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Variable Capacitance Diode
Description
The 1T407 is a variable capacitance diode
designed for electronic tuning of wide-band CATV
tuners using a super-small-miniature flat package
(SSVC).
Features
• Super-small-miniature flat package
• Low series resistance: 1.1 Ω Max. (f=470 MHz)
• Large capacitance ratio: 15.5 Typ. (C2/C25)
21.5 Min. (C1/C28)
1.03 Min. (C25/C28)
• Small leakage current: 10 nA Max. (VR=28 V)
• Capacitance deviation in a matching group:
within 2 %
1T407
M-290
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage VR 34 V
• Operating temperature Topr –20 to +75 °C
• Storage temperature Tstg –65 to +150 °C
Applications
Electronic tuning of wide-band CATV tuners
Structure
Silicon epitaxial planar type diode
Electrical Characteristics (Ta=25 °C)
Item
Reverse current
Reverse voltage
Diode capacitance
Capacitance ratio
Series resistance
Capacitance
deviation in a
matching group
Symbol
IR
VR
C2
C25
C2/C25
C1/C28
C25/C/28
rs
∆C
Conditions
VR=28 V
IR=1 µA
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz
CD=14 pF, f=470 MHz
VR=1 to 28 V, f= MHz
Min.
34
42.86
2.56
14.5
21.5
1.03
Typ.
15.5
Max.
10
50.96
2.99
1.1
2
Unit
nA
V
pF
pF
Ω
%
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E95920-TE
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1T407
Diode capacitance vs. Reverse voltage
100
50
20
10
5
C-Diode capacitance (pF)
2
1
12 51020 50
R-Reverse voltage (V)
V
Ta=25°C
Reverse current vs. Ambient temperature
VR=28V
100
10
IR-Reverse current (pA)
1
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
0.80
Forward voltage vs. Ambient temperature
0.70
0.60
-Forward voltage (V)
F
V
0.50
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
IF=1mA
50
Reverse voltage vs. Ambient temperature
45
40
-Reverse voltage (V)
R
V
35
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
IR=10µ
A
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1.03
1T407
Diode capacitance vs. Ambient temperature
VR=1V
1.02
1.01
1.00
0.99
C (Ta)/C (25 °C)-Diode capacitance
0.98
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
Reverse current vs. Reverse voltage
100
Ta=80°C
VR=2V
VR=7V
VR=25V
VR=15V
Temperature coefficient of diode capacitance
1000
10
-Reverse current (pA)
R
I
1
0.1
1 3 10 30
R-Reverse voltage (V)
V
Ta=60°C
Ta=25°C
500
200
100
Temperature coefficient (ppm/°C)
50
12 510
R-Reverse voltage (V)
V
20 50
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Package Outline Unit : mm
0.8 ± 0.1
1.3 ± 0.1
1T407
M-290
A
M
0.2
A
1.7 ± 0.1
10° MAX
0.2 ± 0.05
Mark
SONY CODE
EIAJ CODE
JEDEC CODE
10° MAX
b
c
b
M-290
0.7 ± 0.1
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
PACKAGE WEIGHT
c
BASE METAL
0.11 ± 0.005
0.3 ± 0.025
EPOXY RESIN
SOLDER PLATING
COPPER
0.002g
1 : Cathode
12
S7
2 : Anode
WITH PLATING
+ 0.05
0.11
–
0.01
+ 0.05
0.3
– 0.02
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