Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D050
1N4531; 1N4532
High-speed diodes
Product specification
Supersedes data of April 1996
1996 Sep 03
Page 2
Philips Semiconductors Product specification
High-speed diodes 1N4531; 1N4532
FEATURES
• Hermetically sealed leaded glass
SOD68 (DO-34) package
• High switching speed: max. 4 ns
DESCRIPTION
The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass
SOD68 (DO-34) packages.
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 75 V
handbook, halfpage
k
a
• Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
• High-speed switching
The diodes are type branded.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
MAM156
• Protection diodes in reed relays.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 75 V
continuous reverse voltage − 75 V
continuous forward current see Fig.2 − 200 mA
repetitive peak forward current − 450 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C − 500 mW
amb
storage temperature −65 +200 °C
junction temperature − 200 °C
1996 Sep 03 2
Page 3
Philips Semiconductors Product specification
High-speed diodes 1N4531; 1N4532
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
t
rr
V
fr
forward voltage IF= 10 mA; see Fig.3 − 1000 mV
reverse current see Fig.5
IN4531 V
IN4532 V
=20V − 25 nA
R
=20V; Tj= 150 °C − 50 µA
V
R
=50V − 100 nA
R
V
=50V; Tj= 150 °C − 100 µA
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6
IN4531 − 4pF
IN4532 − 2pF
reverse recovery time when switched from IF= 10 mA to
IN4531 − 4ns
IN4532 − 2ns
reverse recovery time when switched from I
IN4532 − 4ns
IR= 60 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
= 10 mA to
F
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 100 mA;
− 3V
tr≤ 30 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length 5 mm 120 K/W
thermal resistance from junction to ambient lead length 5 mm; note 1 350 K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 03 3
Page 4
Philips Semiconductors Product specification
High-speed diodes 1N4531; 1N4532
GRAPHICAL DATA
amb
MBG450
(oC)
300
handbook, halfpage
I
F
(mA)
200
100
0
0 100 200
Lead length 5 mm.
T
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
600
handbook, halfpage
I
F
(mA)
400
200
0
012
(1) Tj= 175°C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
(1) (2) (3)
MBG458
VF (V)
Fig.3 Forward current as a function of forward
voltage.
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
−1
10
1
Based on square wave currents.
Tj=25°C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MBG704
10
2
10
3
10
tp (µs)
4
10
1996 Sep 03 4
Page 5
Philips Semiconductors Product specification
High-speed diodes 1N4531; 1N4532
3
10
handbook, halfpage
I
R
(µA)
2
10
10
1
−1
10
−2
10
0 100
VR=50V
Solid line; maximum values.
Dotted line; typical values.
Tj (
MGD010
o
C)
Fig.5 Reverse current as a function of junction
temperature.
200
1.2
handbook, halfpage
C
d
(pF)
1.0
0.8
0.6
0.4
01020
f = 1 MHz; Tj=25°C.
MGD004
VR (V)
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 03 5
Page 6
Philips Semiconductors Product specification
High-speed diodes 1N4531; 1N4532
handbook, full pagewidth
R = 50SΩ
V = V I x R
RF S
(1) IR= 1 mA.
I
F
D.U.T.
SAMPLING
OSCILLOSCOPE
R = 50iΩ
MGA881
t
r
10%
V
R
90%
t
p
input signal
Fig.7 Reverse recovery voltage test circuit and waveforms.
t
I
F
t
rr
t
(1)
output signal
I
R = 50SΩ
Ω1 k Ω450
D.U.T.
I
OSCILLOSCOPE
R = 50iΩ
MGA882
Fig.8 Forward recovery voltage test circuit and waveforms.
1996 Sep 03 6
10%
t
r
90%
t
p
input
signal
V
V
fr
t
t
output
signal
Page 7
Philips Semiconductors Product specification
High-speed diodes 1N4531; 1N4532
PACKAGE OUTLINE
handbook, full pagewidth
Dimensions in mm.
1.6
max
25.4 min 25.4 min
3.04
max
0.55
max
MSA212 - 1
Fig.9 SOD68 (DO-34).
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 03 7
Loading...