Dataram DVM16S2L8-4G User Manual

DVM16S2L8/4G

4GB - 204-Pin 2Rx8 Unbuffered Non-ECC LV DDR3 SODIMM

Identification
DVM16S2L8/4G 512Mx64

4GB 2Rx8 PC3L-12800S-11

Performance Range
Clock / Module Speed / CL-t

RCD

–tRP
800 MHz / DDR3L-1600 / 11-11-11
667 MHz / DDR3L-1333 / 10-10-10
667 MHz / DDR3L-1333 / 9-9-9
533 MHz / DDR3L-1066 / 8-8-8
533 MHz / DDR3L-1066 / 7-7-7
400 MHz / DDR3L-800 / 6-6-6
333 MHz / DDR3L-667 / 5-5-5

Features

Description

204-pin JEDEC-compliant SO-DIMM, 67.60 mm wide by 30.00 mm high
Operating Voltage: VDD = VDDQ = +1.35V (1.283V to 1.45V)
Backward-compatible to VDD = VDDQ = +1.5V ±0.075V
I/O Type: SSTL_15
Data Transfer Rate: 12.8 Gigabytes/sec
Data Bursts: 8 and burst chop 4 mode
ZQ Calibration for Output Driver and On-Die Termination (ODT)
Programmable ODT / Dynamic ODT during Writes
Programmable CAS Latency: 5, 6, 7, 8, 9, 10 and 11
Differential Data Strobe signals
SDRAM Addressing (Row/Col/Bank): 15/10/3
Fully RoHS Compliant

DVM16S2L8/4G is a non-ECC Unbuffered
512Mx64 small –outline memory module, which
conforms to JEDEC's DDR3L-12800, PC3-1600
standard. The assembly is Dual-Rank. Each rank is
comprised eight 256Mbx8 DDR3-1600 SDRAMs.

One EEPROM is used for Serial Presence Detect.

Both output driver strength and input termination
impedance are programmable to maintain signal
integrity on the I/O signals in a Fly-by topology.

Notes

Tolerances on all dimensions
except where otherwise
indicated are .13 (.005).

All dimensions are expressed
in millimeters [inches]

DVM16S2L8/4G 04-Mar-16
Copyright  2016 Dataram Corporation | U.S.A. Headquarters [phone] | Offices in Europe and Asia | www.dataram.com

The information contained in this document has been carefully checked and is believed to be reliable and accurate. However, Dataram assumes no responsibility for errors.