr

V

fr

reverse current; 1N4448 VR = 20 V; Tj = 100 °C; see Fig.5 − 3 µA
diode capacitance f = 1 MHz; VR = 0 V; see Fig.6 − 4 pF
reverse recovery time when switched from IF = 10 mA to

= 60 mA; RL = 100 Ω;

I

R

measured at I

= 1 mA; see Fig.7

R

forward recovery voltage when switched from IF = 50 mA;

= 20 ns; see Fig.8

t

r

− 4 ns

− 2.5 V

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th(j-tp)
th(j-a)

thermal resistance from junction to tie-point lead length 10 mm 240 K/W
thermal resistance from junction to ambient lead length 10 mm; note 1 350 K/W

Note

1. Device mounted on a printed-circuit board withou t metallization pad.

2004 Aug 10 3

NXP Semiconductors Product data sheet

High-speed diodes 1N4148; 1N4448

GRAPHICAL DATA

amb

mbg451

(°C)

300

I

F

(mA)

200

100

0

0 100 200

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

T

Fig.2 Maximum permissible continuous forward

current as a function of ambient
temperature.

600

handbook, halfpage

I

F

(mA)

400

200

0

012

(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.

(1) (2) (3)

MBG464

VF (V)

Fig.3 Forward current as a function of forward

voltage.

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents.
T

= 25 °C prior to surge.

j

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

MBG704

10

2

10

3

10

tp (µs)

4

10

2004 Aug 10 4

NXP Semiconductors Product data sheet

High-speed diodes 1N4148; 1N4448

T

(°C)

j

mgd290

(2)

200

3

10

I

R

(µA)

2

10

10

1

1

−

10

2

−

10

0 100

(1) VR = 75 V; typical values.
(2) VR = 20 V; typical values.

(1)

Fig.5 Reverse current as a function of junction

temperature.

1.2

handbook, halfpage

C

d

(pF)

1.0

0.8

0.6

0.4
01020

f = 1 MHz; Tj = 25 °C.

MGD004

VR (V)

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

2004 Aug 10 5

NXP Semiconductors Product data sheet

High-speed diodes 1N4148; 1N4448

handbook, full pagewidth

R = 50

Ω

S

V = V I x R

RF S

(1) IR = 1 mA.

I

F

D.U.T.

SAMPLING

OSCILLOSCOPE

Ω

R = 50

i

MGA881

t

r

10%

V

R

90%

t

p

input signal

Fig.7 Reverse recovery voltage test circuit and waveforms.

t

I

F

t

rr

t

(1)

output signal

R = 50

S

I

Ω

Ω1 k Ω450

D.U.T.

OSCILLOSCOPE

R = 50

Ω

i

MGA882

I

10%

t

r

90%

t

p

input

signal

V

V

fr

t

t

output

signal

Fig.8 Forward recovery voltage test circuit and waveforms.

2004 Aug 10 6

NXP Semiconductors Product data sheet

7

High-speed diodes 1N4148; 1N4448

PACKAGE OUTLINE

Hermetically sealed glass package; axial leaded; 2 leads

LD L

DIMENSIONS (mm are the original dimensions)

UNIT

mm

Note

1. The marking band indicates the cathode.

b

max.

OUTLINE

VERSION

SOD27 DO-35A24 SC-40

max.

0.56

max.

IEC JEDEC JEITA

G

D

L

1

min.

25.44.251.85

REFERENCES

SOD2

(1)

b

G

1

0 1 2 mm

scale

EUROPEAN

PROJECTION

ISSUE DATE

97-06-09
05-12-22

2004 Aug 10 7

NXP Semiconductors Product data sheet

High-speed diodes 1N4148; 1N4448

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document co ntains th e product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

DISCLAIMERS
General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be su itable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.

Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions

2004 Aug 10 8

60134) may cause permanent damage to

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.

Contact information

For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [e-mail]

© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industri al or intellectual property rights.

Printed in The Netherlands R76/05/pp9 Date of release: 2004 Aug 10 Document order number: 9397 750 13541