Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National SemiconductorSalesOffice/
Distributors for availability and specifications.
Above which the useful life may be impaired.
Storage Temperature (T
STG
) −65˚C to +150˚C
Maximum Junction Temperature (T
J
)
Ceramic +175˚C
V
EE
Pin Potential to Ground Pin −7.0V to +0.5V
V
TTL
Pin Potential to Ground Pin −0.5V to +6.0V
Input Voltage (DC) −0.5V to +6.0V
Output Current (DC Output HIGH) −50 mA
ESD (Note 2) ≥2000V
Recommended Operating
Conditions
Case Temperature (TC)
Military −55˚C to +125˚C
Supply Voltage (V
EE
) −5.7V to −4.2V
Note 1: Absolute maximum ratings are those values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.
Military Version
DC Electrical Characteristics
V
EE
=
−4.2V to −5.7V, V
CC
=
V
CCA
=
GND, T
C
=
−55˚C to +125˚C, V
TTL
=
+4.5V to +5.5V
Symbol Parameter Min Max Units T
C
Conditions Notes
V
OH
Output HIGH Voltage −1025 −870 mV 0˚C to +125˚C V
IN
=
V
IH
(Max)
or VIL(Min)
Loading with
50Ω to −2.0V
(Notes 3, 4, 5)
−1085 −870 mV −55˚C
V
OL
Output LOW Voltage −1830 −1620 mV 0˚C to +125˚C
−1830 −1555 mV −55˚C
V
OHC
Output HIGH Voltage −1035 mV 0˚C to +125˚C V
IN
=
V
IH
(Max)
or VIL(Min)
Loading with
50Ω to −2.0V
(Notes 3, 4, 5)
−1085 mV −55˚C
V
OLC
Output LOW Voltage −1610 mV 0˚C to +125˚C
−1555 mV −55˚C
V
IH
Input HIGH Voltage 2.0 5.0 V −55˚C to +125˚C Over V
TTL,VEE,TC
Range (Notes 3, 4, 5, 6)
V
IL
Input LOW Voltage 0.0 0.8 V −55˚C to +125˚C Over V
TTL,VEE,TC
Range (Notes 3, 4, 5, 6)
I
IH
Input HIGH Current 20 µA −55˚C to +125˚C V
IN
=
+2.7V (Notes 3, 4, 5)
Breakdown Test 100 µA −55˚C to +125˚C V
IN
=
+7.0V
I
IL
Input LOW Current
Data −0.9 mA −55˚C to +125˚C V
IN
=
+0.4V (Notes 3, 4, 5)
Enable −5.4
V
FCD
Input Clamp Diode Voltage −1.2 V −55˚C to +125˚C I
IN
=
−18 mA (Notes 3, 4, 5)
I
EEVEE
Power Supply Current −70 −22 mA −55˚C to +125˚C All Inputs V
IN
=
+4.0V (Notes 3, 4, 5)
I
TTLVTTL
Power Supply Current 38 mA −55˚C to +125˚C All Inputs V
IN
=
GND (Notes3, 4, 5)
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considereda worst case
condition at cold temperatures.
Note 4: Screen tested 100%on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.
Note 6: Guaranteed by applying specified input condition and testing V
OH/VOL
.
AC Electrical Characteristics
V
EE
=
−4.2V to −5.7V, V
CC
=
V
CCA
=
GND, V
TTL
=
+4.5V to +5.5V
Symbol Parameter T
C
=
−55˚C T
C
=
+25˚C T
C
=
+125˚C Units Conditions Notes
Min Max Min Max Min Max
t
PLH
Propagation Delay 0.50 3.00 0.50 2.90 0.30 3.30 ns (Notes 7, 8, 9)
t
PHL
Data and Enable to Output
Figures 1, 2
t
TLH
Transition Time 0.35 1.80 0.45 1.80 0.45 1.80 ns (Note 10)
t
THL
20%to 80%,80%to 20
%
Note 7: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures.
Note 8: Screen tested 100%on each device at +25˚C temperature only, Subgroup A9.
Note 9: Sample tested (Method 5005, Table I) on each manufactured lot at +25˚C, Subgroup A9, and at +125˚C and −55˚C temperatures, Subgroups A10 and A11.
Note 10: Not tested at +25˚C, +125˚C, and −55˚C temperature (design characterization data).
www.national.com3