Datasheet 12FR40 Specification

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DO-4 (DO-203AA)

Standard Recovery Diodes,

(Stud Version), 12 A

FEATURES

• High surge current capability

• Stud cathode and stud anode version

• Wide current range

• Types up to 1200 V V

• Designed and qualified for industrial and consumer level

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

VS-12F(R) Series

Vishay Semiconductors

RRM

PRIMARY CHARACTERISTICS

I

F(AV)

Package DO-4 (DO-203AA)

Circuit configuration Single

12 A

TYPICAL APPLICATIONS

• Battery charges

• Converters

• Power supplies

• Machine tool controls

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

V

RRM

T

J

T

144 °C

C

50 Hz 265

60 Hz 280

50 Hz 351

60 Hz 320

Range 100 to 1200 V

12 A

19 A

-65 to +175 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE
NUMBER

VS-12F(R)

, MAXIMUM

V

RRM

VOLTAGE

CODE

10 100 150

20 200 275

40 400 500

60 600 725

80 800 950

100 1000 1200

120 1200 1400

REPETITIVE PEAK

REVERSE VOLTAGE

V

V

, MAXIMUM

RSM

NON-REPETITIVE

PEAK VOLTAGE

V

I

MAXIMUM

RRM

AT T

A

A2s

= 175 °C

J

mA

12

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VS-12F(R) Series

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FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current 
at case temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 3510 A2s

Low level value of threshold voltage V

High level value of threshold voltage V
Low level value of forward 

slope resistance
High level value of forward 

slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

r

180° conduction, half sine wave

t = 10 ms

t = 8.3 ms 280

t = 10 ms

t = 8.3 ms 235

t = 10 ms

t = 8.3 ms 320

t = 10 ms

t = 8.3 ms 226

(16.7 % x  x I
(I >  x I

(16.7 % x  x I

f1

(I >  x I

f2

Ipk = 38 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.26 V

FM

No voltage
reapplied

100 % V
reapplied

No voltage

RRM



Sinusoidal half wave,
initial T

J

reapplied

100 % V
reapplied

F(AV)

), TJ = TJ maximum 0.97

F(AV)

F(AV)

), TJ = TJ maximum 6.20

F(AV)

RRM

< I <  x I

< I <  x I



), TJ = TJ maximum 0.77

F(AV)

), TJ = TJ maximum 10.70

F(AV)

Vishay Semiconductors

12 A

144 °C

19 A

265

225

= TJ maximum

351

250

A

A

V

m

2

s

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thCS

DC operation 2

Mounting surface, smooth, flat and greased 0.5

Not lubricated threads

Allowable mounting torque

Lubricated threads

Approximate weight

Case style See dimensions - link at the end of datasheet DO-4 (DO-203AA)

R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.33 0.26

120° 0.41 0.44

90° 0.53 0.58

T

60° 0.78 0.81

30° 1.28 1.29

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

-65 to +175

-65 to +200

1.5 + 0 - 10 % N · m

13 lbf · in

1.2 + 0 - 10 % N · m

10 lbf · in

7g

0.25 oz.

= TJ maximum K/W

J

°C

K/W

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140

150

160

170

180

0 2 4 6 8 10 12 14

30°

60°

90°

120°

180°

Maximum Allowable

Case Temperature (°C)

Conduction Angle

Average Forward Current (A)

12F(R) Series
R (DC) = 2.0 K/W

thJC

25 50 75 100

Maximum Allowable Ambient Temperature (°C)

R

=

8

K

/

W

­D

e

l

t

a

R

t

h

S

A

6

K

/

W

1

0

K

/

W

1

2

K

/

W

1

5

K

/

W

2

0

K

/

W

3

0

K

/

W

0

2

4

6

8

10

12

14

Average Forward Current (A)

RMS Limit

Maximum Average Forward

Power Loss (W)

Conduction Angle

180°
120°

90°
60°
30°

12F(R) Series
T = 175°C

J

0 2 4 6 8 10 12 14

25 50 75 100

Maximum Allowable Ambient Temperature (°C)

R

=

6

K

/

W

-

D

e

l

t

a

R

t

h

S

A

8

K

/

W

1

0

K

/

W

1

2

K

/

W

1

5

K

/

W

2

0

K

/

W

3

0

K

/

W

0

4

8

12

16

20

0 4 8 12 16 20

DC
180°
120°

90°
60°
30°

Average Forward Current (A)

RMS Limit

Maximum Average Forward

Power Loss (W)

Conduction Period

12F(R) Series
T = 175°C

J

VS-12F(R) Series

Vishay Semiconductors

180

170

160

150

140

Maximum Allowable

Case Temperature (°C)

130

0 4 8 12 16 20

12F(R) Series
R (DC) = 2.0 K/W

thJC

30°

60°

90°

Conduction Period

120°

180°

DC

Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

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Fig. 3 - Forward Power Loss Characteristics

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Fig. 4 - Forward Power Loss Characteristics

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100

125

150

175

200

225

250

1 10 100

Peak Half Sine Wave Forward Current (A)

Number Of Equal Amplitude Half Cycle Current Pulses (N)

12F(R) Series

Initial T = 175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

J

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

100

125

150

175

200

225

250

275

0.01 0.1 1

Peak Half Sine Wave Forward Current (A)

Pulse Train Duration (s)

12F(R) Series

Initial T = 175°C

No Voltage Reapplied

Rated V Reapplied

RRM

J

Versus Pulse Train Duration.

Maximum Non Repetitive Surge Current

1

10

100

1000

0 1 2 3 4 5 6

T = 25°C

J

Instantaneous Forward Current (A)

Instantaneous Forward Voltage (V)

12F(R) Series

T = 175°C

J

Z

thJC

-

Transient Thermal Impedance (°C/W)

0.1

1

10

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

12F(R) Series

Steady State Value

R = 2.0 K/W
(DC Operation)

thJC

1

- Current rating: code = I

F(AV)

2

- F = standard device

3

- None = s tud normal polarity (cathode to stud)

R = stud reverse polarity (anode to stud)

4

- Voltage code x 10 = V

RRM

(see Voltage Ratings table)

5

6

- None = stud base DO-4 (DO-203AA) 10-32UNF-2A

M = stud base DO-4 (DO-203AA) M5 x 0.8

Device code

5 61 32 4

12VS- F R 120 M

- Vishay Semiconductors product

VS-12F(R) Series

Vishay Semiconductors

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 6 - Maximum Non-Repetitive Surge Current

ORDERING INFORMATION TABLE

Fig. 7 - Forward Voltage Drop Characteristics

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

Dimensions www.vishay.com/doc?95311

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LINKS TO RELATED DOCUMENTS

4

Document Number: 93487

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DIMENSIONS in millimeters (inches)

3.30 (0.13)

4.00 (0.16)

5.50 (0.22) MIN.

10.20 (0.40)
MAX.

11.50 (0.45)

10.70 (0.42)

10/32" UNF-2A

For metric devices: M5 x 0.8

0.8 ± 0.1

(0.03 ± 0.004)

R 0.40

R (0.02)

Ø 6.8 (0.27)

Ø 1.80 ± 0.20

(Ø 0.07 ± 0.01)

3.50 (0.14)

20.30 (0.80) MAX.

11 (0.43)

2

+ 0.3

0

(0.08 )

+ 0.01

0

Outline Dimensions

Vishay Semiconductors

DO-203AA (DO-4)

Document Number: 95311 For technical questions, contact: [e-mail]
Revision: 30-Jun-08 1

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