Datasheet 16RIA120 Specification

Bulletin I2404 rev. A 07/00

16RIA SERIES

MEDIUM POWER THYRISTORS Stud Version

Features

Improved glass passivation for high reliability

and exceptional stability at high temperature

High di/dt and dv/dt capabilities

Standard package

Low thermal resistance

Metric threads version available

Types up to 1600V V

DRM

/ V

RRM

Typical Applications

Medium power switching

Phase control applications

Can be supplied to meet stringent military,

aerospace and other high-reliability requirements

16A

Major Ratings and Characteristics

Parameters Units

I

T(AV)

@ T

C

I

T(RMS)

I

TSM

I2t@

V

DRM/VRRM

t

q

T

J

@ 50Hz 340 225 A

@ 60Hz 360 235 A

50Hz 574 255 A2s

@ 60Hz 524 235 A2s

typical 110 µs

10 to 120 140 to 160

100 to 1200 1400 to 1600 V

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16RIA

16 16 A

85 85 °C

35 35 A

- 65 to 125 °C

Case Style

TO-208AA (TO-48)

1

16RIA Series

Bulletin I2404 rev. A 07/00

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

DRM/VRRM

Type number Code peak and off-state voltage (1) repetitive peak voltage (2) @ T

10 100 150 20

20 200 300

40 400 500

60 600 700

16RIA 8 0 800 900 10

100 1000 1100

120 1200 1300

140 1400 1500

160 1600 1700

(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2) For voltage pulses with t

≤ 5ms

p

On-state Conduction

Parameter Units Conditions

I

Max. average on-state current 16 16 A 180 ° sinusoidal conduction

T(AV)

@ Case temperature 85 85 °C

I

Max. RMS on-state current 3 5 35 A

T(RMS)

I

Max. peak, one-cycle 340 225 A t = 10ms No voltage

TSM

non-repetitive surge current 360 235 t = 8.3ms reapplied

2

I

t Maximum I2t for fusing 574 255 A2s t = 10ms No voltage Initial TJ = TJ max.

2

I

√t Maximum I2√t for fusing 5740 2550 A2√s t = 0.1 to 10ms, no voltage reapplied, T

V

Low level value of threshold 0.97 1.14 V (16.7% x π x I

T(TO)1

voltage
High level value of threshold 1.24 1.31 (I > π x I

V

T(TO)

2

voltage
Low level value of on-state 17.9 14.83 mΩ (16.7% x π x I

r

t1

slope resistance

r

High level value of on-state 13.6 12.03 (I > π x I

t2

slope resistance

Max. on-state voltage 1.75 --- V Ipk= 50 A, TJ = 25°C

V

TM

I

Maximum holding current 130 mA TJ = 25°C. Anode supply 6V, resistive load,

H

Latching current 200

I

L

, max. repetitive V

VVmA

, maximum non- I

RSM

DRM/IRRM

= TJ max.

J

16RIA

10 to 120 140 to 160

285 190 t = 10ms 100% V

300 200 t = 8.3ms reapplied Sinusoidal half wave,

524 235 t = 8.3ms reapplied

405 180 t = 10ms 100% V

375 165 t = 8.3ms rea pplied

T(AV)

T(AV)

--- 1.80

RRM

RRM

< I < π x I

T(AV)

), TJ = TJ max.

< I < π x I

T(AV)

), TJ = TJ max.

), TJ = TJ max.

T(AV)

), TJ = TJ max.

T(AV)

= TJ max.

J

max.

2

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Bulletin I2404 rev. A 07/00

Switching

Parameter 16RIA Units Conditions

di/dt Max. rate of rise of turned-on TJ = TJ max., VDM = rated V

current V

Typical turn-on time 0.9 TJ = 25°C,

t

gt

Typical reverse recovery time 4 µs TJ = TJ max.,

t

rr

t

Typical turn-off time 110 TJ = TJ max., ITM = I

q

≤ 600V 200 A/µs Gate pulse = 20V, 15Ω, t

DRM

≤ 800V 18 0 I

V

DRM

≤ 1000V 16 0

V

DRM

V

≤ 1600V 15 0

DRM

= (2x rated di/dt) A

TM

at = rated V

I

TM

DRM/VRRM

= I

, tp > 200µs, di/dt = -10A/µs

T(AV)

di/dt = -10A/µs, dv/dt = 20V/µs linear to

67% V

, gate bias 0V-100W

DRM

(*) tq = 10µsup to 600V, tq = 30µs up to 1600V available on special request.

DRM

= 6µs, tr = 0.1µs max.

p

, TJ = 125°C

, tp > 200µs, VR = 100V,

T(AV)

Blocking

Parameter 16RIA Units Conditions

dv/dt Max. critical rate of rise of 100 TJ = TJ max. linear to 100% rated V

off-state voltage 300 (*) TJ = TJ max. linear to 67% rated V

(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 16RIA160S90.

V/µs

16RIA Series

DRM

DRM

Triggering

Parameter 16RIA Units Conditions

PGMMaximum peak gate power 8.0 TJ = TJ max.

P

Maximum average gate power 2.0

G(AV)

I

Max. peak positive gate current 1.5 A TJ = TJ max.

GM

-V

Maximum peak negative 10 V TJ = TJ max.

GM

gate voltage

I

DC gate current required 90 TJ = - 65°C

GT

to trigger 60 mA T

35 T

V

DC gate voltage required 3.0 TJ = - 65°C

GT

to trigger 2.0 V T

1.0 V T

DC gate current not to trigger 2.0 mA TJ = TJ max., V

I

GD

V

DC gate voltage not to trigger 0.2 V TJ = TJ max.

GD

W

= 25°C

J

= 125°C

J

= 25°C

J

= 125°C

J

V

= rated value

DRM

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Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to­cathode applied

= rated value

DRM

Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated

anode-to-cathode applied

V

DRM

3

16RIA Series

Bulletin I2404 rev. A 07/00

Thermal and Mechanical Specification

Parameter 16RIA Units Conditions

TJMax. operating temperature range - 65 to 12 5 ° C

Max. storage temperature range - 65 to 125 °C

T

stg

Max. thermal resistance, 0.86 K/W DC operation

R

thJC

junction to case

Max. thermal resistance, 0.35 K/W Mounting surface, smooth, flat and greased

R

thCS

case to heatsink

T Mounting torque to nut to device

20(27.5) 25 lbf-in Lubricated threads

0.23(0.32) 0.29 kgf.m (Non-lubricated threads)

2.3(3.1) 2.8 Nm

wt Approximate weight 14 (0.49) g (oz)

Case style TO-208AA (TO-48) See Outline Table

Conduction

∆R

thJC

(The following table shows the increment of thermal resistence R

Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions

180° 0.21 0.15 K/W T

120° 0.25 0.25

90° 0.31 0.34

60° 0.45 0.47

30° 0.76 0.76

when devices operate at different conduction angles than DC)

thJC

= TJ max.

J

Ordering Information Table

Device Code

1 - Current code

2 - Essential part number

3 - Voltage code: Code x 10 = V

4 - None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A

M = Stud base TO-208AA (TO-48) M6 X 1

5 - Critical dv/dt: None = 300V/µs (Standard value)

4

16 RIA 160 M S90

2

1

3

(See Voltage Rating Table)

RRM

S90 = 1000V/µs (Special selection)

5

4

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Outline Table

16RIA Series

Bulletin I2404 rev. A 07/00

Case Style TO-208AA (TO-48)

All dimensions in millimeters (inches)

130

120

110

100

90

80

70

60

Ma xi mum All owa bl e Cas e Tem per atur e (° C)

50

0 5 10 15 20 25

16RIA Series (100 to 1200V)
R (DC) = 1.15 K/W

thJC

30°

60°

90°

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristic Fig. 2 - Current Ratings Characteristic

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Conducti on Angle

120°

180°

130

120

110

100

90

80

70

60

Max imum Al lowa ble Case Temp erat ure (°C)

50

0 10203040

16RIA Series (100 to 1200V)
R (DC) = 1.15 K/W

thJC

Conductio n Period

30°

60°

90°

120°

180°

Average On-state Current (A)

DC

5

16RIA Series

Bulletin I2404 rev. A 07/00

45

40

35

30

25

180°
120°

90°
60°
30°

RMS Limit

20

15

10

5

Maximum Average On-state Power Loss (W)

0

0 5 10 15 20 25

Conductio n Angle

16RIA Series
(100 to 1200V)
T = 125°C

J

Average On-state Current (A)

Fig. 3 - On-state Power Loss Characteristics

45

DC

40

180°
120°

35

90°
60°

30

30°

25

RMS Li mit

20

15

10

5

Maximum Average On-state Power Loss (W)

0

0 4 8 1216202428

Conducti on Per iod

16RIA Series
(100 to 1200V)
T = 125°C

J

Average On-state Current (A)

Fig. 4 - On-state Power Loss Characteristics

R

t

h

S

A

2

K

/

3

K

/

W

4

K

/

W

5

K

/

W

7

K

/

W

1

0

K

/

W

=

0

.

W

1

K

/

W

­D

e

l

t

a

R

0255075100125

Maxi mum Al lowa ble Amb ient Tempe ratu re ( °C)

R

t

h

S

A

2

K

/

3

K

/

W

4

K

/

W

5

K

/

W

7

K

/

W

1

0

K

/

W

=

0

.

W

1

K

/

W

­D

e

l

t

a

R

0255075100125

Max imum Allowa ble Ambie nt T empe ra ture ( °C)

300

280

260

At Any Rated Load Condition And With
Rated V Applied Following Surge.

RRM

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

240

220

200

180

16RIA Series

160

Peak Half Sine Wave On-state Current (A)

(100 t o 1200V)

140

110100

Number Of Equal Ampli tude Half Cy cle Curr ent Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

6

350

Maximum Non Repetitive Surge Current

325

300

275

Versus Pulse Trai n Duration. Control

Of Conduction May Not Be Maintained.

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

J

RRM

250

225

200

175

16RIA Series

150

Peak Half Sine Wave On-state Current (A)

(100 to 1200V)

125

0.01 0.1 1

Pulse Train Duration ( s)

Fig. 6 - Maximum Non-Repetitive Surge Current

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1000

5

100

16RIA Series

Bulletin I2404 rev. A 07/00

16RIA Series
(100 to 1200V)

130

120

110

100

90

Maximum Allowable Case Temperature (°C)

80

024681012141618

Fig. 8 - Current Ratings Characteristics

Maxi mum Average On-state Po wer Loss (W)

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10

Instantaneous On-state Current (A)

1

0.511.522.533.

Instantaneous On-state Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

16RIA Series (1 400 to 1600V)
R (DC) = 1.15 K/W

thJC

Conduction Angle

30°

60°

90°

120°

180°

Average On-state Current (A)

30

180°
120°

25

90°
60°
30°

20

RMS Li mit

15

10

5

0

0 5 10 15 20

Conductio n Angle

16RIA Seri es
(1400 to 1600V)
T = 125°C

J

Average On-state Current (A)

Fig. 10 - On-state Power Loss Characteristics

T = 25°C

J

T = 125°C

J

130

120

16RIA Series (1400 to 1 600V)
R (DC) = 1.15 K/W

thJC

110

100

Conductio n Period

90

80

Maximum Allowable Case Temperature (°C)

70

0 5 10 15 20 25 30

30°

60°

90°

120°

180°

Average On-state Current (A)

Fig. 9 - Current Ratings Characteristics

1

2

2

.

.

5

K

K

/

W

/

W

3

.

5

K

/

W

5

K

/

W

7

K

/

W

1

0

K

/

W

R

1

5

K

t

K

h

/

W

S

/

W

A

=

0

.

5

K

/

W

­D

e

l

t

a

R

0255075100125

Maximum All owable Ambient Temperature (°C)

DC

7

16RIA Series

Bulletin I2404 rev. A 07/00

40

DC

35

180°
120°

30

90°
60°

25

30°

20

RMS Li mit

15

10

5

Maximum Average On-state Power Loss (W)

0

0 4 8 1216202428

Average On-state Current (A)

1

1

.

K

5

/

K

W

/

W

/

W

Conducti on Period

16RIA Series

2

K

2

.

5

K

/

W

3

.

5

K

/

W

5

K

/

W

7

K

/

W

1

0

K

/

W

(1400 t o 1600V)
T = 125°C

J

0255075100125

Maximum Allowable Ambient Temperature (°C)

Fig. 11 - On-state Power Loss Characteristics

R

t

h

SA

=

0

.

5

K

/

W

­D

e

l

t

a

R

200

180

160

At Any Rated Load Condit ion And With
Rated V Applied Following Surge.

RRM

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

140

120

100

16RI A Series

Peak Half Sine Wave On-state Current (A)

(1400 to 1600V)

80

110100

Number Of Equal Amplit ude Half Cyc le Current Pulses (N)

Fig. 12 - Maximum Non-Repetitive Surge Current

1000

100

10

Peak Half Sine Wave On-state Current (A)

T = 25°C

J

T = 125°C

J

250

Maxi mum Non Repe ti ti ve Su rge Current

225

200

Versus Pulse Trai n Duration. Control

Of Conduction May Not Be Maintained.

Initial T = 125°C

No Voltage Reappli ed

Rated V Reapplied

J

RRM

175

150

125

100

16RIA Series
(1400 to 1600V)

75

0.01 0.1 1

Pulse Train Duration (s)

Fig. 13 - Maximum Non-Repetitive Surge Current

Instantaneous On-state Current (A)

1

0.511.522.533.544.55

16RIA Seri es
(1400 to 1600V)

Instantaneous On-state Voltage (V)

Fig. 14 - Forward Voltage Drop Characteristics

8

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Bulletin I2404 rev. A 07/00

10

Steady State Va lue

R = 1.15 K/W

thJC

thJC

Transient Thermal Impedance Z (K/W)

Instantaneous Gate Vol tage (V)

(DC Operation)

1

0.1

16RIA Series

0.01

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

Fig. 15 - Thermal Impedance Z

100

Rectangular gate pulse
a) Recommended load li ne for
rated di/dt : 10V, 20ohms
tr <=0.5 µs, tp >= 6 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 65ohms

10

tr<=1 µs, tp >= 6 µs

(b)

Tj = 25 °C

1

VGD

0.1

IGD

0.001 0.01 0.1 1 10 100

Tj = 125 °C

Instantaneous Gate Current (A)

(a)

Tj = -65 °C

16RIA Series Frequency Li mited by PG(AV)

Characteristics

thJC

(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms

(1)

Fig. 16 - Gate Characteristics

16RIA Series

(4)

(3)

(2)

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