Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D116
1N5059 to 1N5062
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 Jun 19
Page 2
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
temperature
• Low leakage current
ka
• Excellent stability
• Guaranteed avalanche energy
2/3 page (Datasheet)
MAM047
absorption capability
• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
1N5059 − 200 V
1N5060 − 400 V
1N5061 − 600 V
1N5062 − 800 V
V
RWM
crest working reverse voltage
1N5059 − 200 V
1N5060 − 400 V
1N5061 − 600 V
1N5062 − 800 V
V
R
continuous reverse voltage
1N5059 − 200 V
1N5060 − 400 V
1N5061 − 600 V
1N5062 − 800 V
I
F(AV)
average forward current Ttp=45°C;
− 2.0 A
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
=80°C; PCB mounting
amb
− 0.8 A
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
I
FSM
E
T
T
RSM
stg
j
non-repetitive peak forward current t = 10 ms half sinewave − 50 A
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj=T
j max
prior to
surge; inductive load switched off
− 20
mJ
storage temperature −65 +175 °C
junction temperature
see Fig.5
−65 +175 °C
1996 Jun 19 2
Page 3
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
forward voltage
reverse avalanche
I
=1A; Tj=T
F
= 1 A; see Fig.6
I
F
IR= 0.1 mA
; see Fig.6
j max
−−0.8 V
−−1.0 V
breakdown voltage
1N5059 225 −−V
1N5060 450 −−V
1N5061 650 −−V
1N5062 900 −−V
reverse current
reverse recovery time
V
R=VRRMmax
V
R=VRRMmax
; see Fig.7
; Tj= 165 °C; see Fig.7
when switched from I
=0.5AtoIR=1A;
F
−−1µA
−−150 µA
− 3 −
µs
measured at IR= 0.25 A; see Fig.10
diode capacitance
V
= 0 V; f = 1 MHz; see Fig.8
R
− 50 −
pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of Handbook SC01”
.
1996 Jun 19 3
Page 4
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
GRAPHICAL DATA
handbook, halfpage
3
I
F(AV)
(A)
2
1
0
0 40 20080 120 160
a = 1.57; VR=V
Lead length 10 mm.
RRMmax
; δ = 0.5.
MBG044
Ttp (°C)
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
T
MBG054
amb
1.6
handbook, halfpage
I
F(AV)
(A)
1.2
0.8
0.4
0
a = 1.57; VR=V
Device mounted as shown in Fig.9.
40 200
0
; δ = 0.5.
RRMmax
80 120 160
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
(°C)
1.42
I
F(AV)
MGC745
(A)
(W)
a=I
F(RMS)/IF(AV)
P
4
3
2
1
0
0123
handbook, halfpage
; VR=V
a = 3
RRMmax
2.5
; δ = 0.5.
1.57
2
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
200
handbook, halfpage
T
j
(°C)
100
0
0 1200
Solid line = VR.
Dotted line = V
RRM
; δ = 0.5.
60 6159 62
800400
MBH388
VR (V)
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
1996 Jun 19 4
Page 5
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
15
handbook, halfpage
I
F
(A)
10
5
0
0
Solid line: Tj=25°C.
Dotted line: Tj= 175 °C.
12
VF (V)
Fig.6 Forward current as a function of forward
voltage; maximum values.
MGC735
3
10
handbook, halfpage
I
R
(µA)
2
10
max
Tj (
10
VR=V
10
1
−1
RRMmax
40 80 120 160
.
Fig.7 Reverse current as a function of junction
temperature; maximum values.
MGC734
o
C)
2000
VR (V)
MBG031
2
10
2
10
handbook, halfpage
C
d
(pF)
10
1
f = 1 MHz; Tj=25°C.
101
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
1996 Jun 19 5
handbook, halfpage
Dimensions in mm.
50
25
7
50
2
3
MGA200
Fig.9 Device mounted on a printed-circuit board.
Page 6
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
I
I
(A)
0.25
R
(A)
0.5
0.5
1.0
F
t
rr
0
t
MAM057
handbook, full pagewidth
10 Ω
DUT
+
25 V
1 Ω
50 Ω
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.
Fig.10 Test circuit and reverse recovery time waveform and definition.
1996 Jun 19 6
Page 7
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
PACKAGE OUTLINE
handbook, full pagewidth
Dimensions in mm.
3.81
max
ka
4.57
max
28 min28 min
0.81
max
MBC880
Fig.11 SOD57.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 19 7
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