Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D102
1PS70SB40 series
Schottky barrier (double) diodes
Product specification
Supersedes data of 1997 Oct 28
1999 Apr 26
Page 2
Philips Semiconductors Product specification
Schottky barrier (double) diodes 1PS70SB40 series
FEATURES
• Low forward voltage
• Guard ring protected
• Very small SMD package
• Low diode capacitance.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in an SC-70 very small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
MARKING
PINNING
1PS70SB..
PIN
40 44 45 46
1a
2 n.c. k
a1a1k
1
a
2
2
3k1k1,a2k1,k2a1,a
alfpage
Top view
3
1
2
MGD765
Fig.1 Simplified outline
(SC-70) and pin
configuration.
1
k
2
3
12
MLC358
2
Fig.3 1PS70SB44 diode
configuration (symbol).
3
12
MLC359
Fig.4 1PS70SB45 diode
configuration (symbol).
TYPE NUMBER
MARKING
CODE
1PS70SB40 6∗3
1PS70SB44 6∗4
1PS70SB45 6∗5
1PS70SB46 6∗6
Note
1. ∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
(1)
3
12
n.c.
MLC357
Fig.2 1PS70SB40 single
diode configuration
(symbol).
3
12
MLC360
Fig.5 1PS70SB46 diode
configuration (symbol).
1999 Apr 26 2
Page 3
Philips Semiconductors Product specification
Schottky barrier (double) diodes 1PS70SB40 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
continuous reverse voltage − 40 V
continuous forward current − 120 mA
repetitive peak forward current tp≤ 1s; δ≤0.5 − 120 mA
non-repetitive peak forward current tp<10ms − 200 mA
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
I
R
τ charge carrier life time I
C
d
continuous forward voltage see Fig.6
I
= 1 mA 380 mV
F
I
= 10 mA 500 mV
F
I
=40mA 1 V
F
continuous reverse current VR= 30 V; note 1; see Fig.7 1 µA
V
= 40 V; note 1; see Fig.7 10 µA
R
= 5 mA; Krakauer method 100 ps
F
diode capacitance VR= 0; f = 1 MHz; see Fig.9 5 pF
Note
1. Pulse test: t
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
Note
1. Refer to SC70 standard mounting conditions.
1999 Apr 26 3
Page 4
Philips Semiconductors Product specification
Schottky barrier (double) diodes 1PS70SB40 series
GRAPHICAL DATA
2
10
handbook, halfpage
I
F
MLC361 - 1
(mA)
10
0
= 150°C.
=85°C.
=25°C.
= −40 °C.
(1) (2) (3) (4)
0.6 0.80.40.2 1.0
V (V)
F
(1) T
(2) T
(3) T
(4) T
1
1
10
2
10
amb
amb
amb
amb
Fig.6 Forward current as a function of forward
voltage; typical values.
3
10
handbook, halfpage
I
R
(µA)
2
10
(1)
MLC362
10
(2)
1
−1
(1) T
(2) T
(3) T
10
10
−2
amb
amb
amb
0
= 150 °C.
=85°C.
=25°C.
(3)
2010 4030
VR (V)
Fig.7 Reverse current as a function of reverse
voltage; typical values.
3
10
handbook, halfpage
r
diff
MLC364
(Ω)
2
10
10
1
1
10
11010
I (mA)
F
f = 10 KHz.
Fig.8 Differential forward resistance as a function
of forward current; typical values.
2
MLC363
C
(pF)
5
d
handbook, halfpage
4
3
2
1
0
01020 4030
f = 1 MHz; T
amb
=25°C.
VR (V)
Fig.9 Diode capacitance as a function of reverse
voltage; typical values.
1999 Apr 26 4
Page 5
Philips Semiconductors Product specification
Schottky barrier (double) diodes 1PS70SB40 series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT323
D
y
3
A
12
e
b
1
p
e
w M
B
E
H
E
A
1
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max
0.1
1
b
cD
p
0.4
0.25
0.10
2.2
1.8
0.3
IEC JEDEC EIAJ
E
1.35
1.15
REFERENCES
1.3
e
e
1
0.65
UNIT
A
1.1
mm
0.8
OUTLINE
VERSION
SOT323 SC-70
1999 Apr 26 5
H
E
2.2
2.0
L
Qwv
p
0.45
0.23
0.15
0.13
0.20.2
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Page 6
Philips Semiconductors Product specification
Schottky barrier (double) diodes 1PS70SB40 series
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 26 6
Page 7
Philips Semiconductors Product specification
Schottky barrier (double) diodes 1PS70SB40 series
NOTES
1999 Apr 26 7
Page 8
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 26 Document order number: 9397 750 05792
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