Datasheet 12TTS08PbF DataSheet (Vishay)

TO-220AB

PRODUCT SUMMARY

VT at 8 A 1.2 V

I

TSM

V

RRM

12TTS08PbF High Voltage Series

Vishay High Power Products

Phase Control SCR, 12.5 A

DESCRIPTION/FEATURES

(A)

1 (K)

2

(G) 3

140 A

800 V

The 12TTS08PbF High Voltage Series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125 °C junction
temperature.

Typical applications are in input rectification and crowbar
(soft start) and these products are designed to be used with
Vishay HPP input diodes, switches and output rectifiers
which are available in identical package outlines.

This product has been designed and qualified for industrial
level and lead (Pb)-free.

Available

RoHS*

COMPLIANT

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

Capacitive input filter T
common heatsink of 1 °C/W

= 55 °C, TJ = 125 °C,

A

13.5 17 A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

V

DRM/VRRM

I

TSM

V

T

dV/dt 150 V/µs

dI/dt 100 A/µs

T

J

Sinusoidal waveform 8

12.5

800 V

140 A

8 A, TJ = 25 °C 1.2 V

Range - 40 to 125 °C

A

VOLTAGE RATINGS

V

, MAXIMUM

PART NUMBER

12TTS08PbF 800 800 1.0

RRM

PEAK VOLTAGE

V

V

, MAXIMUM PEAK

DRM

DIRECT VOLTAGE

V

I

RRM/IDRM

AT 125 °C

mA

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94380 For technical questions, contact: [e-mail]
Revision: 23-Apr-08 1

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12TTS08PbF High Voltage Series

Vishay High Power Products

Phase Control SCR, 12.5 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current I

Maximum RMS on-state current I

Maximum peak, one-cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied, TJ = 125 °C 1000 A2√s

Maximum on-state voltage drop V

On-state slope resistance r

Threshold voltage V

Maximum reverse and direct leakage current I

Typical holding current I

Maximum latching current I

Maximum rate of rise of off-state voltage dV/dt T

T(AV)

T(RMS)

I

TSM

TM

t

T(TO)

RM/IDM

H

L

TC = 108 °C, 180° conduction, half sine wave

12.5

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied, T

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied, T

applied, TJ = 125 °C 120

RRM

= 125 °C 140

J

applied, TJ = 125 °C 72

RRM

= 125 °C 100

J

8 A, TJ = 25 °C 1.2 V

TJ = 125 °C

TJ = 25 °C

= 125 °C 1.0

T

J

V

= Rated V

R

RRM/VDRM

Anode supply = 6 V, resistive load, initial IT = 1 A 30

Anode supply = 6 V, resistive load 50

= 25 °C 150 V/µs

J

Maximum rate of rise of turned-on current dI/dt 100 A/µs

8

16.2 mΩ

0.87 V

0.05

A

A

mA

2

s

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current + I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

8.0

2.0

1.5 A

10 V

W

Anode supply = 6 V, resistive load, TJ = - 65 °C 20

Maximum required DC gate current to trigger I

GT

Anode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, T

= 25 °C 15

J

= 125 °C 10

J

mA

Anode supply = 6 V, resistive load, TJ = - 65 °C 1.2
Maximum required DC gate
voltage to trigger

Maximum DC gate voltage not to trigger V

Maximum DC gate current not to trigger I

V

GT

Anode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, T

GD

GD

TJ = 125 °C, V

= Rated value

DRM

= 25 °C 1

J

= 125 °C 0.7

J

V

0.2

0.1 mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Typical turn-on time t

Typical turn-off time t

gt

rr

q

TJ = 25 °C 0.8

TJ = 125 °C

100

3

µsTypical reverse recovery time t

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Document Number: 94380

2 Revision: 23-Apr-08

12TTS08PbF High Voltage Series

Phase Control SCR, 12.5 A

Vishay High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Marking device Case style TO-220AB 12TTS08

minimum 6 (5)

maximum 12 (10)

T

, T

J

Stg

R

thJC

R

thJA

R

thCS

DC operation 1.5

Mounting surface, smooth and greased 0.5

- 40 to 125 °C

62

2g

0.07 oz.

°C/W

kgf · cm
(lbf · in)

Document Number: 94380 For technical questions, contact: [e-mail]
Revision: 23-Apr-08 3

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12TTS08PbF High Voltage Series

Vishay High Power Products

125

120

115

110

105

100

Maximum Allowab le Case Temperature (°C)

0246810

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

125

120

115

12TTS08
R (DC) = 1.5 K/ W

thJC

30°

60°

90°

12TTS08
R (DC) = 1.5 K/ W

thJC

Cond uction An gle

120°

180°

Conduc tion Period

Phase Control SCR, 12.5 A

Maximum Average On-state Power Loss (W)

130

120

110

100

14

DC

180°

12

120°

90°

10

60°
30°

8

RM S Li m it

6

4

2

0

02468101214

Average On-st at e Current (A)

Conduct ion Pe riod

12TTS08
T = 125°C

J

Fig. 4 - On-State Power Loss Characteristics

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

Ini tia l T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

110

105

100

Maximum Allowable Case Temperature (°C)

0 2 4 6 8 101214

30°

60°

90°

120°

180°

DC

Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics

10

9

8

7

6

5

4

3

2

1

0

Maximum Averag e On-sta te Power Loss (W)

0123456789

180°
120°

90°
60°
30°

RM S Lim i t

Conduction Angle

12TTS08
T = 1 25 ° C

J

Average On-state Current (A)

Fig. 3 - On-State Power Loss Characteristics

90

80

70

12TTS08

Peak Half Sine Wa ve On-stat e Curren t ( A)

60

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

150

Maximum Non Re petitive Surge Curren t

140

130

120

110

100

90

80

70

60

Pe ak Ha lf Sine Wa ve O n-sta te Current (A)

50

Versus Pulse Train Duration . Cont rol

Of Conduction May Not Be Maintained.

12TTS08

0.01 0.1 1

Pu l se Tra in Du ra ti o n ( s)

Ini tia l T = 125° C

No Volt ag e Rea pp lied
Rated V Rea pp lied

J

RRM

Fig. 6 - Maximum Non-Repetitive Surge Current

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Document Number: 94380

4 Revision: 23-Apr-08

12TTS08PbF High Voltage Series

Phase Control SCR, 12.5 A

1000

12TTS08

100

T = 25 ° C

10

Insta ntaneous On-state Current (A)

1

0.5 1 1.5 2 2.5 3 3.5

In st a n t a ne o u s On -st a t e V o lt a g e ( V)

J

T = 1 25 ° C

J

Vishay High Power Products

Fig. 7 - On-State Voltage Drop Characteristics

10

Stead y State Value

thJC

1

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

0.1

Si n g l e Pu ls e

(DC Operat ion)

12TTS08

Transient Thermal Impedance Z (°C/W)

0.01

0.0001 0.001 0.01 0.1 1

Sq uare Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

Document Number: 94380 For technical questions, contact: [e-mail]

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Revision: 23-Apr-08 5

12TTS08PbF High Voltage Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

12 T T S 08 PbF

1

2

3

4

5

6

Phase Control SCR, 12.5 A

51324

- Current ratings (12 = 12.5 A)

- Circuit configuration:

T = Single thyristor

- Package:

T = TO-220

- Type of silicon

S = Standard recovery rectifier

- Voltage rating (08 = 800 V)

-

None = Standard production
PbF = Lead (Pb)-free

6

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95222

Part marking information http://www.vishay.com/doc?95225

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 23-Apr-08

Document Number: 94380

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay High Power Products

TO-220AB

A

Ø P

E

Q

D

D1

3241

(3)

CC

e1

b, b2

c

b1, b3

Section C - C and D - D

Detail B

(2)

L1

DD

L

2 x e

MM

0.015 ABC

c1

C

H1

C

Lead assignments

HEXFET

1. - Gate

2. - Drain

3. - Source

IGBTs, CoPAK

1. - Gate

2. - Collector

3. - Emitter

B

A

Seating plane

A1

A2

Diodes

1. - Anode/open

2. - Cathode

3. - Anode

A

A

Sheet 2

3 x b2 3 x b

E

H1

θ

View A - A

123

C

C

Detail B

D

Thermal pad

D2

E1

D

L1

SYMBOL

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 3.56 4.82 0.140 0.190 D1 8.38 9.02 0.330 0.355
A1 0.51 1.40 0.020 0.055 D2 12.19 12.88 0.480 0.507
A2 2.04 2.92 0.080 0.115 E 9.66 10.66 0.380 0.420 3

b 0.38 1.01 0.015 0.040 E1 8.38 8.89 0.330 0.350
b1 0.38 0.96 0.015 0.038 4 e 2.54 BSC 0.100 BSC
b2 1.15 1.77 0.045 0.070 H1 5.85 6.86 0.230 0.270
b3 1.15 1.73 0.045 0.068 L 12.70 14.73 0.500 0.580

c 0.36 0.61 0.014 0.024 L1 - 6.35 - 0.250 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
c2 0.31 1.14 0.012 0.045 Q 2.54 3.05 0.100 0.120

D 14.22 15.87 0.560 0.625 3 θ 90° to 93° 90° to 93°

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at

the outermost extremes of the plastic body

(4)

Dimension b1 and c1 apply to base metal only

(5)

Controlling dimensions: inches

Document Number: 95222 For technical questions concerning discrete products, contact: [e-mail]

www.vishay.com

Revision: 11-Mar-08 For technical questions concerning module products, contact: [e-mail]

1

Assembly
lot code

xxxxxxxx

V P119X

AC

TO-220AB

Part number

Product version (optional):
P = Lead (Pb)-free
None = Standard
Date code:
Year 1 = 2001
Week 19
Line X

Part Marking Information

Vishay High Power Products

Example: This is a xxxxxxxx with
assembly lot code AC,
assembled on WW 19, 2001
in the assembly line “X”

Document Number: 95225 For technical questions concerning discrete products, contact: [e-mail]
Revision: 30-Oct-08 For technical questions concerning module products, contact: [e-mail]

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1