Page 1
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Standard Recovery Diodes,
DO-4 (DO-203AA)
PRIMARY CHARACTERISTICS
I
F(AV)
Package DO-4 (DO-203AA)
Circuit configuration Single
(Stud Version), 16 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V V
• Designed and qualified for industrial and consumer level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Battery charges
16 A
• Converters
• Power supplies
• Machine tool controls
VS-16F(R) Series
Vishay Semiconductors
RRM
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
t
I
V
RRM
T
J
T
140 °C
C
50 Hz 350
60 Hz 370
50 Hz 612
60 Hz 560
Range 100 to 1200 V
16 A
25 A
-65 to +175 °C
ELECTRICAL SPECIFICATIONS SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-16F(R)
, MAXIMUM
V
RRM
VOLTAGE
CODE
10 100 150
20 200 275
40 400 500
60 600 725
80 800 950
100 1000 1200
120 1200 1400
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
, MAXIMUM
RSM
NON-REPETITIVE
PEAK VOLTAGE
V
I
MAXIMUM
RRM
AT T
A
A2s
= 175 °C
J
mA
12
Revision: 11-Jan-18
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Document Number: 93491
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VS-16F(R) Series
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FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
Maximum RMS forward current I
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 6120 A2s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
F(TO)1
F(TO)2
r
r
180° conduction, half sine wave
t = 10 ms
t = 8.3 ms 370
t = 10 ms
t = 8.3 ms 310
t = 10 ms
t = 8.3 ms 560
t = 10 ms
t = 8.3 ms 395
(16.7 % x x I
(I > x I
(16.7 % x x I
f1
(I > x I
f2
Ipk = 50 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.23 V
FM
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
reapplied
F(AV)
), TJ = TJ maximum 0.90
F(AV)
F(AV)
), TJ = TJ maximum 5.70
F(AV)
RRM
< I < x I
< I < x I
), TJ = TJ maximum 0.77
F(AV)
), TJ = TJ maximum 7.80
F(AV)
Vishay Semiconductors
16 A
140 °C
25 A
350
295
612
435
A
A
V
m
2
s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heat sink
Allowable mounting torque
Approximate weight
Case style See dimensions - link at the end of datasheet DO-4 (DO-203AA)
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.31 0.23
120° 0.38 0.40
90° 0.49 0.54
60° 0.72 0.75
30° 1.20 1.21
Note
• The table above shows the increment of thermal resistance R
R
R
T
Stg
thJC
thCS
J
DC operation 1.6
Mounting surface, smooth, flat and greased 0.5
Not lubricated threads
Lubricated threads
when devices operate at different conduction angles than DC
thJC
-65 to +175
-65 to +200
1.5 + 0 - 10 %
(13)
1.2 + 0 - 10 %
(10)
7g
0.25 oz.
T
= TJ maximum K/W
J
(lbf · in)
(lbf · in)
°C
K/W
N · m
N · m
Revision: 11-Jan-18
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Document Number: 93491
Page 3
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Maximum Allowable
Case Temperature (°C)
Average Forward Current (A)
130
140
150
160
170
180
0 5 10 15 20 25 30
DC
30°
60°
90°
120°
180°
Conduction Period
16F(R) Series
R (DC) = 1.6 K/W
thJC
25 50 75 100
Maximum Allowable Ambient Temperature (°C)
1
0
K
/
W
1
5
K
/
W
R
=
4
K
/
W
-
D
e
l
t
a
R
t
h
S
A
6
K
/
W
8
K
/
W
2
0
K
/
W
3
0
K
/
W
0
5
10
15
20
25
0 5 10 15 20 25 30
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Limit
Maximum Average Forward Power Loss (W)
Conduction Period
16F(R) Series
T = 175°C
J
VS-16F(R) Series
Vishay Semiconductors
180
170
160
150
Maximum Allowable
140
Case Temperature (°C)
130
0 4 8 12 16 20
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
16F(R) Series
R (DC) = 1.6 K/W
thJC
Conduction Angle
90°
60°
120°
30°
20
16
12
8
4
0
0 4 8 12 16 20
180°
120°
RMS Limit
90°
60°
30°
180°
Conduction Angle
16F(R) Series
T = 175°C
J
R
thSA
6
K
/
W
8
K
/
W
1
0
K
/
W
1
5K
/
W
2
0
K
/
W
3
0
K
/
W
25 50 75 100
=
4
K
/
W
D
e
l
t
a
R
Revision: 11-Jan-18
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
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Fig. 4 - Forward Power Loss Characteristics
3
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125
150
175
200
225
250
275
300
325
1 10 100
Peak Half Sine Wave Forward Current (A)
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
16F(R) Series
Initial T = 175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
J
Z
thJC
-
Transient Thermal Impedance (°C/W)
0.1
1
10
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
16F(R) Series
Steady State Value
R = 1.6 K/W
(DC Operation)
thJC
2 - Current rating: code = I
F(AV)
1 -Vishay Semiconductors product
3 - F = standard device
4 - None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
5 - Voltage code x 10 = V
RRM
(see Voltage Ratings table)
6
- None = stud base DO-4 (DO-203AA) 10-32UNF-2A
M = stud base DO-4 (DO-203AA) M5 x 0.8
Device code
5 61 32 4
16VS- F R 120 M
Fig. 5 - Maximum Non-Repetitive Surge Current
350
Maximum Non Repetitive Surge Current
325
300
275
250
225
200
175
150
125
16F(R) Series
0.01 0.1 1
Peak Half Sine Wave Forward Current (A)
Versus Pulse Train Duration.
Initial T = 175°C
No Voltage Reapplied
Rated V Reapplied
RRM
Pulse Train Duration (s)
VS-16F(R) Series
Vishay Semiconductors
1000
TJ = 25°C
100
10
Instantaneous Forward Current (A)
1
0 1 2 3 4 5 6
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
J
TJ = 175°C
16F(R) Series
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance Z
Characteristics
thJC
ORDERING INFORMATION TABLE
Dimensions www.vishay.com/doc?95311
Revision: 11-Jan-18
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [email protected]
LINKS TO RELATED DOCUMENTS
4
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Document Number: 93491
Page 5
DIMENSIONS in millimeters (inches)
3.30 (0.13)
4.00 (0.16)
5.50 (0.22) MIN.
10.20 (0.40)
MAX.
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
0.8 ± 0.1
(0.03 ± 0.004)
R 0.40
R (0.02)
Ø 6.8 (0.27)
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
3.50 (0.14)
20.30 (0.80) MAX.
11 (0.43)
2
+ 0.3
0
(0.08 )
+ 0.01
0
Outline Dimensions
Vishay Semiconductors
DO-203AA (DO-4)
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Revision: 01-Jan-2023
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