Datasheet 1H8-TB, 1H8-T3, 1H8, 1H7-TB, 1H7-T3 Datasheet (WTE)

WTE

POWER SEMICONDUCTORS

1H1 – 1H8

1.0A MINIATURE HIGH EFFICIENCY RECTIFIER

Features

!

Diffused Junction

!

Low Forward Voltage Drop

!

High Current Capability A B A

!

High Reliability

!

High Surge Current Capability

Mechanical Data

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Case: Molded Plastic D

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

Polarity: Cathode Band

!

Weight: 0.181grams (approx.)

!

Mounting Position: Any

!

Marking: Type Number

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol 1H1 1H2 1H3 1H4 1H5 1H6 1H7 1H8 Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage V

RRM

V

RWM

V

R

V

R(RMS)

50 100 200 300 400 600 800 1000 V

35 70 140 210 280 420 560 700 V

Dim Min Max

A
B
C
D

All Dimensions in mm

@TA=25°C unless otherwise specified

R-1

20.0 —

2.00 3.50

0.53 0.64

2.20 2.60

C

Average Rectified Output Current
(Note 1) @T

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)

Forward Voltage @IF = 1.0A V
Peak Reverse Current @TA = 25°C

At Rated DC Blocking Voltage @T
Reverse Recovery Time (Note 2) t
Typical Junction Capacitance (Note 3) C
Operating Temperature Range T
Storage Temperature Range T

= 55°C

A

= 100°C

A

I

I

FSM

RM

I

STG

O

FM

rr

1.0 A

30 A

1.0 1.3 1.7 V

5.0

100

50 75 nS

j

j

20 15 pF

-65 to +125 °C

-65 to +150 °C

µA

*Glass passivated forms are available upon request

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 1.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

1H1 – 1H8 1 of 3 © 2002 Won-Top Electronics

1.00

0.75

0.50

Single phase half wave

Resistive or Inductive load

10

1.0

T = 25 C

°

j

Pulse width = 300 s

µ

1H1-1H4

1H5

0.25

(AV)

I , AVERAGE FWD RECTIFIED CURRENT (A)

0

02550

T , AMBIENT TEMPERATURE ( C)

A

75

100 125 150 175

Fig. 1 Forward Current Derating Curve

30

Pulse width

8.3 ms single half-sine-wave
(JEDEC method)

20

10

FSM

I , PEAK FORWARD SURGE CURRENT (A)

0

1 10 100

NUMBER OF CYCLES AT 60Hz

Fig. 3 Peak Forward Surge Current

0.1

1H6 -1H8

F

I , INSTANTANEOUS FORWARD CURRENT (A)

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

°

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Fig. 2 Typical Forward Characteristics

100

1H1-1H5

T = 25 C

°

j

f = 1.0MHz

10

1H6 -1H8

j

C , CAPACITANCE (pF)

1

1 10 100

V , REVERSE VOLTAGE (V)

R

Fig. 4 Typical Junction Capacitance

t

rr

+0.5A

50 NI (Non-inductive)Ω

Device

Under

Test

(+)

50V DC
Approx

(-)

1.0

Ω

NI

Notes:

1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.

2. Rise Time = 10ns max. Input Impedance = 50 .

10 NIΩ

Oscilloscope

(Note 1)

Generator

(Note 2)

Ω

Ω

(-)

Pulse

(+)

0A

-0.25A

-1.0A

Settimebasefor5/10ns/cm

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

1H1 – 1H8 2 of 3 © 2002 Won-Top Electronics

ORDERING INFORMA TION

Product No.

!!!!

Package Type Shipping Quantity

1H1-T3 R-1 5000/Tape & Reel

1H1-TB

R-1 5000/Tape & Box
1H1 R-1 1000 Units/Box
1H2-T3 R-1 5000/Tape & Reel

1H2-TB

R-1 5000/Tape & Box
1H2 R-1 1000 Units/Box
1H3-T3 R-1 5000/Tape & Reel

1H3-TB

R-1 5000/Tape & Box
1H3 R-1 1000 Units/Box
1H4-T3 R-1 5000/Tape & Reel

1H4-TB

R-1 5000/Tape & Box
1H4 R-1 1000 Units/Box
1H5-T3 R-1 5000/Tape & Reel

1H5-TB

R-1 5000/Tape & Box
1H5 R-1 1000 Units/Box
1H6-T3 R-1 5000/Tape & Reel

1H6-TB

R-1 5000/Tape & Box
1H6 R-1 1000 Units/Box
1H7-T3 R-1 5000/Tape & Reel

1H7-TB

R-1 5000/Tape & Box
1H7 R-1 1000 Units/Box
1H8-T3 R-1 5000/Tape & Reel

1H8-TB

R-1 5000/Tape & Box
1H8 R-1 1000 Units/Box

Products listed in

!

T3 suffix refers to a 13” reel. TB suffix refers to Ammo Pack.
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.

bold

are WTE

Preferred

devices.

Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.

WARNING

support devices or systems without the express written approval.

: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life

Won-Top Electronics Co., Ltd.

No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan

886-7-822-5408 or 886-7-822-5410

Phone:

886-7-822-5417

Fax:

[e-mail]

Email:
Internet:

http://www.wontop.com

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1H1 – 1H8 3 of 3 © 2002 Won-Top Electronics