Dallas Semiconductor DS2016S, DS2016 Datasheet

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FEATURES

§ Low-power CMOS design

§ Standby current

− 50 nA max at tA = 25°C VCC = 3.0V

− 100 nA max at tA = 25°C VCC = 5.5V

− 1 µA max at tA = 60°C VCC = 5.5V

§ Full operation for VCC = 5.5V to 2.7V

§ Data retention voltage = 5.5V to 2.0V

§ Fast 5V access time

− DS2016 - 100 100 ns

− DS2016 - 150 150 ns

§ Reduced-speed 3V access time

− DS2016 - 100 250 ns

− DS2016 - 150 250 ns

§ Operating temperature range of -40°C to

+85°C

§ Full static operation

§ TTL compatible inputs and outputs over

voltage range of 5.5V to 2.7 volts.

§ Available in 24-pin DIP and 24-pin SOIC

packages

§ Suitable for both battery operated and battery

backup applications

PIN ASSIGNMENT

PIN DESCRIPTION

A0 - A10 - Address Inputs
DQ0 - DQ7 - Data Input/Output

CE - Chip Enable Input
WE - Write Enable Input
OE - Output Enable Input

V

CC

- Power Supply Input 2.7V - 5.5V

GND - Ground

DESCRIPTION

The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access
memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single

power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input (CE ) is used for
device selection and can be used in order to achieve the minimum standby current mode, which facilitates
both battery operated and battery backup applications. The device provides access times as fast as 100 ns
when operated from a 5-volt power supply input and also provides relatively good performance of 250 ns
access while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over the
input voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications where
battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8
SRAM and is pin-compatible with ROM and EPROM of similar density.

DS2016

2k x 8 3V/5V Operation Static RAM

www.dalsemi.com

123456789101112132423222120191817161514VCCA8A9WEOEA10CEDQ7

DQ6

DQ5

DQ4

DQ3

A7A6A5A4A3A2A1A0DQ0

DQ1

DQ2

GND

DS2016 24-Pin DIP (600-mil)

DS2016R 24-Pin SOIC (300-mil)

DS2016

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OPERATION MODE

MODE

CE

OE WE

A0-A10 DQ-DQ7 POWER

READ L L H STABLE DATA OUT I

CCO

WRITE L X L STABLE DATA IN I

CCO

DESELECT L H H X HIGH-Z I

CCO

STANDBY H X X X HIGH-Z I

CCS

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING

V

CC

Power Supply Voltage -0.3V to +7.0V

V

IN

, V

I/O

Input, Input/Output Voltage -0.3 to VCC +0.3V

T

STG

Storage Temperature -55°C to +125°C

T

OPR

Operating Temperature -40°C to +85°C

T

SOLDER

Soldering Temperature/Time 260 °C for 10 seconds

CAPACITANCE (TA= 25°C)

PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

Input Capacitance C

IN

5 10 pF

Input/Output Capacitance C

I/O

5 12 pF

+5-VOLT OPERATION

RECOMMENDED DC OPERATING CONDITIONS (TA= -40°C to +85°C)

PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

Power Supply Voltage V

CC

4.5 5.0 5.5 V

Input High Voltage V

IH

2.0 VCC+0.3 V

Input Low Voltage V

IL

-0.3 0.8 V

Data Retention Voltage V

DR

2.0 5.5 V

DC CHARACTERISTICS (TA= -40°C to +85°C; VCC = 5V ±10%)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Input Leakage Current I

IL

0V ≤ VIN ≤ V

CC

±

0.1 µA

I/O Leakage Current I

LO

CE = V

IH

, 0V ≤ VIO ≤ V

CC

±

0.5 µA

Output High Current I

OH

VOH = 2.4V -1.0 mA

Output Low Current I

OL

VOL = 0.4V 4.0 mA

Standby Current I

CCS1

CE = 2.0V

0.3 mA

Standby Current I

CCS2

CE ≥ V

CC

-0.5V tA =60°C

1 µA

Standby Current I

CCS2

CE ≥ V

CC

-0.5V tA =25°C

100 nA

Operating Current I

CCO

CE = 0.8V, 200 ns cycle

55 mA

DS2016

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AC CHARACTERISTICS READ CYCLE (TA= -40°C to +85°C; VCC = 5V ±10%)

DS2016-100 DS2016-150

PARAMETER SYMBOL

MIN TYP MAX MIN TYP MAX

UNITS NOTES

Read Cycle Time t

RC

100 150 ns

Access Time t

ACC

100 150 ns

OE to Output Valid

t

OE

50 70 ns

CE to Output Valid

t

CO

100 150 ns

CE or OE to Output

Active

t

COE

5 5 ns

Output High-Z from
Deselection

t

OD

5 35 10 60 ns

Output Hold from
Address Change

t

OH

5 10 ns

AC CHARACTERISTICS WRITE CYCLE (TA= -40°C to +85°C; VCC = 5V±10%)

DS2016-100 DS2016-150

PARAMETER SYMBOL

MIN TYP MAX MIN TYP MAX

UNITS NOTES

Write Cycle Time t

WC

100 150 ns

Write Pulse Width t

WP

75 120 ns

Address Setup Time t

AW

0 0 ns

Write Recovery
Time

t

WR

10 10 ns

Output High-Z from

WE

t

ODW

35 70 ns

Output Active from

WE

t

OEW

5 5 ns

Data Setup Time t

DS

40 60 ns

Data Hold Time t

DH

0 0 ns

DATA RETENTION CHARACTERISTICS (TA = -40°C to +85°C)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Data Retention Supply
Voltage

V

DR

CE ≥ V

CC

- 0.5V

2.0 5.5 V

Data Retention
Current at 5.5V

I

CCR1

CE ≥ V

CC

- 0.5V

0.1* 1 µA

Data Retention
Current at 2.0V

I

CCR2

CE ≥ V

CC

- 0.5V

50* 750 nA

Chip Deselect to Data
Retention

t

CDR

0 µs

Recovery Time t

R

2 ms

* Typical values are at 25°C