Page 1
RECTRON
.787 (20.0
)
MIN.
.106 (2.7
)
.126 (3.2
)
.787 (20.0
)
MIN.
.102 (2.6
)
.091 (2.3
)
DIA.
.025 (0.65
)
.021 (0.55
)
DIA.
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
HIGH EFFICIENCY RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* Low power loss, high efficiency
* Low leakage
* Low forward voltage
* High current capability
* High speed switching
* High surge capability
* High reliability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.12 gram
1H1
THRU
1H8
R-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TA= 25oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage TA = 25oC
Maximum Full Load Reverse Current
Average, Full Cycle .375” (9.5mm) lead length at TL = 55oC
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts
(At TA = 25oC unless otherwise noted)
RATINGS
(At TA = 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
TJ, T
STG
SYMBOL
V
F
I
R
trr
Dimensions in inches and (millimeters)
1H1 1H2 UNITS
50
35
50
1H1 1H2 1H3 1H4 1H5 1H6 1H7 UNITS1H8
1H3 1H4 1H5
100
200
300
15
50
210
300
-65 to + 150
400
280
400
25
5.0
100
70
140
100
200
1.0 1.7
1H5P
400
280
400
1H5P
1.01.3
1H6 1H81H7
600
420
600
800
560
800
12
75
1000
700
1000
Volts
Volts
Volts
Amps1.0
Amps
pF
0
C
Volts
uAmps
uAmps
nSec
2001-5
Page 2
RATING AND CHARACTERISTIC CURVES
(
1H1 THRU 1H8
)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE10NONINDUCTIVE
( + )
25 Vdc
(approx)
( - )
NOTES:
D.U.T
1
NONINDUCTIVE
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
OSCILLOSCOPE
(NOTE 1)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
100
10
TJ = 150
TJ = 100
1.0
TJ = 25
.1
INSTANTANEOUS REVERSE CURRENT, (uA)
.01
400 20 60 80 100 120 140
( - )
PULSE
GENERATOR
(NOTE 2)
( + )
+0.5A
-0.25A
-1.0A
trr
0
1cm
SET TIME BASE FOR
10/20 ns/cm
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
10
1.0
.1
.01
INSTANTANEOUS FORWARD CURRENT, (A)
.001
0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
2.0
Single Phase
Half Wave 60Hz
Resistive or
1.0
0
0 25 50 75 100125150175
AVERAGE FORWARD CURENT, (A)
AMBIENT TEMPERATURE ( )
Inductive Load
CHARACTERISTICS
300/400V
50/100/200V
600/800/1000V
TJ = 25
Pulse Width = 300uS
1% Duty Cycle
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
35
30
25
8.3ms Single Half Sine-Wave
(
JEDEC Method
)
20
15
10
5
0
PEAK FORWARD SURGE CURRENT, (A)
1 2 5 10 20 50 100
NUMBER OF CYCLES AT 60Hz
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
TJ = 25
1H1~1H5
1H6~1H8
4
2
JUNCTION CAPACITANCE, (pF)
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
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