Dallas Semiconductor DS12B887 Datasheet

DS12B887
DS12B887
Real Time Clock
Drop-in replacement for IBM AT computer clock/cal-
endar
Pin compatible with the MC146818B and DS1287
Totally nonvolatile with over 10 years of operation in
the absence of power
Self-contained subsystem includes lithium, quartz,
and support circuitry
Counts seconds, minutes, hours, days, day of the
week, date, month, and year with leap year com­pensation
Binary or BCD representation of time, calendar, and
alarm
12- or 24-hour clock with AM and PM in 12-hour mode
Daylight Savings Time option
Multiplex bus for pin efficiency
Interfaced with software as 128 RAM locations
– 14 bytes of clock and control registers – 114 bytes of general purpose RAM
Programmable square wave output signal
Bus-compatible interrupt signals (IRQ)
Three interrupts are separately software-maskable
and testable
– Time-of-day alarm once/second to once/day – Periodic rates from 122 µs to 500 ms – End of clock update cycle
PIN ASSIGNMENT
NC
1
NC
2
NC
3
AD0
4
AD1
5
AD2
6
AD3
7
AD4
8
AD5
9
AD6
10
AD7
11
GND
12
24 PIN ENCAPSULATED PACKAGE
V
24
CC
23
SQW
22
NC
21
RCLR NC
20
IRQ
19
NC
18
DS
17
NC
16
R/W
15
AS
14
CS
13
PIN DESCRIPTION
AD0-AD7 – Multiplexed Address/Data Bus NC – No Connection CS AS – Address Strobe R/W – Read/Write Input DS – Data Strobe IRQ – Interrupt Request Output SQW – Square Wave Output V
CC
GND – Ground RCLR – RAM Clear
– Chip Select
– +5 Volt Supply
DESCRIPTION
The DS12B887 Real Time Clock plus RAM is designed to be a direct replacement for the DS1287A or DS12887A. The DS12B887 is identical in form, fit, and function to the DS1287A or DS12887A, with the excep­tion of RCLR purpose RAM. Access to this additional RAM space is determined by the logic level presented on AD6 during the address portion of an access cycle. A lithium energy source, quartz crystal, and write-protection circuitry are
Copyright 1995 by Dallas Semiconductor Corporation. All Rights Reserved. For important information regarding patents and other intellectual property rights, please refer to Dallas Semiconductor data books.
, and has an additional 64 bytes of general
contained within a 24-pin dual in-line package. As such, the DS12B887 is a complete subsystem replacing 16 components in a typical application. The functions include a nonvolatile time-of-day clock, an alarm, a one­hundred-year calendar, programmable interrupt, square wave generator, and 114 bytes of nonvolatile static RAM. The real time clock is distinctive in that time-of-day and memory are maintained even in the absence of power.
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DS12B887
OPERATION
The block diagram in Figure 1 shows the pin connec­tions with the major internal functions of the DS12B887.
BLOCK DIAGRAM DS12B887 Figure 1
The following paragraphs describe the function of each pin.
CS
V
V
DS
R/W
AS
ADO– AD7
CC
BAT
CS
OSC.
POWER SWITCH
AND
WRITE
PROTECT
BUS
INTERFACE
V
CC
POK
CLOCK/
CALENDAR
UPDATE
BCD/
BINARY
INCREMENT
8 64 64
PERIODIC INTERRUPT/SQUARE WAVE
SELECTOR
REGISTERS A,B,C,D
CLOCK, CALENDAR,
AND ALARM RAM
USER RAM 114 BYTES
WAVE OUT
SQUARE
RAM
CLEAR
LOGIC
SQW
IRQ
DOUBLE
BUFFERED
RCLR
POWER-DOWN/POWER-UP CONSIDERATIONS
The Real Time Clock function will continue to operate and all of the RAM, time, calendar, and alarm memory locations remain nonvolatile regardless of the level of the VCC input. When VCC is applied to the DS12B887 and reaches a level of greater than 4.25 volts, the device becomes accessible after 200 ms, provided that the oscillator is running and the oscillator countdown chain is not in reset (see Register A). This time period allows the system to stabilize after power is applied. When
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falls below 4.25 volts, the chip select input is inter-
V
CC
nally forced to an inactive level regardless of the value of CS at the input pin. The DS12B887 is, therefore, write­protected. When the DS12B887 is in a write-protected state, all inputs are ignored and all outputs are in a high impedance state. When V
falls below a level of
CC
approximately 3 volts, the external VCC supply is switched off and an internal lithium energy source sup­plies power to the Real Time Clock and the RAM memory.
DS12B887
tPI PERIODIC
SQW OUTPUT
SIGNAL DESCRIPTIONS
GND, VCC - DC power is provided to the device on these pins. V
is the +5 volt input. When 5 volts are applied
CC
within normal limits, the device is fully accessible and data can be written and read. When VCC is below 4.25 volts typical, reads and writes are inhibited. However, the timekeeping function continues unaffected by the lower input voltage. As V
falls below 3 volts typical,
CC
the RAM and timekeeper are switched over to an inter­nal lithium energy source. The timekeeping function maintains an accuracy of ±1 minute per month at 25oC regardless of the voltage input on the V
CC
pin.
SQW (Square Wave Output) - The SQW pin can output a signal from one of 13 taps provided by the 15 internal divider stages of the Real Time Clock. The frequency of the SQW pin can be changed by programming Register A as shown in T able 1. The SQW signal can be turned on and off using the SQWE bit in Register B. The SQW signal is not available when V
is less than 4.25 volts
CC
typical.
PERIODIC INTERRUPT RATE AND SQUARE WAVE OUTPUT FREQUENCY Table 1
SELECT BITS REGISTER A
RS3 RS2 RS1 RS0
0 0 0 0 None None 0 0 0 1 3.90625 ms 256 Hz 0 0 1 0 7.8125 ms 128 Hz 0 0 1 1 0 1 0 0 0 1 0 1 0 1 1 0 0 1 1 1 1.953125 ms 512 Hz 1 0 0 0 3.90625 ms 256 Hz 1 0 0 1 7.8125 ms 128 Hz 1 0 1 0 15.625 ms 64 Hz 1 0 1 1 31.25 ms 32 Hz 1 1 0 0 62.5 ms 16 Hz 1 1 0 1 125 ms 8 Hz 1 1 1 0 250 ms 4 Hz 1 1 1 1 500 ms 2 Hz
tPI PERIODIC SQW OUTPUT
INTERRUPT RATE
122.070 s
244.141 s
488.281 s
976.5625 s
FREQUENCY
8.192 kHz
4.096 kHz
2.048 kHz
1.024 kHz
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DS12B887
AD0-AD7 (Multiplexed Bidirectional Address/Data Bus) - Multiplexed buses save pins because address
information and data information time share the same signal paths. The addresses are present during the first portion of the bus cycle and the same pins and signal paths are used for data in the second portion of the cycle. Address/data multiplexing does not slow the access time of the DS12B887 since the bus change from address to data occurs during the internal RAM access time. Addresses must be valid prior to the falling edge of AS/ ALE, at which time the DS12B887 latches the address from AD0 to AD6. Valid write data must be present and held stable during the latter portion of the DS or WR pulses. In a read cycle the DS12B887 outputs 8 bits of data during the latter portion of the DS or RD
pulses. The read cycle is terminated and the bus returns to a high impedance state as RD
transitions high.
AS (Address Strobe Input) - A positive going address strobe pulse serves to demultiplex the bus. The falling edge of AS/ALE causes the address to be latched within the DS12B887.
DS (Data Strobe or Read Input) - The DS pin is called Read(RD
). RD identifies the time period when the DS12B887 drives the bus with read data. The RD signal is the same definition as the Output Enable (OE) signal on a typical memory.
R/W
(Read/Write Input)-The R/W signal is an active low
signal called WR. In this mode the R/W pin has the same meaning as the Write Enable signal (WE) on generic RAMs.
CS
(Chip Select Input) - The Chip Select signal must
be asserted low for a bus cycle in the DS12B887 to be accessed. CS
must be kept in the active state during RD and WR. Bus cycles which take place without asserting CS occur. When V
will latch addresses but no access will
is below 4.25 volts, the DS12B887
CC
internally inhibits access cycles by internally disabling
the CS
input. This action protects both the real time
clock data and RAM data during power outages.
IRQ
(Interrupt Request Output) - The IRQ pin is an
active low output of the DS12B887 that can be used as an interrupt input to a processor. The IRQ
output remains low as long as the status bit causing the interrupt is pres­ent and the corresponding interrupt-enable bit is set. To clear the IRQ
pin the processor program normally reads
the C register. When no interrupt conditions are present, the IRQ level is
in the high impedance state. Multiple interrupting devices can be connected to an IRQ bus. The IRQ bus is an open drain output and requires an external pull-up resistor.
RCLR
(RAM Clear) - The RCLR pin is used to clear (set
to logic 1) all 114 bytes of general-purpose RAM but does not affect the RAM associated with the real time clock. In order to clear the RAM, RCLR must be forced to an input logic of (-0.3 to +0.8 volts) when V plied. The RCLR
function is designed to be used via hu-
CC
is ap-
man interface (shorting to ground manually or by switch) and not to be driven with external buffers. This pin is in­ternally pulled up. Do not use an external pull-up resistor on this pin.
ADDRESS MAP
The address map of the DS12B887 is shown in Figure 2. The address map consists of 114 bytes of user RAM, 10 bytes of RAM that contain the RTC time, calendar , and alarm data, and four bytes which are used for control and status. All 128 bytes can be directly written or read except for the following:
1. Registers C and D are read-only.
2. Bit 7 of Register A is read-only.
3. The high order bit of the seconds byte is read-only.
The contents of four registers (A,B,C, and D) are described in the “Registers” section.
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ADDRESS MAP DS12B887 Figure 2
DS12B887
0
14 BYTES
13
14
127
00
0D
0E
7F
TIME, CALENDAR AND ALARM LOCATIONS
The time and calendar information is obtained by read­ing the appropriate memory bytes. The time, calendar, and alarm are set or initialized by writing the appropriate RAM bytes. The contents of the ten time, calendar, and alarm bytes can be either Binary or Binary-Coded Deci­mal (BCD) format. Before writing the internal time, cal­endar, and alarm registers, the SET bit in Register B should be written to a logic one to prevent updates from occurring while access is being attempted. In addition to writing the ten time, calendar, and alarm registers in a selected format (binary or BCD), the data mode bit (DM) of Register B must be set to the appropriate logic level. All ten time, calendar, and alarm bytes must use the same data mode. The set bit in Register B should be cleared after the data mode bit has been written to allow the real time clock to update the time and calendar bytes. Once initialized, the real time clock makes all updates in the selected mode. The data mode cannot be changed without reinitializing the ten data bytes. Table 2 shows the binary and BCD formats of the ten time, calendar, and alarm locations. The 24-12 bit can­not be changed without reinitializing the hour locations. When the 12-hour format is selected, the high order bit of the hours byte represents PM when it is a logic one.
0
1
2
3
4
5
6
7
8
9
10
11
12
13
SECONDS
SECONDS ALARM
MINUTES
MINUTES ALARM
HOURS
HOURS ALARM
DAY OF THE WEEK
DAY OF THE MONTH
MONTH
YEAR
REGISTER A
REGISTER B
REGISTER C
REGISTER D
BINARY OR BCD INPUTS
The time, calendar, and alarm bytes are always acces­sible because they are double buffered. Once per second the ten bytes are advanced by one second and checked for an alarm condition. If a read of the time and calendar data occurs during an update, a problem exists where seconds, minutes, hours, etc. may not correlate. The probability of reading incorrect time and calendar data is low. Several methods of avoiding any possible incorrect time and calendar reads are covered later in this text.
The three alarm bytes can be used in two ways. First, when the alarm time is written in the appropriate hours, minutes, and seconds alarm locations, the alarm inter­rupt is initiated at the specified time each day if the alarm enable bit is high . The second use condition is to insert a “don’t care” state in one or more of the three alarm bytes. The “don’t care” code is any hexadecimal value from C0 to FF . The two most significant bits of each byte set the “don’t care” condition when at logic 1. An alarm will be generated each hour when the “don’t care” bits are set in the hours byte. Similarly, an alarm is gener­ated every minute with “don’t care” codes in the hours and minute alarm bytes. The “don’t care” codes in all three alarm bytes create an interrupt every second.
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