Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature (T
STG
) −65˚C to +150˚C
Maximum Junction Temperature (T
J
)
Ceramic +175˚C
V
EE
Pin Potential to Ground Pin −7.0V to +0.5V
Input Voltage (DC) V
EE
to +0.5V
Output current (DC Output HIGH) −50 mA
ESD (Note 2) ≥2000V
Recommended Operating
Conditions
Case Temperature (TC)
Military −55˚C to +125˚C
Supply Voltage (V
EE
) −5.7V to −4.2V
Note 1: Absolute maximum ratings are those values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.
Military Version
DC Electrical Characteristics
V
EE
=
−4.2V to −5.7V, V
CC
=
V
CCA
=
GND, T
C
=
−55˚C to +125˚C
Symbol Parameter Min Max Units T
C
Conditions Notes
V
OH
Output HIGH Voltage −1025 −870 mV 0˚C to
(Notes 3, 4,
5)
+125˚C
−1085 −870 mV −55˚C V
IN
=
V (Max) Loading with
V
OL
Output LOW Voltage −1830 −1620 mV 0˚C to or V
IL (Min)
50Ω to −2.0V
+125˚C
−1830 −1555 mV −55˚C
V
OHC
Output HIGH Voltage −1035 mV 0˚C to
(Notes 3, 4,
5)
+125˚C
−1085 mV −55˚C V
IN
=
V
IH
(Min) Loading with
V
OLC
Output LOW Voltage −1610 mV 0˚C to or VIL(Max) 50Ω to −2.0V
+125˚C
−1555 mV −55˚C
V
IH
Input HIGH Voltage −1165 −870 mV −55˚C to Guaranteed HIGH Signal
(Notes 3, 4,
5, 6)
+125˚C for All Inputs
V
IL
Input LOW Voltage −1830 −1475 mV −55˚C to Guaranteed LOW Signal
(Notes 3, 4,
5, 6)
+125˚C for All Inputs
I
IL
Input LOW Current 0.50 µA −55˚C to V
EE
=
−4.2V
(Notes 3, 4,
5)
+125˚C V
IN
=
V
IL
(Min)
I
IH
Input HIGH Current
(Notes 3, 4,
5)
I
0X–I3X
340 µA 0˚C to
S
0,S1
,E 300 +125˚C V
EE
=
−5.7V
I
0X–I3X
490 µA −55˚C V
IN
=
V
IH
(Max)
S
0,S1
,E 450
I
EE
Power Supply Current −80 −30 mA −55˚C to Inputs Open
(Notes 3, 4,
5)
+125˚C
Note 3: F100K 300 Series cold temperaturetesting is performed bytemperature soaking (to guarantee junction temperature equals−55˚C), then testing immediately
without allowing for thejunction temperature to stabilize due to heat dissapation afterpower-up. This provides “coldstart” specs which can beconsidered a worst case
condition at cold temperatures.
Note 4: Screen tested 100%on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.
Note 6: Guaranteed by applying specified input condition and testing V
OH/VOL
.
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