Datasheet 1PS76SB17 Datasheet (Philips) [en, ca]

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
halfpage
1PS76SB17
Schottky barrier diode
Preliminary specification Supersedes data of 1996 Oct 14
1999 May 25
Page 2
Philips Semiconductors Preliminary specification
Schottky barrier diode 1PS76SB17
FEATURES
• Low forward voltage
• Low diode capacitance
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD323 very small plastic SMD package.
• ESD > 500 V; Human body model
• Very small plastic SMD package.
handbook, 4 columns
ka
APPLICATIONS
• UHF mixers
• Sampling circuits
• Modulators
• Phase detectors.
Marking code: S7. The marking bar indicates the cathode.
MAM283
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage continuous forward current −
storage temperature junction temperature
−
−65
−
4V 30 mA +150 °C 100 °C
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
I
R
C
d
forward voltage see Fig.2
= 0.1 mA
I
F
I
= 1mA
F
I
=10mA
F
reverse current VR= 3 V; see Fig.3 diode capacitance f = 1 MHz; VR= 0 V; see Fig.4
f = 1 MHz; V
= 0.5 V; see Fig.4
R
− 300 mV 360 450 mV 470 600 mV
0.15 0.25
µA
0.8 1 pF
0.65 − pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 450 K/W
Note
1. Refer to SOD323 standard mounting conditions.
1999 May 25 2
Page 3
Philips Semiconductors Preliminary specification
Schottky barrier diode 1PS76SB17
GRAPHICAL DATA
2
10
handbook, halfpage
I
F
(mA)
MLC795
10
(1) (2) (3)
(4)
600 800400200
VF (mV)
(1) T (2) T (3) T (4) T
10
10
1
−1
−2
amb amb amb amb
0
= 100°C. =60°C. =25°C. = −40 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
4
10
handbook, halfpage
I
R
MLC796
(nA)
3
10
2
10
(1)
(2) (3)
10
(4)
213
V (V)
R
(1) T (2) T (3) T (4) T
10
1
1
amb amb amb amb
0
= 100 °C. =60°C. =25°C. = −40 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
0.8
handbook, halfpage
C
d
MLC797
(pF)
0.7
0.6
0.5
0.4 01234
f = 1 MHz; T
amb
=25°C.
V (V)
R
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
1999 May 25 3
Page 4
Philips Semiconductors Preliminary specification
Schottky barrier diode 1PS76SB17
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
A
A
1
12
b
E
p
c
L
p
H
E
D
A
v M
SOD323
Q
A
(1)
0 1 2 mm
DIMENSIONS (mm are the original dimensions)
A
UNIT b
1.1
mm
0.8
Note
1. The marking bar indicates the cathode.
OUTLINE VERSION
SOD323 98-09-14
1
A
max.
0.40
+ 0.05
0.25
− 0.05
cD
p
0.25
1.8
0.10
1.6
IEC JEDEC EIAJ
H
E
1.35
2.7
1.15
2.3
REFERENCES
L
E
p
0.45
0.15
1999 May 25 4
scale
Qv
0.25
0.15
0.2
EUROPEAN
PROJECTION
ISSUE DATE
Page 5
Philips Semiconductors Preliminary specification
Schottky barrier diode 1PS76SB17
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 May 25 5
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Philips Semiconductors Preliminary specification
Schottky barrier diode 1PS76SB17
NOTES
1999 May 25 6
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Philips Semiconductors Preliminary specification
Schottky barrier diode 1PS76SB17
NOTES
1999 May 25 7
Page 8
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Printed in The Netherlands 115002/02/pp8 Date of release: 1999 May 25 Document order number: 9397 75005893
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