MBTA42
SILICON EPITAXIAL TRANSISTORS
N-P-N TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
Descriptions
Storage Temperature
Junction Temperature
Maximum Power Dissipation (Ta=25 )
Maximum Collector to Base Voltage
Maximum Collector to Emitter Voltage
Maximum Emitter to Base Voltage
Maximum Collector Current (d.c.)
C
Symbol
T
stg
T
j
P
tot
V
CBO
V
CEO
V
EBO
I
C
Min.
55
Max.Typ.
150
150
250
300
300
6
500
Unit
C
C
mW
V
V
V
mA
MBTA42
1
2
1. BASE
3. EMITTER
2. COLLECTOR
Type SOT-23
Color Code Black
Marking MBTA42
3
ELECTRICAL CHARACTERISTICS Ta 25
Descriptions
DC Current Gain
Gain Bandwidth product
Feedback Capacitance
Collector Cut-off Current
Emitter Cut-off Current
Collector Saturation Voltage
Base Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
( )
Test Conditions
10V,
V I
CE C
10V,
V I
CE C
V I
10V,
CE C
V
20V,
CE
20V,
V
V
V
I
I
I
I
I
CB
CB
EB
C
C
C
C
C
I I
200V,
6V,
20mA,
20mA,
100uA,
1mA,
0mA,
I
C
E e
I
E
I
C
I
E
I
B
I
E
I
B
I
E
Pulse Test 300 S, Duty Cycle. 2%
THERMAL CHARACTERISTICS
Descriptions
Thermal Resistance at T P R +R +R +T
( )
j
th j-t th t-s th s-a
amb
C
1mA
10mA
30mA
10mA
0, mA,
0mA
0
2mA
2mA
0
0
100uA
1MHz
f
Symbol
R
th j-a
Symbol
h
FE1
h
FE2
h
FE3
f
T
C
re
I
CBO
I
EBO
V
( )
CE Sat
V
( )
BE Sat
BV
CBO
BV
CEO
BV
EBO
Min.
25
40
40
50
300
300
6
Typ.
500
Typ.
Max.
0.1
0.1
0.5
0.9
Max.Min.
P / N
Marking
Unit
MHz
F
P
uA
uA
V
V
V
V
V
Unit
K/W
MBTA42
1D
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