Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
halfpage
M3D050
1N821 to 1N829
1N821A to 1N829A
Voltage reference diodes
Product specification
Supersedes data of March 1991
1996 Mar 20
Page 2
Philips Semiconductors Product specification
Voltage reference diodes
1N821 to 1N829
1N821A to 1N829A
FEATURES
• Temperature compensated
• Reference voltage range:
5.89 to 6.51 V (typ. 6.20 V)
• Low temperature coefficient range:
max. 0.0005 to 0.01 %/K.
APPLICATION
• Voltage reference sources in
measuring instruments such as
digital voltmeters.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
Z
P
tot
T
stg
T
j
T
amb
working current − 50 mA
total power dissipation T
storage temperature −65 +200 °C
junction temperature − 200 °C
operating ambient temperature −55 +100 °C
DESCRIPTION
Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass
package.
handbook, halfpage
k
a
MAM216
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
=50°C − 400 mW
amb
1996 Mar 20 2
Page 3
Philips Semiconductors Product specification
Voltage reference diodes
1N821 to 1N829
1N821A to 1N829A
ELECTRICAL CHARACTERISTICS
T
= 25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
ref
∆V
ref
S
temperature coefficient IZ= 7.5 mA: see Fig.3;
Z
r
dif
reference voltage IZ=7.5 mA 5.89 6.20 6.51 V
reference voltage excursion IZ=7.5 mA; test points for
T
: −55; +25; +75; +100 °C;
1N821; 1N821A −−96 mV
1N823; 1N823A −−48 mV
amb
see Fig.2; notes 1 and 2
1N825; 1N825A −−19 mV
1N827; 1N827A −−9mV
1N829; 1N829A −−5mV
1N821; 1N821A −−0.01 %/K
notes 1 and 2
1N823; 1N823A −−0.005 %/K
1N825; 1N825A −−0.002 %/K
1N827; 1N827A −−0.001 %/K
1N829; 1N829A −−0.0005 %/K
differential resistance IZ= 7.5 mA; see Fig.4
1N821 to 1N829 −−15 Ω
1N821A to 1N829A −−10 Ω
Notes
1. The quoted values of ∆V
differential resistance r
a) As the max. r
result in a ∆V
of the device can be 15 Ω, a change of 0.01 mA in the current through the reference diode will
dif
of 0.01 mA × 15 Ω = 0.15 mV. This level of ∆V
ref
it is however very significant on a 1N829 (∆V
are based on a constant current IZ. Two factors can cause ∆V
ref
and the temperature coefficient SZ.
dif
is not significant on a 1N821 (∆V
ref
< 5 mV).
ref
to change, namely the
ref
< 96 mV),
ref
b) The temperature coefficient of the reference voltage SZ is a function of IZ. Reference diodes are classified at the
specified test current and the SZ of the reference diode will be different at different levels of IZ. The absolute value
of IZ is important, however, the stability of IZ, once the level has been set, is far more significant. This applies
particularly to the 1N829. The effect of the stability of IZ on SZ is shown in Fig.3.
2. All reference diodes are characterized by the ‘box method’. This guarantees a maximum voltage excursion (∆V
over the specified temperature range, at the specified test current (I
points within the range. V
and lowest values must not exceed the maximum ∆V
a reference. It may be derived from:
is measured and recorded at each temperature specified. The ∆V
Z
given. Therefore the temperature coefficient is only given as
ref
V
–
S
Z
ref1Vref2
-------------------------------------T
–
amb2Tamb1
-------------------V
), verified by tests at indicated temperature
Z
between the highest
ref
100
%/K×=
ref nom
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 8 mm from the body 300 K/W
thermal resistance from junction to ambient lead length 10 mm 375 K/W
UNIT
ref
)
1996 Mar 20 3
Page 4
Philips Semiconductors Product specification
Voltage reference diodes
GRAPHICAL DATA
10
handbook, halfpage
I
Z
(mA)
7.5
5
(1) (3)(2)
2.5
-75
Referenced to IZ= 7.5mA.
(1) Tj= 100 °C.
(2) Tj=25°C.
(3) Tj= −55 °C.
-50 50
-25 0
∆V
ref(max)
1N821 to 1N829
1N821A to 1N829A
MBG534
(2)
(1)(3)
25
(mV)
0.002
handbook, halfpage
∆S
Z
(%/K)
0.001
0
−0.001
−0.002
−0.003
4
56789 1110
MBG536
IZ (mA)
Fig.2 Working current as a function of the
maximum reference voltage excursion.
3
10
handbook, halfpage
r
dif
(Ω)
2
10
(1)
(2)
10
1
1
(1) Tj= 100 °C.
(2) Tj=25°C.
(3) Tj= −55 °C.
(3)
10
IZ (mA)
MBG535
Fig.3 Temperature coefficient change as a
function of working current; typical values.
2
10
Fig.4 Differential resistance as a function of
working current; typical values.
1996 Mar 20 4
Page 5
Philips Semiconductors Product specification
Voltage reference diodes
PACKAGE OUTLINE
handbook, full pagewidth
1.6
max
Dimensions in mm.
The marking band indicates the cathode.
The diodes are type branded.
25.4 min 25.4 min
3.04
max
Fig.5 SOD68 (DO-34).
1N821 to 1N829
1N821A to 1N829A
0.55
max
MSA212 - 1
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Mar 20 5
Loading...