Page 1
1SMB5.0AT3 Series
s
f
600 Watt Peak Power Zener
Transient Voltage
Suppressors
Unidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
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PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.0 V − 170 V,
600 W PEAK POWER
Features
• Working Peak Reverse Voltage Range − 5.0 V to 170 V
• Standard Zener Breakdown Voltage Range − 6.7 V to 199 V
• Peak Power − 600 W @ 1.0 ms
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5.0 mA Above 10 V
• UL 497B for Isolated Loop Circuit Protection
• Response Time is Typically < 1.0 ns
• Pb−Free Packages are Available
Mechanical Characteristics
Void-free, transfer-molded, thermosetting plastic
CASE:
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
Cathode Anode
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
AYWW
xx G
G
A = Assembly Location
Y = Year
WW = Work Week
xx = Device Code (Refer to page 3)
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
†
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 8
1SMBxxxAT3 SMB 2500/Tape & Reel
1SMBxxxAT3G SMB
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 o
this data sheet.
1 Publication Order Number:
(Pb−Free)
2500/Tape & Reel
1SMB5.0AT3/D
Page 2
1SMB5.0AT3 Series
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms P
DC Power Dissipation @ TL = 75°C
PK
P
D
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ TA = 25°C
R
q
JL
P
D
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
Forward Surge Current (Note 4) @ TA = 25°C I
Operating and Storage Temperature Range TJ, T
R
q
JA
FSM
stg
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
600 W
3.0
40
25
0.55
4.4
226
W
mW/°C
°C/W
W
mW/°C
°C/W
100 A
−65 to +150 °C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless
A
otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A)
Symbol Parameter
V
I
PP
V
RWM
I
V
I
I
V
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
C
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
Test Current
T
Forward Current
F
Forward Voltage @ I
F
F
RWM
T
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non−repetitive duty cycle.
VCV
V
RWM
BR
Uni−Directional TVS
I
I
F
I
V
R
F
I
T
I
PP
V
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2
Page 3
1SMB5.0AT3 Series
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
V
RWM
Device*
1SMB5.0AT3, G
1SMB6.0AT3, G
1SMB6.5AT3, G
1SMB7.0AT3, G
1SMB7.5AT3, G
1SMB8.0AT3, G
1SMB8.5AT3, G
1SMB9.0AT3, G
1SMB10AT3, G
1SMB11AT3, G
1SMB12AT3, G
1SMB13AT3, G
1SMB14AT3, G
1SMB15AT3, G
1SMB16AT3, G
1SMB17AT3, G
1SMB18AT3, G
1SMB20AT3, G
1SMB22AT3, G
1SMB24AT3, G
1SMB26AT3, G
1SMB28AT3, G
1SMB30AT3, G
1SMB33AT3, G
1SMB36AT3, G
1SMB40AT3, G
1SMB43AT3, G
1SMB45AT3, G
1SMB48AT3, G
1SMB51AT3, G
1SMB54AT3, G
1SMB58AT3, G
1SMB60AT3, G
1SMB64AT3, G
1SMB70AT3, G
1SMB75AT3, G
1SMB85AT3, G
1SMB90AT3, G
1SMB100AT3, G
1SMB110AT3, G
1SMB120AT3, G
1SMB130AT3, G
1SMB150AT3, G
1SMB160AT3, G
1SMB170AT3, G
Device
Marking
KE
KG
KK
KM
KP
KR
KT
KV
KX
KZ
LE
LG
LK
LM
LP
LR
LT
LV
LX
LZ
ME
MG
MK
MM
MP
MR
MT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NV
NX
NZ
PE
PG
PK
PM
PP
PR
(Note 6)
Volts
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
85
90
100
110
120
130
150
160
170
I
@ V
R
RWM
mA
800
800
500
500
100
50
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
55.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
6. A transient suppressor is normally selected according to the working peak reverse voltage (V
the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25°C.
8. Surge current waveform per Figure 2 and derate per Figure 4 of the General Data − 600 W at the beginning of this group.
†Please see 1SMB10CAT3 to 1SMB78CAT3 for Bidirectional devices.
*The “G” suffix indicates Pb−Free package available.
Breakdown Voltage VC @ IPP (Note 8)
VBR (Note 7) Volts @ I
Min Nom Max mA
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
94.4
100
111
122
133
144
167
178
189
6.7
7.02
7.6
8.19
8.77
9.36
9.92
10.55
11.7
12.85
14
15.15
16.4
17.6
18.75
19.9
21.05
23.35
25.65
28.1
30.4
32.75
35.05
38.65
42.1
46.75
50.3
52.65
56.1
59.7
63.15
67.8
70.2
74.85
81.9
87.7
99.2
105.5
117
128.5
140
151.5
176
187.5
199
7.0
7.37
7.98
8.6
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86
92.1
104
111
123
135
147
159
185
197
209
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
), which should be equal to or greater than
RWM
T
V
C
Volts Amps
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
137
146
162
177
193
209
243
259
275
I
PP
65.2
58.3
53.6
50.0
46.5
44.1
41.7
39.0
35.3
33.0
30.2
27.9
25.8
24.0
23.1
21.7
20.5
18.5
16.9
15.4
14.2
13.2
12.4
11.3
10.3
9.3
8.6
8.3
7.7
7.3
6.9
6.4
6.2
5.8
5.3
4.9
4.4
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.2
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Page 4
1SMB5.0AT3 Series
100
10
, PEAK POWER (kW)
1
PK
P
0.1
0.1 ms1 ms10 ms 100 ms
tP, PULSE WIDTH
Figure 1. Pulse Rating Curve
160
140
= 25 C°
A
120
100
80
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
1 ms 10 ms
PULSE WIDTH (tP) IS DEFINED AS
tr≤ 10 ms
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF IPP.
100
PEAK VALUE − I
VALUE (%)
50
t
P
0
01234
PP
HALF VALUE −
I
PP
2
t, TIME (ms)
Figure 2. Pulse Waveform
10,000
MEASURED @
1000
ZERO BIAS
60
40
PEAK PULSE DERATING IN % OF
20
PEAK POWER OR CURRENT @ T
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Pulse Derating Curve
Z
in
V
in
Figure 3. Typical Protection Circuit
MEASURED @ V
RWM
100
C, CAPACITANCE (pF)
10
0.1 1 10 100 1000
VBR, BREAKDOWN VOLTAGE (VOLTS)
Figure 5. Capacitance versus Breakdown
Voltage
LOAD
V
L
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Page 5
1SMB5.0AT3 Series
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 6.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 7. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1.0 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 8. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 8 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 8 is multiplied by the peak power
value of Figure 1 for the same pulse, the results follow the
expected trend.
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5
Page 6
1SMB5.0AT3 Series
V
V
in
t
d
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
Vin (TRANSIENT)
V
Figure 6. Figure 7.
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
DERATING FACTOR
0.03
0.02
0.01
0.1 0.2 0.5 2 5 10 501 20 100
Figure 8. Typical Derating Factor for Duty Cycle
OVERSHOOT DUE TO
V
INDUCTIVE EFFECTS
L
t t
PULSE WIDTH
10 ms
1 ms
100 ms
10 ms
D, DUTY CYCLE (%)
Vin (TRANSIENT)
V
L
UL RECOGNITION
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
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including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
6
Page 7
1SMB5.0AT3 Series
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE E
H
E
E
b
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
DIMAMIN NOM MAX MIN
A1 0.05 0.10 0.15 0.002
b 1.96 2.03 2.11 0.077
c 0.15 0.23 0.30 0.006
D 3.30 3.56 3.81 0.130
D
E 4.06 4.32 4.57 0.160
H
E
L 0.76 1.02 1.27 0.030
L1
MILLIMETERS
1.90 2.13 2.41 0.075
5.21 5.44 5.59 0.205 0.214 0.220
0.51 REF
INCHES
NOM MAX
0.084 0.095
0.004 0.006
0.080 0.083
0.009 0.012
0.140 0.150
0.170 0.180
0.040 0.050
0.020 REF
A
L
L1
c
A1
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
mm
ǒ
SCALE 8:1
inches
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SURMETIC is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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1SMB5.0AT3/D
7
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