Datasheet 1SMB5.0AT3 Datasheet (ON Semiconductor)

Page 1

1SMB5.0AT3 Series

600 Watt Peak Power Zener Transient Voltage Suppressors

Unidirectional*

The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetict package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications.

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PLASTIC SURFACE MOUNT

ZENER OVERVOLTAGE

TRANSIENT SUPPRESSORS

5.0 V − 170 V,

600 W PEAK POWER

Features

• Working Peak Reverse Voltage Range − 5.0 V to 170 V

• Standard Zener Breakdown Voltage Range − 6.7 V to 199 V

• Peak Power − 600 W @ 1.0 ms

• ESD Rating of Class 3 (>16 kV) per Human Body Model

• Maximum Clamp Voltage @ Peak Pulse Current

• Low Leakage < 5.0 mA Above 10 V

• UL 497B for Isolated Loop Circuit Protection

• Response Time is Typically < 1.0 ns

• Pb−Free Packages are Available

Mechanical Characteristics

Void-free, transfer-molded, thermosetting plastic

CASE: FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

LEADS: Modified L−Bend providing more contact area to bond pads POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any

Cathode Anode

SMB

CASE 403A

PLASTIC

MARKING DIAGRAM

AYWW

xx G

A = Assembly Location Y = Year WW = Work Week xx = Device Code (Refer to page 3) G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

1SMBxxxAT3 SMB 2500/Tape & Reel 1SMBxxxAT3G SMB

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

2500/Tape & Reel

†

February, 2007 − Rev. 10

DEVICE MARKING INFORMATION

See specific marking information in the device marking column of the Electrical Characteristics table on page 3 o this data sheet.

1 Publication Order Number:

1SMB5.0AT3/D

Page 2

1SMB5.0AT3 Series

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms P DC Power Dissipation @ TL = 75°C

Measured Zero Lead Length (Note 2) Derate Above 75°C

Thermal Resistance from Junction−to−Lead DC Power Dissipation (Note 3) @ TA = 25°C

Derate Above 25°C

Thermal Resistance from Junction−to−Ambient Forward Surge Current (Note 4) @ TA = 25°C I Operating and Storage Temperature Range TJ, T

FSM

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. 10 X 1000 ms, non−repetitive.

2. 1 in square copper pad, FR−4 board.

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

600 W

3.0

40 25

0.55

4.4

226

mW/°C

°C/W

mW/°C

°C/W

100 A

−65 to +150 °C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless

otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A)

Symbol Parameter

RWM

I I

Maximum Reverse Peak Pulse Current Clamping Voltage @ I

Working Peak Reverse Voltage Maximum Reverse Leakage Current @ V

Breakdown Voltage @ I

Test Current

Forward Current

Forward Voltage @ I

RWM

5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,

non−repetitive duty cycle.

VCV

RWM

Uni−Directional TVS

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Page 3

1SMB5.0AT3 Series

ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)

RWM

Device*

1SMB5.0AT3, G 1SMB6.0AT3, G

1SMB6.5AT3, G 1SMB7.0AT3, G

1SMB7.5AT3, G 1SMB8.0AT3, G 1SMB8.5AT3, G 1SMB9.0AT3, G

1SMB10AT3, G 1SMB11AT3, G 1SMB12AT3, G 1SMB13AT3, G

1SMB14AT3, G 1SMB15AT3, G 1SMB16AT3, G 1SMB17AT3, G

1SMB18AT3, G 1SMB20AT3, G

1SMB22AT3, G

1SMB24AT3, G 1SMB26AT3, G

1SMB28AT3, G 1SMB30AT3, G 1SMB33AT3, G

1SMB36AT3, G 1SMB40AT3, G 1SMB43AT3, G 1SMB45AT3, G

1SMB48AT3, G 1SMB51AT3, G 1SMB54AT3, G

1SMB58AT3, G

1SMB60AT3, G 1SMB64AT3, G 1SMB70AT3, G 1SMB75AT3, G

1SMB85AT3, G 1SMB90AT3, G 1SMB100AT3, G

1SMB110AT3, G 1SMB120AT3, G 1SMB130AT3, G 1SMB150AT3, G

1SMB160AT3, G 1SMB170AT3, G

Device

Marking

KE KG

KK KM

KP KR KT KV

KX KZ LE LG

LK LM LP LR

LT LV

ME MG MK MM

MP MR

MT MV

NK NM

PK PM

(Note 6)

5.0

6.0

6.5

7.0

7.5

8.0

8.5

9.0 10

11 12 13

14 15 16 17

18 20

24 26

28 30 33

36 40 43 45

48 51 54

60 64 70 75

85 90

100 110

120 130 150

160 170

@ V

RWM

800 800

500 500

100

50 10

5.0

55.0

5.0

6. A transient suppressor is normally selected according to the working peak reverse voltage (V the DC or continuous peak operating voltage level.

7. VBR measured at pulse test current IT at an ambient temperature of 25°C.

8. Surge current waveform per Figure 2 and derate per Figure 4 of the General Data − 600 W at the beginning of this group.

9. Bias Voltage = 0 V, F = 1 MHz, TJ = 25°C

†Please see 1SMB10CAT3 to 1SMB78CAT3 for Bidirectional devices. *The “G” suffix indicates Pb−Free package available.

Breakdown Voltage VC @ IPP (Note 8)

VBR (Note 7) Volts @ I

Min Nom Max mA

6.40

6.67

7.22

7.78

8.33

8.89

9.44

10.0

11.1

12.2

13.3

14.4

15.6

16.7

17.8

18.9

20.0

22.2

24.4

26.7

28.9

31.1

33.3

36.7

40.0

44.4

47.8

50.0

53.3

56.7

60.0

64.4

66.7

71.1

77.8

83.3

94.4 100

111

122 133 144 167

178 189

6.7

7.02

7.6

8.19

8.77

9.36

9.92

10.55

11.7

12.85 14

15.15

16.4

17.6

18.75

19.9

21.05

23.35

25.65

28.1

30.4

32.75

35.05

38.65

42.1

46.75

50.3

52.65

56.1

59.7

63.15

67.8

70.2

74.85

81.9

87.7

99.2

105.5

117

128.5

140

151.5

176

187.5

199

7.0

7.37

7.98

8.6

9.21

9.83

10.4

11.1

12.3

13.5

14.7

15.9

17.2

18.5

19.7

20.9

22.1

24.5

26.9

29.5

31.9

34.4

36.8

40.6

44.2

49.1

52.8

55.3

58.9

62.7

66.3

71.2

73.7

78.6 86

92.1

104 111 123

135 147 159 185

197 209

10 10

1.0

RWM

), which should be equal to or greater than

V A pF

9.2

10.3

11.2

12.0

12.9

13.6

14.4

15.4

17.0

18.2

19.9

21.5

23.2

24.4

26.0

27.6

29.2

32.4

35.5

38.9

42.1

45.4

48.4

53.3

58.1

64.5

69.4

72.7

77.4

82.4

87.1

93.6

96.8 103

113

121 137

146 162

177 193 209 243

259 275

65.2

58.3

53.6

50.0

46.5

44.1

41.7

39.0

35.3

33.0

30.2

27.9

25.8

24.0

23.1

21.7

20.5

18.5

16.9

15.4

14.2

13.2

12.4

11.3

10.3

9.3

8.6

8.3

7.7

7.3

6.9

6.4

6.2

5.8

5.3

4.9

4.4

4.1

3.7

3.4

3.1

2.9

2.5

2.3

2.2

typ

(Note 9)

2700 2300

2140 2005

1890 1780 1690 1605

1460 1345 1245 1160

1085 1020

965 915

870 790

730

675 630

590 555 510

470 430 400 385

365 345 330

310

300 280 260 245

220 210 190

175 160 150 135

125 120

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Page 4

1SMB5.0AT3 Series

, PEAK POWER (kW)

100

0.1

= 25 C°

0.1 ms1 ms10 ms 100 ms

tP, PULSE WIDTH

Figure 1. Pulse Rating Curve

160

140

120

100

NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 2

1 ms 10 ms

PULSE WIDTH (tP) IS DEFINED AS

tr≤ 10 ms

100

VALUE (%)

PEAK VALUE − I

01 2 34

THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP.

HALF VALUE −

t, TIME (ms)

Figure 2. Pulse Waveform

10,000

1000

1SMB5.0AT3G

1SMB10AT3G

TJ = 25°C f = 1 MHz

PEAK PULSE DERATING IN % OF

PEAK POWER OR CURRENT @ T

0 25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (°C)

Figure 3. Pulse Derating Curve

Figure 5. Typical Protection Circuit

100

C, CAPACITANCE (pF)

1 10 100 100

BIAS VOLTAGE (VOLTS)

1SMB48AT3G

1SMB170AT3G

Figure 4. Typical Junction Capacitance vs.

Bias Voltage

LOAD

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Page 5

1SMB5.0AT3 Series

APPLICATION NOTES

RESPONSE TIME

In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 6.

The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 7. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMB series have a very good response time, typically < 1.0 ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout,

minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot.

Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation.

DUTY CYCLE DERATING

The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 8. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose.

At first glance the derating curves of Figure 8 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 ms pulse. However, when the derating factor for a given pulse of Figure 8 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend.

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Page 6

1SMB5.0AT3 Series

tD = TIME DELAY DUE TO CAPACITIVE EFFECT

Vin (TRANSIENT)

Figure 6. Figure 7.

0.7

0.5

0.3

0.2

0.1

0.07

0.05

DERATING FACTOR

0.03

0.02

0.01

0.1 0.2 0.5 2 5 10 501 20 100

Figure 8. Typical Derating Factor for Duty Cycle

OVERSHOOT DUE TO

INDUCTIVE EFFECTS

t t

PULSE WIDTH

10 ms

1 ms

100 ms

10 ms

D, DUTY CYCLE (%)

Vin (TRANSIENT)

UL RECOGNITION

The entire series has Underwriters Laboratory

Recognition for the classification of protectors (QVGV2)

under the UL standard for safety 497B and File #E210057. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests

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including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more.

Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category.

Page 7

1SMB5.0AT3 Series

PACKAGE DIMENSIONS

SMB

CASE 403A−03

ISSUE F

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.

DIMAMIN NOM MAX MIN

A1 0.05 0.10 0.20 0.002

b 1.96 2.03 2.20 0.077 c 0.15 0.23 0.31 0.006

D 3.30 3.56 3.95 0.130

D E 4.06 4.32 4.60 0.160

L 0.76 1.02 1.60 0.030

MILLIMETERS

1.90 2.13 2.45 0.075

5.21 5.44 5.60 0.205 0.214 0.220

0.51 REF

INCHES

NOM MAX

0.084 0.096

0.004 0.008

0.080 0.087

0.009 0.012

0.140 0.156

0.170 0.181

0.040 0.063

0.020 REF

SOLDERING FOOTPRINT*

2.743

0.108

2.159

0.085

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

SURMETIC is a trademark of Semiconductor Components Industries, LLC.

2.261

0.089

SCALE 8:1

inches

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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1SMB5.0AT3/D

Datasheet 1SMB5.0AT3 Datasheet (ON Semiconductor)

Specifications and Main Features

Frequently Asked Questions

User Manual