Datasheet 1PS301 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

k, halfpage

M3D187

1PS301

High-speed double diode

Product specification
Supersedes data of 1996 Oct 04

1999 May 06

Philips Semiconductors Product specification

High-speed double diode 1PS301

FEATURES

• Very small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 80 V

• Repetitive peak reverse voltage:
max. 85 V

• Repetitive peak forward current:
max. 500 mA.

APPLICATIONS

• High-speed switching in e.g.
surface mounted circuits.

DESCRIPTION

The 1PS301 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the very small rectangular plastic
SMD SC70-3 package.

21

3

Top view

Marking code: B3.

Fig.1 Simplified outline (SOT323; SC70-3) and symbol.

PINNING

PIN DESCRIPTION

1 anode (a1)
2 anode (a2)
3 common cathode

21

3

MAM084

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

V

RRM

repetitive peak reverse

− 85 V

voltage

V

R

I

F

continuous reverse voltage − 80 V
continuous forward current single diode loaded; note 1; see Fig.2 − 250 mA

double diode loaded; note 1; see Fig.2 − 160 mA

I

FRM

I

FSM

repetitive peak forward current − 500 mA
non-repetitive peak forward

current

square wave; Tj=25°C prior to surge

t=1µs − 4A
t=1s − 0.5 A

P

tot

T

stg

T

j

total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C

=25°C; note 1 − 300 mW

amb

Note

1. Device mounted on an FR4 printed-circuit board.

1999 May 06 2

Philips Semiconductors Product specification

High-speed double diode 1PS301

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Per diode

V

F

I

R

C

d

t

rr

V

fr

forward voltage see Fig.3

I

=1mA 610 − mV

F

=10mA 740 − mV

I

F

I

=50mA − 1.0 V

F

I

= 100 mA − 1.2 V

F

reverse current see Fig.4

V

=25V − 30 nA

R

V

=80V − 0.5 µA

R

=25V; Tj= 150 °C − 30 µA

V

R

V

=80V; Tj= 150 °C − 100 µA

R

diode capacitance f = 1 MHz; VR= 0; see Fig.5 − 1.5 pF
reverse recovery time when switched from IF= 10 mA to

− 4ns
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.6

forward recovery voltage when switched from IF= 10 mA;

− 1.75 V
tr= 20 ns; see Fig.7

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 200 K/W
thermal resistance from junction to ambient note 1 415 K/W

Note

1. Device mounted on an FR4 printed-circuit board.

1999 May 06 3

Philips Semiconductors Product specification

High-speed double diode 1PS301

GRAPHICAL DATA

amb

MBG444

(oC)

300

handbook, halfpage

I

F

(mA)

200

100

0

0 100 200

Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.

(1)

(2)

T

Fig.2 Maximum permissible continuous forward

current as a function of ambient
temperature.

300

handbook, halfpage

I

F

(mA)

200

100

0

02

(1) Tj= 150°C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.

(1) (3)(2)

1

MBG382

VF (V)

Fig.3 Forward current as a function of forward

voltage.

2

10

handbook, halfpage

I

R

(µA)

10

1

1

10

2

10

(1) VR= 80 V; maximum values.
(2) VR= 80 V; typical values.
(3) VR= 25 V; typical values.

(1) (2) (3)

0

100

Tj (

MBG380

o

C)

Fig.4 Reverse current as a function of junction

temperature.

200

0.8

handbook, halfpage

C

d

(pF)

0.6

0.4

0.2

0

0816124

f = 1 MHz; Tj=25°C.

MBG446

VR (V)

Fig.5 Diode capacitance as a function of reverse

voltage; typical values.

1999 May 06 4

Philips Semiconductors Product specification

High-speed double diode 1PS301

handbook, full pagewidth

R = 50SΩ

V = V I x R

RF S

(1) IR= 1 mA.

I

F

D.U.T.

SAMPLING

OSCILLOSCOPE

R = 50iΩ

MGA881

t

r

10%

V

R

90%

t

p

input signal

Fig.6 Reverse recovery voltage test circuit and waveforms.

t

I

F

t

rr

t

(1)

output signal

I

R = 50SΩ

Ω1 k Ω450

D.U.T.

I

OSCILLOSCOPE

R = 50iΩ

MGA882

Fig.7 Forward recovery voltage test circuit and waveforms.

1999 May 06 5

10%

t

r

90%

t

p

input

signal

V

V

fr

t

t

output

signal

Philips Semiconductors Product specification

High-speed double diode 1PS301

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT323

D

y

3

A

12

e

b

1

p

e

w M

B

E

H

E

A

1

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

max

0.1

1

b

cD

p

0.4

0.25

0.10

2.2

1.8

0.3

IEC JEDEC EIAJ

E

1.35

1.15

REFERENCES

1.3

e

e

1

0.65

UNIT

A

1.1

mm

0.8

OUTLINE
VERSION

SOT323 SC-70

1999 May 06 6

H

E

2.2

2.0

L

p

0.45

0.15

Qwv

0.23

0.13

0.20.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

High-speed double diode 1PS301

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 May 06 7

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1999 64

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Printed in The Netherlands 115002/00/04/pp8 Date of release: 1999May 06 Document order number: 9397 750 05897