Datasheet 1n58xx, 1n5820 Datasheet

Page 1

1N5820, 1N5821, 1N5822

1N5820 and 1N5822 are Preferred Devices

Axial Lead Rectifiers

. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes.

• Extremely Low V

• Low Power Loss/High Efficiency

• Low Stored Charge, Majority Carrier Conduction

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.1 gram (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

220°C Max. for 10 Seconds, 1/16″ from case

• Shipped in plastic bags, 500 per bag

• Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to

the part number

• Polarity: Cathode indicated by Polarity Band

• Marking: 1N5820, 1N5821, 1N5822

MAXIMUM RATINGS

Please See the Table on the Following Page

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SCHOTTKY BARRIER

RECTIFIERS

3.0 AMPERES

20, 30, 40 VOLTS

AXIAL LEAD

CASE 267–03

STYLE 1

MARKING DIAGRAM

 Semiconductor Components Industries, LLC, 2000

October, 2000 – Rev. 3

1N582x

1N582x = Device Code x = 0, 1 or 2

ORDERING INFORMATION

Device Package Shipping

1N5820 Axial Lead 500 Units/Bag 1N5820RL Axial Lead 1500/Tape & Reel 1N5821 Axial Lead 500 Units/Bag 1N5821RL Axial Lead 1500/Tape & Reel 1N5822 Axial Lead 500 Units/Bag 1N5822RL Axial Lead 1500/Tape & Reel

Preferred devices are recommended choices for future use and best overall value.

1 Publication Order Number:

1N5820/D

Page 2

1N5820, 1N5821, 1N5822

MAXIMUM RATINGS

Rating Symbol 1N5820 1N5821 1N5822 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage Non–Repetitive Peak Reverse Voltage V RMS Reverse Voltage V Average Rectified Forward Current (Note 1.)

 0.2 V

R(equiv)

= 28°C/W, P.C. Board Mounting, see Note 5.)

R(dc)

, TL = 95°C

Ambient Temperature

Rated V

, P

R(dc)

= 28°C/W

F(AV)

= 0

Non–Repetitive Peak Surge Current

(Surge applied at rated load conditions, half wave, single phase

60 Hz, T

= 75°C)

Operating and Storage Junction Temperature Range

(Reverse Voltage applied) Peak Operating Junction Temperature (Forward Current applied) T

*THERMAL CHARACTERISTICS (Note 5.)

Characteristic

Thermal Resistance, Junction to Ambient R

*ELECTRICAL CHARACTERISTICS (T

Characteristic

Maximum Instantaneous Forward Voltage (Note 2.)

= 1.0 Amp)

= 3.0 Amp)

= 9.4 Amp)

Maximum Instantaneous Reverse Current

@ Rated dc Voltage (Note 2.)

= 25°C

= 100°C

1. Lead Temperature reference is cathode lead 1/32″ from case.

2. Pulse Test: Pulse Width = 300 µs, Duty Cycle =2.0%. *Indicates JEDEC Registered Data for 1N5820–22.

= 25°C unless otherwise noted) (Note 1.)

RRM

RWM

RSM

R(RMS)

FSM

TJ, T

J(pk)

stg

20 30 40 V

24 36 48 V 14 21 28 V

90 85 80 °C

80 (for one cycle) A

Symbol 1N5820 1N5821 1N5822 Unit

0.370

0.475

0.850

2.0 20

3.0

65 to +125 °C

150

°C

Symbol Max Unit

0.380

0.500

0.900

28 °C/W

0.390

0.525

0.950 mA

2.0 20

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Page 3

1N5820, 1N5821, 1N5822

NOTE 3. — DETERMINING MAXIMUM RATINGS

Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 V

. Proper derating may be

RWM

accomplished by use of equation (1).

where T

= T

A(max)

= Maximum allowable ambient temperature

A(max)

= Maximum allowable junction temperature

J(max)

 R

F(AV)

(1)

R(AV)

(125°C or the temperature at which thermal runaway occurs, whichever is lowest)

= Average forward power dissipation

F(AV)

= Average reverse power dissipation

R(AV)

= Junction–to–ambient thermal resistance

Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2).

TR = T

J(max)

 R

R(AV)

(2)

Substituting equation (2) into equation (1) yields:

Inspection of equations (2) and (3) reveals that T

A(max)

= TR  R

F(AV)

is the

(3)

ambient temperature at which thermal runaway occurs or where TJ = 125°C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115°C. The data of Figures 1, 2, and 3 is based upon dc conditions. For

use in common rectifier circuits, Table 1. indicates suggested factors for an equivalent dc voltage to use for conservative design, that is:

R(equiv)

= V

 F (4)

(FM)

The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes.

EXAMPLE: Find T

for 1N5821 operated in a

A(max)

12–volt dc supply using a bridge circuit with capacitive filter such that I Voltage = 10 V

Step 1. Find V

= 2.0 A (I

, R

(rms)

R(equiv).

V

= 1.0 A), I

F(AV)

= 40°C/W.

Read F = 0.65 from Table 1. ,

= (1.41) (10) (0.65) = 9.2 V.

R(equiv)

(FM)/I(AV)

= 10, Input

Step 2. Find TR from Figure 2. Read TR = 108°C

Step 3. Find P

F(AV) @

Step 4. Find T

@ VR = 9.2 V and R

from Figure 6. **Read P

(FM)

(AV)

A(max)

 10 and I

from equation (3). = 108  (0.85) (40) = 74°C.

F(AV)

= 40°C/W.

 1.0 A.

F(AV)

= 0.8 5 W

**Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of its lower forward voltage, and higher for the 1N5822. Variations will be similar for the MBR–prefix devices, using P

from Figure 6.

F(AV)

Table 1. Values for Factor F

Full Wave,

Circuit Half Wave Full Wave, Bridge

Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive

Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3

Square Wave 0.75 1.5 0.75 0.75 1.5 1.5

*Note that V

R(PK)

 2.0 V

. †Use line to center tap voltage for Vin.

in(PK)

Center Tapped*†

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Page 4

1N5820, 1N5821, 1N5822

125

115

105

, REFERENCE TEMPERATURE ( C)T

125

115

105

, REFERENCE TEMPERATURE ( C)

8.0

125

115

105

(°C/W) = 70



5.03.0 4.0 7.0 10 20

, REVERSE VOLTAGE (VOLTS)

152.0

Figure 1. Maximum Reference T emperature

1N5820

, REFERENCE TEMPERATURE ( C)

(°C/W) = 70



5.03.0 4.0 7.0 10 20

, REVERSE VOLTAGE (VOLTS)

Figure 2. Maximum Reference T emperature

1N5821

8.0

MAXIMUM TYPICAL

(°C/W) = 70



5.0 7.0 10 15 20 3/8 4/8 5/8 6/8 7/8 1.0

, REVERSE VOLTAGE (VOLTS)

304.0

, THERMAL RESISTANCE



JUNCTION-TO-LEAD ( C/W)°

5.0

2/840

1/80

BOTH LEADS TO HEAT SINK, EQUAL LENGTH

L, LEAD LENGTH (INCHES)

8.0

Figure 3. Maximum Reference T emperature

Figure 4. Steady–State Thermal Resistance

1N5822

1.0 The temperature of the lead should be measured using a ther mocouple placed on the lead as close as possible to the tie point.

0.5 The thermal mass connected to the tie point is normally large

0.3

enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once

0.2

0.1

(NORMALIZED)

0.05

0.03

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.01

steady-state conditions are achieved. Using the measured val ue of T

, the junction temperature may be determined by:

= TL + T

∆T ∆T

r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t

+ tp, etc.

= P

• R

= the increase in junction temperature above the lead temperature.

[D + (1 - D) • r(t

DUTY CYCLE = t PEAK POWER, Ppk, is peak of an

TIME

equivalent square power pulse.

+ tp) + r(tp) - r(t1)] where:

+ tp) = normalized value of transient thermal resistance at time

0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k t, TIME (ms)

Figure 5. Thermal Response

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LEAD LENGTH = 1/4″

p/t1

20 k

Page 5

1N5820, 1N5821, 1N5822

7.0

5.0

3.0

2.0

1.0

0.7

0.5

SINE WAVE

(FM)

 (ResistiveLoad)

(AV)

Capacitive Loads



5.0 10 20

SQUARE WAVE

0.3 T

≈ 125°C

, AVERAGE POWER DISSIPATION (WATTS)

F(AV)

0.2

0.1

0.2 0.3 0.5 2.0

, AVERAGE FORWARD CURRENT (AMP)

F(AV)

0.7 1.0 7.0 10

3.00.1

5.0

Figure 6. Forward Power Dissipation 1N5820–22

NOTE 4. – APPROXIMATE THERMAL CIRCUIT MODEL

A(A)

S(A)

L(A)

C(A)TJ

J(A)

J(K)

C(K)

L(K)

S(K)

A(K)

L(K)

Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify:

= Ambient Temperature TC = Case Temperature

TL = Lead Temperature TJ = Junction Temperature R

= Thermal Resistance, Heat Sink to Ambient

= Thermal Resistance, Lead to Heat Sink

= Thermal Resistance, Junction to Case

PD = Total Power Dissipation = PF + P

PF = Forward Power Dissipation PR = Reverse Power Dissipation (Subscripts (A) and (K) refer to anode and cathode sides, respectively.) Values for thermal resistance components are: R

= 42°C/W/in typically and 48°C/W/in maximum

= 10°C/W typically and 16°C/W maximum

The maximum lead temperature may be found as follows: TL = T

where

  T

J(max)

 TJL  R

· P

NOTE 5. — MOUNTING DATA

Data shown for thermal resistance junction–to–ambient (R for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured.

TYPICAL VALUES FOR R

Mounting

Method

1 2 3

Lead Length, L (in)

1/8 1/4 1/2 3/4

50 51 53 55 °C/W 58 59 61 63

IN STILL AIR

°C/W °C/W

Mounting Method 1

P.C. Board where available

copper surface is small.

)

Mounting Method 2

VECTOR PUSH-IN

TERMINALS T-28

Mounting Method 3

P.C. Board with 2–1/2″ x 2–1/2″

copper surface.

L = 1/2″

BOARD GROUND

PLANE

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Page 6

1N5820, 1N5821, 1N5822

7.0

5.0

3.0

2.0

1.0

0.7

0.5

, INSTANTANEOUS FORWARD CURRENT (AMP)

0.3

0.2

0.1

= 100°C

25°C

100

, PEAK HALF-WAVE CURRENT (AMP)

FSM

100

5.0

2.0

1.0

0.5

= 75°C

f = 60 Hz

1 CYCLE

SURGE APPLIED AT RATED LOAD CONDITIONS

7.0 102.0 3.0

5.0 1001.0

NUMBER OF CYCLES

20 30 50 70

Figure 8. Maximum Non–Repetitive Surge

Current

= 125°C

100°C

75°C

0.07

0.05

500

300

200

C, CAPACITANCE (pF)

100

1.0

1.2

0.40 0.2 0.6 0.8

, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

1.10.30.1 0.5 0.7 1.30.9

Figure 7. Typical Forward Voltage

1N5820

= 25°C

f = 1.0 MHz

1N5822

0.7 7.0 20 30

1.00.5

2.0 3.0 5.0 10

VR, REVERSE VOLTAGE (VOLTS)

Figure 10. Typical Capacitance

1N5821

0.2

I , REVERSE CURRENT (mA)

1.4

0.1

0.05

0.02

0.01

25°C

4.0 12 20 28 36

8.00

, REVERSE VOLTAGE (VOLTS)

24 32 40

Figure 9. Typical Reverse Current

NOTE 6. — HIGH FREQUENCY OPERATION

Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.)

1N5820 1N5821 1N5822

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Page 7

1N5820, 1N5821, 1N5822

PACKAGE DIMENSIONS

AXIAL LEAD

CASE 267–03

ISSUE G

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.370 0.380 9.40 9.65 B 0.190 0.210 4.83 5.33 D 0.048 0.052 1.22 1.32 K 1.000 --- 25.40 ---

STYLE 1:

PIN 1. CATHODE (POLARITY BAND)

2. ANODE

MILLIMETERSINCHES

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Page 8

1N5820, 1N5821, 1N5822

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

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