Dallas Semiconductor DS32KHZ-WBGA, DS32KHZ-DIP, DS32KHZ-N-WBGA, DS32KHZ-N-DIP Datasheet

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32.768kHz Temperature-Compensated

www.maxim-ic.com

GENERAL DESCRIPTION

The DS32kHz is a temperature-compensated crystal
oscillator (TCXO) with an output frequency of

32.768kHz. This device addresses applications
requiring better timekeeping accuracy and can be
used to drive the X1 input of most Dallas
Semiconductor real-time clocks (RTCs), chipsets, and
other ICs containing RTCs. This device is available in
commercial (DS32kHz) and industrial (DS32kHz-N)
temperature versions.

APPLICATIONS

GPS Receivers
Telematics
Network Timing and Synchronization in Servers,

Routers, Hubs, and Switches

Automatic Power Meters

PIN CONFIGURATIONS

TOP VIEW

DS32kHz

Crystal Oscillato

FEATURES

§ Accurate to ±4 Min/Yr (-40°C to +85°C)

§ Accurate to ±1 Min/Yr (0°C to +40°C)

§ Battery Backup for Continuous Timekeeping

§ V

§ V

Operating Voltage: 2.7V to 5.5V with VCC

BAT

Grounded

Operating Voltage: 4.5V to 5.5V

CC

§ Operating Temperature Range:

0°C to +70°C (Commercial)

-40°C to +85°C (Industrial)

§ No Calibration Required

§ Low-Power Consumption

§ Surface Mountable Using BGA Package

§ UL Recognized

ORDERING INFORMATION

PART TEMP RANGE PIN-PACKAGE

DS32kHz/DIP 0ºC to +70ºC 14 DIP
DS32kHz-N/DIP -40ºC to +85ºC 14 DIP
DS32kHz/WBGA 0ºC to +70ºC 36 BGA
DS32kHz-N/WBGA -40ºC to +85ºC 36 BGA

9

8

N.C.

V

CC

32KHZ OUT

TPIN

TPIN

N.C.

N.C.

N.C.

GND

V

BAT

N.C.

N.C.

14

1

13

2

DS32kHz

12

3

11

4

10

5

6

7

DIP

BGA

Note: Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device

may be simultaneously available through various sales channels. For information about device errata, click here: www.maxim-ic.com/errata

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REV: 041603

DS32kHz

ABSOLUTE MAXIMUM RATINGS

Voltage Range on Any Pin Relative to Ground -3.0V to +7.0V
Operating Temperature Range
Commercial 0°C to +70°C
Industrial -40°C to +85°C
Storage Temperature Range -40°C to +85°C
Soldering Temperature (BGA) See IPC/JEDEC J-STD-020A (2x max) (Note 1)
Soldering Temperature, Leads (DIP) 260°C for 10 seconds (Notes 1, 2)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is
not implied. Exposure to the absolute maximum rating conditions for extended periods may affect device.

RECOMMENDED DC OPERATING CONDITIONS

(TA = -40°C to +85°C)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Power-Supply Voltage VCC

Battery Voltage (Note 3) V

BAT

4.5 5.0 5.5 V

2.7 3.0 3.3, 5.5 V

DC ELECTRICAL CHARACTERISTICS

(Over the operating range, unless otherwise specified.)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Active Supply Current ICC (Notes 4, 5) 150 180 µA

Active Battery Current I

BAT

= 0V, V

V

CC

(Notes 4, 5, 6, 7)

= 3.3V

BAT

1 4 µA

High Output Voltage (VCC) VOH IOH = -1.0mA 2.4 V

Low Output Voltage VOL IOL = 2.1mA 0.4 V

Battery Switch Voltage VSW V

High Output Voltage (V

Note 1: Post-solder cleaning with water-washing techniques is acceptable, provided that ultrasonic vibration is not used. Such cleaning can

Note 2: Encapsulated DIP modules can be successfully processed through conventional wave-soldering techniques, as long as the temperature

Note 3: V
Note 4: Typical values are at +25°C and 5.0V VCC, 3.0 V
Note 5: These parameters are measured under no load conditions.
Note 6: This current is the active mode current sourced from the backup supply/battery.
Note 7:

damage the crystal.

of the crystal contained inside does not exceed +150°C.

must be no greater than 3.3V when the device is used in the dual-supply operating modes.

BAT

Battery current increases to 450µA (typ) for 122ms (typ) for every 64 seconds.

) VOH IOH = -0.1mA 2.4 V

BAT

, unless otherwise indicated.

BAT

V

BAT

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AC TIMING CHARACTERISTICS

(Over the operating range, unless otherwise specified.)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

DS32kHz

Output Frequency f

Frequency Stability vs.
Temperature

32.768 kHz

OUT

0°C to +40°C -2.0 +2.0

∆f/f

O

-40°C to +85°C or
0°C to +70°C

-7.5 +7.5

ppm

Duty Cycle tW/t 45 50 55 %

Cycle Time t

(Note 8) 30.518 µs

CYC

High/Low Time tH/tL (Note 8) 15.06 µs

Rise Time tR (Note 8) 200 ns

Fall Time tF (Note 8) 60 ns

Oscillator Startup Time t

Frequency Stability vs.
Operating Voltage

(Note 8) 1 s

OSC

= 5.0V or

V

CC

V

= 3.0V, VCC = 0V

BAT

(Notes 4, 9)

±2.5 ppm/V

∆f/

V

Crystal Aging ∆f/fO (Notes 4, 10) ±1.0 ppm/yr

Note 8: These parameters are measured using a 15pF load.
Note 9: Error is measured from the nominal supply voltage of whichever supply is powering the device.
Note 10: After reflow.

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