Datasheet 1PS89SS06, 1PS89SS05, 1PS89SS04 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D425

1PS89SS04; 1PS89SS05;
1PS89SS06

High-speed double diodes

Preliminary specification
Supersedes data of 1999 Mar 01

1999 Jun 08

Philips Semiconductors Preliminary specification

High-speed double diodes

FEATURES

• Power dissipation comparable to
SOT23

• Ultra small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 80 V

• Repetitive peak reverse voltage:
max. 85 V

• Repetitive peak forward current:
max. 500 mA.

APPLICATIONS

• High speed switching in e.g.
surface mounted circuits.

DESCRIPTION

Two high-speed switching diodes in
planar technology, with different
configurations, in an ultra small
SC-89 (SOT490) plastic SMD
package.

PINNING

1PS89SS..

PIN

04 05 06

1a
2k

1
2

3k1,a2k1,k

page

12

Top view

Fig.1 Simplified outline

(SC-89; SOT490) and
pin configuration.

MARKING

TYPE NUMBER

1PS89SS04 S4
1PS89SS05 S5
1PS89SS06 S6

a

1

a

2

2

3

MBK837

MARKING

CODE

1PS89SS04; 1PS89SS05;

1PS89SS06

3

k

1

k

2

a1,a

2

Fig.2 1PS89SS04 diode

Fig.3 1PS89SS05 diode

Fig.4 1PS89SS06 diode

12

MGL550

configuration (symbol).

3

12

MGL551

configuration (symbol).

3

1

MGL552

configuration (symbol).

2

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode unless otherwise specified

V
V
I

RRM
R

F

repetitive peak reverse voltage − 85 V
continuous reverse voltage − 80 V
continuous forward current T

=25°C; note 1; see Fig.5

amb

single diode loaded − 200 mA
both diodes loaded − 125 mA

I

FRM

I

FSM

repetitive peak forward current − 500 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.7

t=1µs − 4A
t=1s − 0.5 A

1999 Jun 08 2

Philips Semiconductors Preliminary specification

High-speed double diodes

1PS89SS04; 1PS89SS05;

1PS89SS06

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

P

tot

T

stg

T

j

Note

1. Refer to SC-89 (SOT490) standard mounting conditions.

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Per diode

V

F

I

R

C

d

t

rr

V

fr

total power dissipation (per package) T

≤ 25 °C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − +150 °C

forward voltage see Fig.6

I

= 1 mA 610 − mV

F

= 10 mA 740 − mV

I

F

I

=50mA − 1V

F

I

= 100 mA − 1.2 V

F

reverse current see Fig.8

V

=25V − 30 nA

R

=80V − 0.5 µA

V

R

V

= 25 V; Tj= 150 °C − 30 µA

R

V

= 80 V; Tj= 150 °C − 100 µA

R

diode capacitance f = 1 MHz; VR= 0; see Fig.9

1PS89SS04 − 1.5 pF
1PS89SS05 − 1.5 pF
1PS89SS06 − 2pF

reverse recovery time switched from IF= 10 mA to IR=10mA;

− 4ns
RL= 100 Ω; measured at IR= 1 mA;
see Fig.10

forward recovery voltage switched to IF= 10 mA; tr=20ns;

− 1.75 V
see Fig.11

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point both diodes loaded

1PS89SS04 55 K/W
1PS89SS05 70 K/W
1PS89SS06 70 K/W

R

th j-a

thermal resistance from junction to ambient note 1 500 K/W

Note

1. Refer to SC-89 (SOT490) standard mounting conditions.

1999 Jun 08 3

Philips Semiconductors Preliminary specification

High-speed double diodes

GRAPHICAL DATA

150

T

amb

MGL553

(°C)

300

handbook, halfpage

I

F

(mA)

(1)

200

(2)

100

0

050

(1) One diode loaded.
(2) Both diodes loaded.

100 200

Fig.5 Maximum permissible continuous forward

current as a function of the ambient
temperature.

1PS89SS04; 1PS89SS05;

1PS89SS06

300

handbook, halfpage

I

F

(mA)

200

100

0

02

(1) Tj= 150°C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.

(1) (3)(2)

1

Fig.6 Forward current as a function of forward

voltage.

MBG382

VF (V)

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents.
Tj=25°C prior to surge.

Fig.7 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

MBG704

10

2

10

3

10

tp (µs)

4

10

1999 Jun 08 4

Philips Semiconductors Preliminary specification

High-speed double diodes

5

10

handbook, halfpage

I

R

(nA)

4

10

3

10

max

2

10

typ

10

VR = 80 V

80 V

100

25 V

Tj (°C)

MBL045

1PS89SS04; 1PS89SS05;

1PS89SS06

2.0

handbook, halfpage

C

d

(pF)

1.5

1.0

0.5

2000

0

05

f = 1 MHz; Tj=25°C.
(1) 1PS89SS06.
(2) 1PS89SS04 and 1PS89SS05.

(1)

(2)

10

15 20

MGL554

25

VR (V)

Fig.8 Reverse current as a function of junction

temperature.

Fig.9 Diode capacitance as a function of reverse

voltage; typical values.

1999 Jun 08 5

Philips Semiconductors Preliminary specification

High-speed double diodes

handbook, full pagewidth

D.U.T.

R = 50SΩ

V = V I x R

RF S

I

F

SAMPLING

OSCILLOSCOPE

R = 50iΩ

MGA881

1PS89SS04; 1PS89SS05;

1PS89SS06

t

r

10%

V

R

90%

input signal

t

p

t

I

F

t

rr

t

(1)

output signal

(1) IR= 1 mA.
Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty factor δ = 0.05;

Oscilloscope: rise time t

= 0.35 ns.

r

Fig.10 Reverse recovery voltage test circuit and waveforms.

I

R = 50SΩ

Ω1 k Ω450

D.U.T.

OSCILLOSCOPE

R = 50iΩ

MGA882

I

10%

t

r

90%

t

p

input
signal

V

V

fr

t

t

output

signal

Input signal: forward pulse rise time tr= 20 ns; forward current pulse duration tp≥ 100 ns; duty factor δ≤0.005.

Fig.11 Forward recovery voltage test circuit and waveforms.

1999 Jun 08 6

Philips Semiconductors Preliminary specification

High-speed double diodes

1PS89SS04; 1PS89SS05;

1PS89SS06

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT490

D

3

E

H

E

AB

X

v M

A

12

e

b

1

p

e

0 1 2 mm

DIMENSIONS (mm are the original dimensions)

UNIT b

A

0.8

0.6

0.33

0.23

mm

OUTLINE
VERSION

SOT490 SC-89

cD

p

0.2

1.7

1.5

0.95

0.75

0.1

IEC JEDEC EIAJ

e

E

1.0

REFERENCES

e

0.5

1

w M

B

H

1.7

1.5

scale

E

L

0.5

0.3

A

c

L

p

detail X

0.1

wv

0.1

EUROPEAN

PROJECTION

ISSUE DATE

98-10-23

p

1999 Jun 08 7

Philips Semiconductors Preliminary specification

High-speed double diodes

1PS89SS04; 1PS89SS05;

1PS89SS06

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Jun 08 8

Philips Semiconductors Preliminary specification

High-speed double diodes

1PS89SS04; 1PS89SS05;

1PS89SS06

NOTES

1999 Jun 08 9

Philips Semiconductors Preliminary specification

High-speed double diodes

1PS89SS04; 1PS89SS05;

1PS89SS06

NOTES

1999 Jun 08 10

Philips Semiconductors Preliminary specification

High-speed double diodes

1PS89SS04; 1PS89SS05;

1PS89SS06

NOTES

1999 Jun 08 11

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