Datasheet 100370DMQB Datasheet (NSC)

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100370 Low Power Universal Demultiplexer/Decoder
General Description
The 100370 universal demultiplexer/decoder functions as ei­ther a dual 1-of-4 decoder or as a single 1-of-8 decoder, de­pending on the signal applied to the Mode Control (M) input. In the dual mode, each half has a pair of active-LOW Enable (E) inputs. Pin assignments for the E inputs are such that in the 1-of-8 mode they can easily be tied together in pairs to provide two active-LOW enables (E
1a
to E1b,E2ato E2b). Signals applied to auxiliary inputs Ha,Hband Hcdetermine whether the outputs are active HIGH or active LOW. In the dual 1-of-4 mode the Address inputs are A
0a,A1a
and A0b,
A
1b
with A2aunused (i.e., left open, tied to VEEor with LOW signal applied). In the 1-of-8 mode, the Address inputs are A
0a,A1a,A2a
with A0band A1bLOW or open. All inputs have
50 kpulldown resistors.
Features
n 35%power reduction of the 100170 n 2000V ESD protection n Pin/function compatible with 100170 n Voltage compensated operating range=−4.2V to −5.7V
Logic Symbols
Pin Names Description
A
na,Anb
Address Inputs
E
na,Enb
Enable Inputs M Mode Control Input H
a
Z0–Z3(Z0a–Z3a)
Polarity Select Input
H
b
Z4–Z7(Z0b–Z3b)
Polarity Select Input
H
c
Common Polarity
Select Input
Z
0–Z7
Single 1-of-8
Data Outputs
Z
na,Znb
Dual 1-of-4
Data Outputs
Single 1-of 8 Application
DS100311-1
Dual 1-of-4 Application
DS100311-4
August 1998
100370 Low Power Universal Demultiplexer/Decoder
© 1998 National Semiconductor Corporation DS100311 www.national.com
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Connection Diagrams
Logic Diagram
24-Pin DIP
DS100311-2
24-Pin Quad Cerpak
DS100311-3
DS100311-6
Note 1: (Zn) for 1-of-4 applications.
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Truth Tables Dual 1-of-4 Mode (M=A
2a
=
H
c
=
LOW)
Inputs Active HIGH Outputs Active LOW Outputs
(H
a
and HbInputs HIGH) (Haand HbInputs LOW)
E
1a
E
2a
A
1a
A
0a
Z
0a
Z
1a
Z
2a
Z
3a
Z
0a
Z
1a
Z
2a
Z
3a
E
1b
E
2b
A
1b
A
0b
Z
0b
Z
1b
Z
2b
Z
3b
Z
0b
Z
1b
Z
2b
Z
3b
HXXXLLLLHHHH XHXXLLLLHHHH LLLLHLLLLHHH LLLHLHLLHLHH LLHLLLHLHHLH LLHHL LLHHHHL
Single 1-of-8 Mode (M=HIGH; A
0b
=
A
1b
=
H
a
=
H
b
=
LOW)
Inputs Active HIGH Outputs (Note 2)
(H
c
Input HIGH)
E
1E2A2aA1aA0aZ0Z1Z2Z3Z4Z5Z6Z7
H X X X X LLLLLLLL X H X X X LLLLLLLL L L L L LHLLLLLLL L L L L HLHLLLLLL L L L H L LLHLLLLL L L L H HLLLHLLLL L L H L L LLLLHLLL L L H L HLLLLLHLL L L H H L LLLLLLHL L L H H HLLLLLLLH
H=HIGH Voltage Level L=LOW Voltage Level X=Don’t Care E
1
=
E
1a
and E1bwired; E
2
=
E2
2a
and E2bwired
Note 2: for H
c
=
LOW, output states are complemented
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Absolute Maximum Ratings (Note 3)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Above which the useful life may be impaired.
Storage Temperature (T
STG
) −65˚C to +150˚C
Maximum Junction Temperature (T
J
)
Ceramic +175˚C
V
EE
Pin Potential to Ground Pin −7.0V to +0.5V
Input Voltage (DC) V
EE
to +0.5V
Output Current (DC Output HIGH) −50 mA
ESD (Note 4) 2000V
Recommended Operating Conditions
Case Temperature (TC)
Military −55˚C to +125˚C
Supply Voltage (V
EE
) −5.7V to −4.2V
Note 3: Absolute maximum ratings are those values beyond which the de­vice may be damaged or have its useful life impaired. Functional operation under these conditions is not implied.
Note 4: ESD testing conforms to MIL-STD-883, Method 3015.
Military Version DC Electrical Characteristics
V
EE
=
−4.2V to −5.7V, V
CC
=
V
CCA
=
GND, T
C
=
−55˚C to +125˚C
Symbol Parameter Min Max Units T
C
Conditions Notes
−1025 −870 mV 0˚C to
V
OH
Output HIGH Voltage +125˚C
−1085 −870 mV −55˚C V
IN
=
V
IH
(Max) Loading with (Notes 5, 6, 7)
−1830 −1620 mV 0˚C to or V
IL
(Min) 50to −2.0V
V
OL
Output LOW Voltage +125˚C
−1830 −1555 mV −55˚C
−1035 mV 0˚C to
V
OHC
Output HIGH Voltage +125˚C
−1085 mV −55˚C V
IN
=
V
IH
(Min) Loading with (Notes 5, 6, 7)
−1610 mV 0˚C to or V
IL
(Max) 50to −2.0V
V
OLC
Output LOW Voltage +125˚C
−1555 mV −55˚C
V
IH
Input HIGH Voltage −1165 −870 mV −55˚C to Guaranteed HIGH Signal for (Notes 5, 6, 7, 8)
+125˚C All Inputs
V
IL
Input LOW Voltage −1830 −1475 mV −55˚C to Guaranteed LOW Signal for (Notes 5, 6, 7, 8)
+125˚C All Inputs
I
IL
Input LOW Current 0.50 µA −55˚C to V
EE
=
−4.2V (Notes 5, 6, 7)
+125˚C V
IN
=
V
IL
(Min)
I
IH
Input HIGH Current
240 µA 25˚C to
+125˚C
V
EE
=
−5.7V (Notes 5, 6, 7)
340 µA −55˚C V
IN
=
V
IH
(Max)
I
EE
Power Supply Current −105 −36 mA −55˚C to Inputs Open (Notes 5, 6, 7)
+125˚C
Note 5: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C, then testing immediately without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures.
Note 6: Screen tested 100%on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8. Note 7: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8. Note 8: Guaranteed by applying specific input condition and testing V
OH/VOL
.
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AC Electrical Characteristics
V
EE
=
−4.2V to −5.7V, V
CC
=
V
CCA
=
GND
Symbol Parameter T
C
=
−55˚C T
C
=
+25˚C T
C
=
+125˚C Units Conditions Notes
Min Max Min Max Min Max
t
PLH
Propagation Delay 0.3 2.40 0.4 2.20 0.40 2.70 ns
t
PHL
Ena,Enbto Output
t
PLH
Propagation Delay 0.30 2.60 0.40 2.40 0.40 2.90 ns
t
PHL
Ana,Anbto Output
(Notes 9, 10,
11)
t
PLH
Propagation Delay 0.30 2.60 0.40 2.40 0.40 2.40 ns
Figures 1, 2
t
PHL
Ha,Hb,Hcto Output
t
PLH
Propagation Delay 0.40 3.10 0.60 2.80 0.70 3.70 ns
t
PHL
M to Output
t
TLH
Transition Time 0.30 1.60 0.30 1.60 0.30 1.60 ns (Note 12)
t
THL
20%to 80%,80%to 20
%
Note 9: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures.
Note 10: Screen tested 100%on each device at +25˚C, temperature only, Subgroup A9. Note 11: Sample tested (Method 5005, Table I) on each Mfg. lot at +25˚C, Subgroup A9, and at +125˚C, and −55˚C Temp., Subgroups A10 and A11. Note 12: Not tested at +25˚C, +125˚C and −55˚C Temperature (design characterization data).
Test Circuit
DS100311-7
Notes:
V
CC,VCCA
=
+2V, V
EE
=
−2.5V L1 and L2=equal length 50impedance lines R
T
=
50terminator internal to scope
Decoupling 0.1 µF from GND to V
CC
and V
EE
All unused outputs are loaded with 50to GND C
L
=
Fixture and stray capacitance 3pF
Pin numbers shown are for flatpak; for DIP see logic symbol
FIGURE 1. AC Test Circuit
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Switching Waveforms
DS100311-8
FIGURE 2. Propagation Delay and Transition Times
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Physical Dimensions inches (millimeters) unless otherwise noted
24-Lead Ceramic Dual-In-Line Package (D)
NS Package Number J24E
24-Lead Ceramic Flatpak (F)
NS Package Number W24B
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LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DE­VICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMI­CONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or sys­tems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose fail­ure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.
2. A critical component in any component of a life support device or system whose failure to perform can be rea­sonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: support@nsc.com
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100370 Low Power Universal Demultiplexer/Decoder
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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