Dallas Semiconductor DS1230YP-70-IND, DS1230YP-70, DS1230YP-100, DS1230Y-85, DS1230Y-70-IND Datasheet

www.dalsemi.com

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DS1230Y/AB

256k Nonvolatile SRAM

FEATURES

 10 years minimum data retention in the

absence of external power

 Data is automatically protected during power

loss

 Replaces 32k x 8 volatile static RAM,

EEPROM or Flash memory

 Unlimited write cycles
 Low-power CMOS
 Read and write access times as fast as 70 ns
 Lithium energy source is electrically

disconnected to retain freshness until power is
applied for the first time

 Full ±10% VCC operating range (DS1230Y)
 Optional ±5% VCC operating range

(DS1230AB)

 Optional industrial temperature range of

-40°C to +85°C, designated IND

 JEDEC standard 28-pin DIP package
 New PowerCap Module (PCM) package

- Directly surface-mountable module

- Replaceable snap-on PowerCap provides

lithium backup battery

- Standardized pinout for all nonvolatile

SRAM products

- Detachment feature on PowerCap allows

easy removal using a regular screwdriver

PIN ASSIGNMENT

NC
NC
NC
NC

V

WE

OE
CE

DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0

GND

A14
A12

DQ0
DQ1
DQ2

GND

28-Pin ENCAPSULATED PACKAGE

CC

34-Pin POWERCAP MODULE (PCM)

1
2

A7

3
4

A6
A5

5

A4

6

A3

7

A2

8

A1

9
10

A0

11
12

13
14

740-mil EXTENDED

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17

(USES DS9034PC POWERCAP)

GND

28

V

27

WE

26
25

24
23

22
21

20
19

18
17

16
15

V

BAT

8
9
11

OE

10

CE
DQ7
DQ6
DQ5
DQ4

DQ3

34
33
32
31
30
29
28

27
26
25
24
23
22
21
20
19
18

NC
NC

14
12
10
8

5
4
3

1
0

PIN DESCRIPTION

A0 - A14 - Address Inputs
DQ0 - DQ7 - Data In/Data Out

CE - Chip Enable
WE - Write Enable
OE - Output Enable

V

- Power (+5V)

CC

GND - Ground
NC - No Connect

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DS1230Y/AB

DESCRIPTION

The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as
32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry
which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the
lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static
RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the
pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devices
in the Low Profile Module package are specifically designed for surface-mount applications. There is no
limit on the number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.

READ MODE

The DS1230 devices execute a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip
Enable) and OE (Output Enable) are active (low). The unique address specified by the 15 address inputs

(A0 - A14) defines which of the 32,768 bytes of data is to be accessed. Valid data will be available to the
eight data output drivers within t

that CE and OE (Output Enable) access times are also satisfied. If OE and CE access times are not
satisfied, then data access must be measured from the later-occurring signal (CE or OE ) and the limiting
parameter is either tCO for CE or tOE for OE rather than address access.

(Access Time) after the last address input signal is stable, providin g

ACC

WRITE MODE

The DS1230 devices execute a write cycle whenever the WE and CE signals are active (low) after
address inputs are stable. The later-occurring falling edge of CE or WE will determine the start of the
write cycle. The write cycle is terminated by the earlier rising edge of CE or WE . All address inputs must
be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time
(tWR) before another cycle can be initiated. The OE control signal should be kept inactive (high) during
write cycles to avoid bus contention. However, if the output drivers are enabled (CE and OE active) then

WE will disable the outputs in t

from its falling edge.

ODW

DATA RETENTION MODE

The DS1230AB provides full functional capability for VCC greater than 4.75 volts and write protects by

4.5 volts. The DS1230Y provides full functional capability for V
protects by 4.25 volts. Data is maintained in the absence of VCC without any additional support circuitry.
The nonvolatile static RAMs constantly monitor VCC. Should the supply voltage decay, the NV SRAMs
automatically write protect themselves, all inputs become “don’t care,” and all outputs become high­impedance. As V

falls below approximately 3.0 volts, a power switching circuit connects the lithium

CC

energy source to RAM to retain data. During power-up, when VCC rises above approximately 3.0 volts
the power switching circuit connects external VCC to RAM and disconnects the lithium energy source.
Normal RAM operation can resume after V

exceeds 4.75 volts for the DS1230AB and 4.5 volts for the

CC

DS1230Y.

greater than 4.5 volts and write

CC

FRESHNESS SEAL

Each DS1230 device is shipped from Dallas Semiconductor with its lithium energy source disconnected,
guaranteeing full energy capacit y. When V
energy source is enabled for battery back-up operation.

is first applied at a level greater than 4.25 volts, the lithium

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DS1230Y/AB

PACKAGES

The DS1230 devices are available in two packages: 28-pin DIP and 34-pin PowerCap Module (PCM).
The 28-pin DIP integrates a lithium battery, an SRAM memory and a nonvolatile control function into a
single package with a JEDEC-standard, 600-mil DIP pinout. The 34-pin PowerCap Module integrates
SRAM memory and nonvolatile control along with contacts for connection to the lithium battery in the
DS9034PC PowerCap. The PowerCap Module package design allows a DS1230 PCM device to be
surface mounted without subjecting its lithium backup battery to destructive high-temperature reflow
soldering. After a DS1230 PCM is reflow soldered, a DS9034PC PowerCap is snapped on top of the
PCM to form a complete Nonvolatile SRAM module. The DS9034PC is keyed to prevent improper
attachment. DS1230 PowerCap Modules and DS9034PC PowerCaps are ordered separately and shipped
in separate containers. See the DS9034PC data sheet for further information.

ABSOLUTE MAXIMUM RATINGS*

Voltage on Any Pin Relative to Ground -0.3V to +7.0V
Operating Temperature 0°C to 70°C, -40°C to +85°C for IND parts
Storage Temperature -40°C to +70°C, -40°C to +85°C for IND parts
Soldering Temperature 260°C for 10 seconds

* This is a stress rating only and functional operation of the device at these or any other conditions

above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS (tA: See Note 10)

PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

DS1230AB Power Supply Voltage V
DS1230Y Power Supply Voltage V
Logic 1 V
Logic 0 V

CC

CC

IH

IL

4.75 5.0 5.25 V

4.5 5.0 5.5 V

2.2 V

CC

V

0.0 0.8 V

DC ELECTRICAL (VCC=5V ±=5% for DS1230AB)
CHARACTERISTICS (t

PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

Input Leakage Current I
I/O Leakage Current CE ≥ VIH ≤ V

Output Current @ 2.4V I
Output Current @ 0.4V I
Standby Current CE =2.2V

Standby Current CE =VCC-0.5V

CC

: See Note 10) (VCC=5V ±=10% for DS1230Y)

A

I

I

CCS1

I

CCS2

IL

IO

OH

OL

-1.0 +1.0

-1.0 +1.0

-1.0 mA

2.0 mA

5.0 10.0 mA

3.0 5.0 mA

µA
µA

Operating Current I
Write Protection Voltage (DS1230AB) V
Write Protection Voltage (DS1230Y) V

CCO1

TP

TP

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85 mA

4.50 4.62 4.75 V

4.25 4.37 4.5 V

DS1230Y/AB

CAPACITANCE (tA=25°C)

PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

Input Capacitance C
Input/Output Capacitance C

IN

I/O

510pF
510pF

AC ELECTRICAL (VCC=5V ±=5% for DS1230AB)
CHARACTERISTICS (t

DS1230AB-70

PARAMETER SYMBOL

Read Cycle

t

RC

Time
Access Time t

OE to Output

ACC

t

OE

Valid

CE to Output

t

CO

Valid

OE or CE to

t

COE

Output Active
Output High Z

t

OD

from
Deselection

DS1230Y-70

MIN MAX MIN MAX MIN MAX

70 85 100 ns

555 ns5

: See Note 10) (VCC=5V ±=10% for DS1230Y)

A

DS1230AB-85

DS1230Y-85

DS1230AB-100

DS1230Y-100

UNITS NOTES

70 85 100 ns
35 45 50 ns

70 85 100 ns

25 30 35 ns 5

Output Hold
from Address
Change

Write Cycle
Time

Write Pulse
Width

Address Setup
Time

Write Recovery
Time

Output High Z
from WE

Output Active
from WE

Data Setup
Time

Data Hold
Time

t

t

WC

t

WP

t

AW

t

WR1

t

WR2

t

ODW

t

OEW

t

t

DH1

t

DH2

OH

DS

555 ns

70 85 100 ns

55 65 75 ns 3

000 ns

5

15

5

15

5

15

ns 12

13

25 30 35 ns 5

555 ns5

30 35 40 ns 4

0

10

0

10

0

10

ns 12

13

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