Datasheet 1N4446, 1N4148 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D176

1N4148; 1N4448

High-speed diodes

Product specification
Supersedes data of 1996 Sep 03

1999 May 25

Philips Semiconductors Product specification

High-speed diodes 1N4148; 1N4448

FEATURES

• Hermetically sealed leaded glass
SOD27 (DO-35) package

• High switching speed: max. 4 ns

DESCRIPTION

The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass SOD27
(DO-35) packages.

• General application

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

handbook, halfpage

k

a

max. 75 V

• Repetitive peak forward current:

MAM246

max. 450 mA.

The diodes are type branded.

APPLICATIONS

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

• High-speed switching.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

F

I

FRM

I

FSM

RRM
R

repetitive peak reverse voltage − 75 V
continuous reverse voltage − 75 V
continuous forward current see Fig.2; note 1 − 200 mA
repetitive peak forward current − 450 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A

P

tot

T

stg

T

j

total power dissipation T

=25°C; note 1 − 500 mW

amb

storage temperature −65 +200 °C
junction temperature − 200 °C

Note

1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

1999 May 25 2

Philips Semiconductors Product specification

High-speed diodes 1N4148; 1N4448

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

I

R

I

R

C

d

t

rr

V

fr

forward voltage see Fig.3

1N4148 I
1N4448 I

=10mA − 1V

F

= 5 mA 0.62 0.72 V

F

= 100 mA − 1V

I

F

reverse current VR= 20 V; see Fig.5 25 nA

V

= 20 V; Tj= 150 °C; see Fig.5 − 50 µA

R

reverse current; 1N4448 VR= 20 V; Tj= 100 °C; see Fig.5 − 3 µA
diode capacitance f = 1 MHz; VR= 0; see Fig.6 4 pF
reverse recovery time when switched from IF= 10 mA to

4ns
IR= 60 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7

forward recovery voltage when switched from IF=50mA;

− 2.5 V

tr=20 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point lead length 10 mm 240 K/W
thermal resistance from junction to ambient lead length 10 mm; note 1 350 K/W

Note

1. Device mounted on a printed circuit-board without metallization pad.

1999 May 25 3

Philips Semiconductors Product specification

High-speed diodes 1N4148; 1N4448

GRAPHICAL DATA

amb

MBG451

(oC)

300

handbook, halfpage

I

F

(mA)

200

100

0

0 100 200

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

T

Fig.2 Maximum permissible continuous forward

current as a function of ambient
temperature.

600

handbook, halfpage

I

F

(mA)

400

200

0

012

(1) Tj= 175 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.

(1) (2) (3)

MBG464

VF (V)

Fig.3 Forward current as a function of forward

voltage.

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents.
Tj=25°C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

MBG704

10

2

10

3

10

tp (µs)

4

10

1999 May 25 4

Philips Semiconductors Product specification

High-speed diodes 1N4148; 1N4448

3

10

handbook, halfpage

I

R

(µA)

2

10

10

1

−1

10

−2

10

0 100

(1) VR= 75 V; typical values.
(2) VR= 20 V; typical values.

(1)

Tj (

MGD290

(2)

o

C)

Fig.5 Reverse current as a function of junction

temperature.

200

1.2

handbook, halfpage

C

d

(pF)

1.0

0.8

0.6

0.4
01020

f = 1 MHz; Tj=25°C.

MGD004

VR (V)

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

1999 May 25 5

Philips Semiconductors Product specification

High-speed diodes 1N4148; 1N4448

handbook, full pagewidth

R = 50SΩ

V = V I x R

RF S

(1) IR= 1 mA.

I

F

D.U.T.

SAMPLING

OSCILLOSCOPE

R = 50iΩ

MGA881

t

r

10%

V

R

90%

t

p

input signal

Fig.7 Reverse recovery voltage test circuit and waveforms.

t

I

F

t

rr

t

(1)

output signal

I

R = 50SΩ

Ω1 k Ω450

D.U.T.

I

OSCILLOSCOPE

R = 50iΩ

MGA882

Fig.8 Forward recovery voltage test circuit and waveforms.

1999 May 25 6

10%

t

r

90%

t

p

input
signal

V

V

fr

t

t

output

signal

Philips Semiconductors Product specification

High-speed diodes 1N4148; 1N4448

PACKAGE OUTLINE

Hermetically sealed glass package; axial leaded; 2 leads

LD L

DIMENSIONS (mm are the original dimensions)

G

UNIT

mm

Note

1. The marking band indicates the cathode.

b

max.

0.56

OUTLINE

VERSION

SOD27 DO-35A24 SC-40

D

max.

max.

IEC JEDEC EIAJ

L

1

min.

25.44.251.85

REFERENCES

SOD27

(1)

b

G

1

0 1 2 mm

scale

EUROPEAN

PROJECTION

ISSUE DATE

97-06-09

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 May 25 7

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Printed in The Netherlands 115002/03/pp8 Date of release: 1999 May 25 Document order number: 9397 750 05892