Page 1
PD - 2.397A
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10BQ040
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics 10BQ040 Units
I
Rectangular 1.0 A
F(AV)
waveform
V
RRM
I
@ tp = 5µs sine 430 A
FSM
VF @ 1.0Apk, TJ = 125°C 0.49 V
T
J
CASE STYLE CASE OUTLINE
40 V
-55 to 150 °C
1 Amp
Description / Features
The 10BQ040 surface-mount Schottky rectifier has been designed for applications requiring very low forward drop and
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging and reverse battery protection.
• Small footprint, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long-term
reliability
SMB
267
Page 2
10BQ040
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Voltage Ratings
Part number 10BQ040
VRMax. DC Reverse Voltage (V)
V
Max. Working Peak Reverse Voltage (V)
RWM
Absolute Maximum Ratings
Parameters 10BQ Units Conditions
I
Max. Average Forward Current 1.0
F(AV)
See Fig. 5
I
Max. Peak One Cycle Non - Repetitive 430
FSM
Surge Current — see Fig. 7 45 10ms Sine 0r 6ms Rect. pulse and with rated V
E
Non - Repetitive Avalanche Energy 18 mJ TJ = 25°C, IAS = 0.2A, L = 13mH
AS
I
Repetitive Avalanche Current 0.2 A Current decaying linearly to zero in 1µsec
AR
50% duty cycle @ TC = 112°C, rectangular waveform
A
5µs Sine or 3µs Rect. pulse Following any rated load condition
A
Frequency limited by TJ max. VA = 1.5 X VR typical
Electrical Specifications
Parameters 10BQ Units Conditions
VFMMax. Forward Voltage Drop 0.53 V @ 1.0A
See Fig. 1 0.70 V @ 2.0A
0.49 V @ 1.0A
0.64 V @ 2.0A
I
Max. Reverse Leakage Current 0.10 mA TJ = 25°C
RM
See Fig. 2 4.0 mA TJ = 125°C
CTMax. Junction Capacitance 80 pF VR = 5VDC, (test signal range 100KHz to 1MHz) 25°C
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 5,300 V/µs
(Rated VR)
T
= 25°C
J
TJ = 125°C
VR = rated V
40
RRM
R
applied.
Thermal-Mechanical Specifications
Parameters 10BQ Units Conditions
TJMax.Junction Temperature Range -55 to 100 °C
T
Max. Storage Temperature Range -55 to 100 °C
STG
R
Max. Thermal Resistance, Junction 140 °C/W DC operation — See Fig. 4
thJA
to Ambient
R
Max. Thermal Resistance, Junction 36 °C/W DC operation
thJL
to Lead ➁
wt Approximate Weight 0.10 g
Case Style SMB Similar to DO-214AA
Pulse Width < 300µs, Duty Cycle < 2%
➁ Mounted 1 inch square PCB, thermal probe connected to lead 2mm from package
268
Page 3
10BQ040
Reverse Voltage - V (V)
R
R
Reverse Voltage - V (V)
FM
Forward Voltage Drop - V (V)
1
t , Rectangular Pulse Duration (Seconds)
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10
R (ma)
0.1
10
T = 150°C
J
1
125°C
100°C
75°C
1
T = 125°C
J
T = 25°C
J
0.1
0.2 0.4 0.6 0.8 1.0
Fig. 1 Max. Forward Voltage Drop
Characteristics
0.01
Reverse current - I
0.001
0.0001
0 10 20 30 40
50°C
25°C
Fig. 2 Typical Values of Reverse Current Vs. Reverse
Voltage
1000
T = 25°C
100
10
0 10 20 30 40
J
Fig. 3 Typical Junction CapacitanceVs. Reverse Voltage
100
D = 0.50
D = 0.33
10
D = 0.25
D = 0.17
D = 0.08
1
Single Pulse
(Thermal Resistance)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Fig. 4 Max. Thermal Impedance Z
P
DM
t
1
t
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
thJL
2
J DM
Characteristics
269
21
thJC C
Page 4
10BQ040
D
Average Forward Current - I (A)
F(AV)
10000
Square Wave Pulse Duration - t (microsec)
p
F(AV)
Average Forward Current - I (A)
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150
10BQ040
R (DC) = 36°C/W
thJL
140
130
DC
120
110
100
0 0.4 0.8 1.2 1.6 2
Fig. 5 Max. Allowable Case Temperature Vs.
Average Forward Current
1000
1.0
D = 0.08
D = 0.17
D = 0.25
0.8
D = 0.33
D = 0.50
0.6
RMS Limit
DC
0.4
0.2
0.0
0.0 0.4 0.8 1.2 1.6
Fig. 6 Forward Power Loss Characteristics
100
10
1 10 100 1000
Fig.7 Max. Non-Repetitive Surge Current Fig. 8 Unclamped Inductive Test Circuit
Refer to the Appendix Section for the following:
Appendix D: Tape and Reel Information — See page 338.
At Any Rated Load Condition
And With Rated V Applied
Following Surge
RRM
270
CU R R E NT
M O N IT O R
DUT
L
HIG H-S PE E D
Rg = 2 5 oh m
S W IT CH
FRE E-W H E EL
D IO D E
40H FL 4 0 S 0 2
+
BR
Vd = 25 V o lt
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