Datasheet 1N 5386BG ONS Datasheet

5 Watt Surmetic
40 Zener Voltage Regulators

1N53 Series

This is a complete series of 5 Watt Zener diodes with tight limits and
better operating characteristics that reflect the superior capabilities of
silicon−oxide passivated junctions. All this in an axial lead,
transfer−molded plastic package that offers protection in all common
environmental conditions.

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Features

• Zener Voltage Range − 3.3 V to 200 V

• ESD Rating of Class 3 (>16 kV) per Human Body Model

• Surge Rating of up to 180 W @ 8.3 ms

• Maximum Limits Guaranteed on up to Six Electrical Parameters

• Pb−Free Packages are Available*

Mechanical Characteristics
CASE:

Void free, transfer−molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

260°C, 1/16 in. from the case for 10 seconds

POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any

MAXIMUM RATINGS

Rating Symbol Value Unit

Max. Steady State Power Dissipation

= 25°C, Lead Length = 3/8 in

@ T

L

Derate above 25°C

Junction−to−Lead Thermal Resistance

Operating and Storage

Temperature Range

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

1. Max operating temperature for DC conditions is 150°C, but not to exceed

200°C for pulsed conditions with low duty cycle or non−repetitive.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

P

q

TJ, T

D

JL

stg

5

40

25

−65 to +200
(Note 1)

W

mW/°C

°C/W

°C

Cathode Anode

AXIAL LEAD

CASE 017AA

PLASTIC

MARKING DIAGRAM

A

1N

53xxB

YYWWG

G

A = Assembly Location
1N53xxB = Device Number

YY = Year
WW = Work Week
G =Pb−Free Package

(Note: Microdot may be in either location)

(Refer to Tables on Pages 3 & 4)

ORDERING INFORMATION

Device Package Shipping

1N53xxB, G Axial Lead

(Pb−Free)

1N53xxBRL, G Axial Lead

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

1000 Units/Box

4000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2013

December, 2019 − Rev. 16

1 Publication Order Number:

1N5333B/D

1N53 Series

ELECTRICAL CHARACTERISTICS (T

otherwise noted, V

Symbol

V

Z

I

ZT

Z

ZT

I

ZK

Z

ZK

I

R

V

R

I

F

V

F

I

R

DV

Z

I

ZM

= 1.2 V Max @ IF = 1.0 A for all types)

F

Parameter

Reverse Zener Voltage @ I

Reverse Current

Maximum Zener Impedance @ I

Reverse Current

Maximum Zener Impedance @ I

Reverse Leakage Current @ V

Breakdown Voltage

Forward Current

Forward Voltage @ I

F

Maximum Surge Current @ TA = 25°C

Reverse Zener Voltage Change

Maximum DC Zener Current

ELECTRICAL CHARACTERISTICS (T

= 25°C unless

A

ZT

ZT

ZK

R

VRV

Z

I

I

F

I

R

I

ZT

Zener Voltage Regulator

= 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)

A

V

V

F

Leakage

Current

IR @ V

mA Max

I

R

(Note 4)

R

DV

(Note 5)

Z

I

ZM

(Note 6)

Volts A Volts mA

Device

(Note 2)

Zener Voltage (Note 3) Zener Impedance (Note 3)

†

Device

Marking

VZ (Volts) @ IZTZZT @ IZTZZK @ IZKI

Min Nom Max mA

W W

ZK

mA

1N5333B 1N5333B 3.14 3.3 3.47 380 3 400 1 300 1 20 0.85 1440

1N5334B 1N5334B 3.42 3.6 3.78 350 2.5 500 1 150 1 18.7 0.8 1320
1N5335B 1N5335B 3.71 3.9 4.10 320 2 500 1 50 1 17.6 0.54 1220
1N5336B 1N5336B 4.09 4.3 4.52 290 2 500 1 10 1 16.4 0.49 1100

1N5337B 1N5337B 4.47 4.7 4.94 260 2 450 1 5 1 15.3 0.44 1010

1N5338B 1N5338B 4.85 5.1 5.36 240 1.5 400 1 1 1 14.4 0.39 930
1N5339B 1N5339B 5.32 5.6 5.88 220 1 400 1 1 2 13.4 0.25 865

1N5340B 1N5340B 5.70 6.0 6.30 200 1 300 1 1 3 12.7 0.19 790

1N5341B 1N5341B 5.89 6.2 6.51 200 1 200 1 1 3 12.4 0.1 765
1N5342B 1N5342B 6.46 6.8 7.14 175 1 200 1 10 5.2 11.5 0.15 700

1N5343B 1N5343B 7.13 7.5 7.88 175 1.5 200 1 10 5.7 10.7 0.15 630
1N5344B 1N5344B 7.79 8.2 8.61 150 1.5 200 1 10 6.2 10 0.2 580
1N5345B 1N5345B 8.27 8.7 9.14 150 2 200 1 10 6.6 9.5 0.2 545
1N5346B 1N5346B 8.65 9.1 9.56 150 2 150 1 7.5 6.9 9.2 0.22 520

1N5347B 1N5347B 9.50 10 10.5 125 2 125 1 5 7.6 8.6 0.22 475

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.

2. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of ±5%.

3. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK): Test conditions for zener voltage and impedance are as follows: IZ is applied

40 ±10 ms prior to reading. Mounting contacts are located 3/8″ to 1/2″ from the inside edge of mounting clips to the body of the diode

= 25°C +8°C, −2°C).

(T

A

4. SURGE CURRENT (I
PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between

): Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width,

R

1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in
Figure 6. Mounting contact located as specified in Note 2 (T

5. VOLTAGE REGULATION (DV

max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting

of the I

Z

contact located as specified in Note 2 (T

6. MAXIMUM REGULATOR CURRENT (I
it applies only to the B−suffix device. The actual I

= 25°C at 3/8″ maximum from the device body.

T

L

): The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50%

Z

= 25°C +8°C, −2°C).

A

): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,

ZM

for any device may not exceed the value of 5 watts divided by the actual VZ of the device.

ZM

= 25°C +8°C, −2°C).

A

†The “G’’ suffix indicates Pb−Free package or Pb−Free packages are available.

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2

1N53 Series

ELECTRICAL CHARACTERISTICS (T

Zener Voltage (Note 8) Zener Impedance (Note 8)

Device

(Note 7)

†

Device

Marking

VZ (Volts) @ IZTZZT @ IZTZZK @ IZKI

Min Nom Max mA

= 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)

A

Leakage

W W

ZK

mA

Current

IR @ V

mA Max

R

Volts A Volts mA

I

(Note 9)

DV

Z

(Note

R

10)

(Note 11)

1N5348B 1N5348B 10.45 11 11.55 125 2.5 125 1 5 8.4 8.0 0.25 430

1N5349B 1N5349B 11.4 12 12.6 100 2.5 125 1 2 9.1 7.5 0.25 395
1N5350B 1N5350B 12.35 13 13.65 100 2.5 100 1 1 9.9 7.0 0.25 365

1N5351B 1N5351B 13.3 14 14.7 100 2.5 75 1 1 10.6 6.7 0.25 340

1N5352B 1N5352B 14.25 15 15.75 75 2.5 75 1 1 11.5 6.3 0.25 315

1N5353B 1N5353B 15.2 16 16.8 75 2.5 75 1 1 12.2 6.0 0.3 295

1N5354B 1N5354B 16.15 17 17.85 70 2.5 75 1 0.5 12.9 5.8 0.35 280
1N5355B 1N5355B 17.1 18 18.9 65 2.5 75 1 0.5 13.7 5.5 0.4 264
1N5356B 1N5356B 18.05 19 19.95 65 3 75 1 0.5 14.4 5.3 0.4 250
1N5357B 1N5357B 19 20 21 65 3 75 1 0.5 15.2 5.1 0.4 237

1N5358B 1N5358B 20.9 22 23.1 50 3.5 75 1 0.5 16.7 4.7 0.45 216
1N5359B 1N5359B 22.8 24 25.2 50 3.5 100 1 0.5 18.2 4.4 0.55 198

1N5360B 1N5360B 23.75 25 26.25 50 4 11 0 1 0.5 19 4.3 0.55 190

1N5361B 1N5361B 25.65 27 28.35 50 5 120 1 0.5 20.6 4.1 0.6 176

1N5362B 1N5362B 26.6 28 29.4 50 6 130 1 0.5 21.2 3.9 0.6 170

1N5363B 1N5363B 28.5 30 31.5 40 8 140 1 0.5 22.8 3.7 0.6 158
1N5364B 1N5364B 31.35 33 34.65 40 10 150 1 0.5 25.1 3.5 0.6 144

1N5365B 1N5365B 34.2 36 37.8 30 11 160 1 0.5 27.4 3.5 0.65 132

1N5366B 1N5366B 37.05 39 40.95 30 14 170 1 0.5 29.7 3.1 0.65 122
1N5367B 1N5367B 40.85 43 45.15 30 20 190 1 0.5 32.7 2.8 0.7 110

1N5368B 1N5368B 44.65 47 49.35 25 25 210 1 0.5 35.8 2.7 0.8 100

1N5369B 1N5369B 48.45 51 53.55 25 27 230 1 0.5 38.8 2.5 0.9 93
1N5370B 1N5370B 53.2 56 58.8 20 35 280 1 0.5 42.6 2.3 1.0 86
1N5371B 1N5371B 57 60 63 20 40 350 1 0.5 45.5 2.2 1.2 79
1N5372B 1N5372B 58.9 62 65.1 20 42 400 1 0.5 47.1 2.1 1.35 76

1N5373B 1N5373B 64.6 68 71.4 20 44 500 1 0.5 51.7 2.0 1.52 70
1N5374B 1N5374B 71.25 75 78.75 20 45 620 1 0.5 56 1.9 1.6 63
1N5375B 1N5375B 77.9 82 86.1 15 65 720 1 0.5 62.2 1.8 1.8 58
1N5377B 1N5377B 86.45 91 95.55 15 75 760 1 0.5 69.2 1.6 2.2 52.5

1N5378B 1N5378B 95 100 105 12 90 800 1 0.5 76 1.5 2.5 47.5
1N5380B 1N5380B 114 120 126 10 170 1150 1 0.5 91.2 1.3 2.5 39.5
1N5381B 1N5381B 123.5 130 136.5 10 190 1250 1 0.5 98.8 1.2 2.5 36.6

1N5383B 1N5383B 142.5 150 157.5 8 330 1500 1 0.5 11 4 1.1 3.0 31.6

1N5384B 1N5384B 152 160 168 8 350 1650 1 0.5 122 1.1 3.0 29.4
1N5386B 1N5386B 171 180 189 5 430 1750 1 0.5 137 1.0 4.0 26.4
1N5387B 1N5387B 180.5 190 199.5 5 450 1850 1 0.5 144 0.9 5.0 25
1N5388B 1N5388B 190 200 210 5 480 1850 1 0.5 152 0.9 5.0 23.6

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.

7. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of ±5%.

8. ZENER VOLTAGE (V
40 ±10 ms prior to reading. Mounting contacts are located 3/8″ to 1/2″ from the inside edge of mounting clips to the body of the diode

= 25°C +8°C, −2°C).

(T

A

9. SURGE CURRENT (I
PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between

) and IMPEDANCE (IZT and IZK): Test conditions for zener voltage and impedance are as follows: IZ is applied

Z

): Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width,

R

1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in
Figure 6. Mounting contact located as specified in Note 7 (T

10.VOLTAGE REGULATION (DV

max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting

of the I

Z

contact located as specified in Note 7 (T

11. MAXIMUM REGULATOR CURRENT (I
it applies only to the B−suffix device. The actual I

= 25°C at 3/8″ maximum from the device body.

T

L

): The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50%

Z

= 25°C +8°C, −2°C).

A

): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,

ZM

for any device may not exceed the value of 5 watts divided by the actual VZ of the device.

ZM

= 25°C +8°C, −2°C).

A

†The “G’’ suffix indicates Pb−Free package or Pb−Free packages are available.

I

ZM

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3

1N53 Series

40

°C/W)

30

20

L L

10

EQUAL CONDUCTION

THROUGH EACH LEAD

0

0 0.2 0.4 0.6 0.8 1

, JUNCTION‐TO‐LEAD THERMAL RESISTANCE (

JL

θ

L, LEAD LENGTH TO HEATSINK (INCH)

Figure 1. Typical Thermal Resistance

TEMPERATURE COEFFICIENTS

10

8

6

ZT

4

2

(mV/°C) @ I

0

, TEMPERATURE COEFFICIENT

Z

-2

θ V

34 56

VZ, ZENER VOLTAGE @ IZT (VOLTS)

RANGE

7

8910

Figure 2. Temperature Coefficient-Range for Units 3 to 10 Volts

300
200

100

ZT

50

30
20

(mV/°C) @ I

10

, TEMPERATURE COEFFICIENT

Z

5

θV

0 20 40 60 80 100 120 140 160 180 200 220

VZ, ZENER VOLTAGE @ IZT (VOLTS)

RANGE

Figure 3. Temperature Coefficient-Range for Units 10 to 220 Volts

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4

C/W)

JUNCTION‐TO‐LEAD (

(t, D), TRANSIENT THERMAL RESISTANCE

JL

θ

100

10

°

1

0.1

0.01

0.5

0.2

0.1

0.05

0.02

0.01

D = 0

0.0000001

1N53 Series

DUTY CYCLE, D = t1/t

SINGLE PULSE D TJL = qJL(t)P

P

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100

t, TIME (SECONDS)

t

PK

1

t

2

REPETITIVE PULSES D TJL = qJL(t,D)P

qJL(t,D) = D * q

[where q

(∞)+(1−D) * qJL(t)

JL

(t) is D = 0 curve]

JL

Figure 4. Typical Thermal Response

L, Lead Length = 3/8 Inch

2

PK

PK

40

20

10

4

2

1

0.4

, PEAK SURGE CURRENT (AMPS)

r

I

0.2

0.1
34 6810

*SQUARE WAVE

NOMINAL VZ (V)

PW=1ms*

PW=8.3ms*

PW=100ms*

PW=1000ms*

20 30 40 60 80 100 200

Figure 5. Maximum Non-Repetitive Surge Current

versus Nominal Zener Voltage

(See Note 4)

T=25°C

1000

TC=25°C

30
20

10

5

2

1

0.5

, PEAK SURGE CURRENT (AMPS)

r

I

PLOTTED FROM INFORMATION

0.2
GIVEN IN FIGURE 5

0.1

1 10 100 1000

PW, PULSE WIDTH (ms)

VZ=3.3V

VZ=200V

Figure 6. Peak Surge Current versus Pulse Width

(See Note 4)

1000

T=25°C

100

100

10

, ZENER CURRENT (mA)

1

Z

I

0.1
1 234 5678 910

V

, ZENER VOLTAGE (VOLTS)

Z

Figure 7. Zener Voltage versus Zener Current

V

= 3.3 thru 10 Volts

Z

10

, ZENER CURRENT (mA)

1

Z

I

0.1
10 20 30 40 50 60 70 80

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5

VZ, ZENER VOLTAGE (VOLTS)

Figure 8. Zener Voltage versus Zener Current

V

= 11 thru 75 Volts

Z

1N53 Series

100

10

, ZENER CURRENT (mA)

1

Z

I

0.1
80 100 120 140 160 180 200 220

, ZENER VOLTAGE (VOLTS)

V

Z

Figure 9. Zener Voltage versus Zener Current

V

= 82 thru 200 Volts

Z

APPLICATION NOTE

Since the actual voltage available from a given Zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:

Lead Temperature, T

, should be determined from:

L

TL = qLA PD + T

A

qLA is the lead-to-ambient thermal resistance and PD is the

power dissipation.

Junction Temperature, T

, may be found from:

J

TJ = TL + DT

JL

DTJL is the increase in junction temperature above the lead
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 1 for dc power.

DTJL = qJL P

D

For worst-case design, using expected limits of IZ, limits

and the extremes of TJ (DTJ) may be estimated.

of P

D

Changes in voltage, V

, can then be found from:

Z

DV = qVZ DT

J

qVZ, the Zener voltage temperature coefficient, is found

from Figures 2 and 3.

Under high power-pulse operation, the Zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.

Data of Figure 4 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 5 be exceeded.

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6

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SCALE 1:1

K

SURMETIC 40, AXIAL LEAD

CASE 017AA−01

ISSUE O

B

D

K

F

A

F

DATE 23 SEP 2005

NOTES:

1. CONTROLLING DIMENSION: INCH

2. LEAD DIAMETER AND FINISH NOT CONTROLLED
WITHIN DIMENSION F.

3. CATHODE BAND INDICATES POLARITY

DIM MIN MAX MIN MAX

A 0.330 0.350 8.38 8.89
B 0.130 0.145 3.30 3.68
D 0.037 0.043 0.94 1.09
F −−− 0.050 −−− 1.27
K 1.000 1.250 25.40 31.75

MILLIMETERSINCHES

DOCUMENT NUMBER:

STATUS:

NEW STANDARD:

© Semiconductor Components Industries, LLC, 2002

October, 2002 − Rev. 0

DESCRIPTION:

98AON21393D
ON SEMICONDUCTOR STANDARD

SURMETIC 40, AXIAL LEAD

http://onsemi.com

1

Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.

Case Outline Number:

PAGE 1 OF 2

XXX

DOCUMENT NUMBER:
98AON21393D

PAGE 2 OF 2

ISSUE REVISION DATE

O RELEASED FOR PRODUCTION. REQ. BY M. LYALL. 23 SEP 2005

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© Semiconductor Components Industries, LLC, 2005

September, 2005 − Rev. 01O

Case Outline Number:

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