Datasheet 1T399 Datasheet (Sony)

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E97454A82-TE
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage VR 34 V
• Storage temperature Tstg –65 to +150 °C
Description
The 1T399 is a variable capacitance diode designed for the electronic tuning of wide-band CATV tuners, and it has a super miniature package.
Features
• Super miniature package
• Small series resistance 0.75 Ω Max. (f=470 MHz)
• Large capacitance ratio 11.7 Typ. (C2/C25)
18.0 Typ. (C1/C28)
• Small leak current 10 nA Max. (VR=28 V)
• Capacitance deviation in a matching group:
within 2 %
Applications
Electronic tuning of wide-band CATV tuners
Structure
Silicon epitaxial planar-type diode
Variable Capacitance Diode
M-235
1T399
Electrical Characteristics (Ta=25 °C)
Item
Reverse current Diode capacitance
Capacitance ratio Series resistance
Capacitance deviation in a matching group
Symbol
IR
C2
C25
C2/C25
C25/C28
rs
∆C
Conditions VR=28 V VR=2 V, f=1 MHz VR=25 V, f=1 MHz
CD=14 pF, f=470 MHz VR=2 to 25 V, f=1 MHz
Min. Typ. Max. Unit
10 nA
29.50 35.50 pF
2.53 2.93 pF
11.0 11.7
1.03
0.75 Ω 2%
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1T399
Diode capacitance vs. Reverse voltage
1 2 5 10 20 50
V
R – Reverse voltage (V)
C – Diode capacitance (pF)
Ta = 25°C
Reverse current vs. Ambient temperature
100
1
10
–20
Ta – Ambient temperature [°C]
I
R
– Reverse current (pA)
0 20 40 60
Forward voltage vs. Ambient temperature
–20 0 20 40 60 80
Ta – Ambient temperature (°C)
V
F
– Forward voltage (V)
IF = 1mA
Reverse voltage vs. Ambient temperature
–20 0 20 40 60
Ta – Ambient temperature (°C)
V
R
– Reverse voltage (V)
50
45
40
35
IR = 10µA
VR = 28V
0.80
0.70
0.60
0.50
100
50
20
10
1
2
80
80
5
Example of Representative Characteristics
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1T399
Diode capacitance vs. Ambient temperature
–20 0 20 40 60 80
Ta – Ambient temperature (°C)
C (Ta)/C (25°C) – Diode capacitance
VR = 1V
Temperature coefficient of diode capacitance
1 2 5 10 20
V
R – Reverse voltage (V)
Temperature coefficient (ppm/°C)
1000
500
200
50
Reverse current vs. Reverse voltage
1
V
R – Reverse voltage (V)
I
R
– Reverse current (pA)
3 10 30
VR = 2V
VR = 7V V
R = 15V
V
R = 25V
100
Ta = 25°C
Ta = 80°C
Ta = 60°C
1.03
1.02
1.01
1.00
0.99
0.98
100
10
0.1
1
50
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Package Outline Unit : mm
AAA
M-235
AAA
1T399
∗1.25
2
1
+ 0.2 – 0.1
0.3
0.3
+ 0.1 – 0.05
∗0.9 ± 0.1
+ 0.1 – 0.05
2.5 ± 0.2
∗1.7 ± 0.1
NOTE: Dimension “∗” does not include mold protrusion.
0.2
0.11
+ 0.1 – 0.06
0 ± 0.05
0° to 10°
Marking
SONY CODE EIAJ CODE
JEDEC CODE
M-235
CATHODE MARK
2
99
B
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PACKAGE WEIGHT
Notes
1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.)
0.1g
1 to 9(for Jan.to Sept.)
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