CYStech MTP3J15N3 Schematic [ru]
CYStech Electronics Corp.
50V P-CHANNEL Enhancement Mode MOSFET
Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2012.05.18
Page No. : 1/ 8
MTP3J15N3
ID -130mA
RDSON@VGS=-10V, ID=-100mA
RDSON@VGS=-5V, ID=-100mA
Features
BVDSS -50V
Low gate charge
•
Excellent thermal and electrical capabilities
•
Pb-free package
•
Equivalent Circuit Outline
MTP3J15N3
4.5Ω(typ)
6Ω(typ)
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Absolute Maximum Ratings (Tj=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage VDS -50 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current @ TA=25°C, VGS=-5V
Pulsed Drain Current (Note 1) IDM -520 mA
Maximum Power Dissipation @ TA=25℃
Thermal Resistance, Junction-to-Ambient Rth,ja 556
Maximum Lead Temperature for Soldering Purpose, 10 s TL 260
Operating Junction and Storage Temperature Tj, Tstg -55~+150
Note : 1. Pulse width≤ 10μs, duty cycle≤2%.
Symbol
ID -130 mA
P
D 225 mW
Limits Unit
°C/W
°C
°C
MTP3J15N3 CYStek Product Specification
CYStech Electronics Corp.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol Min. Typ. Max. Unit Test Conditions
Static
BV
V
*R
Dynamic
*t
*t
Source-Drain Diode
-50 - - V VGS=0V, ID=-250μA
DSS
-1 -1.4 -2 V VDS=VGS, ID=-1mA
GS(th)
GFS 100 - - mS VDS=-15V, ID=-100mA
I
- -
GSS
10
μA
VGS=±20V, VDS=0
±
- - -0.1 VDS=-25V, VGS=0
I
DSS
DS(ON)
- - -1 VDS=-50V, VGS=0
- - -25
- 6 10 VGS=-5V, ID=-100mA
- 5 8
μA
Ω
=-50V, VGS=0, Tj=125°C
V
DS
VGS=-10V, ID=-100mA
Ciss - 25 -
Coss - 7 -
pF VDS=-5V, VGS=0, f=1MHz
Crss - 2 -
- 2.5 -
d(ON)
*tr - 2 -
- 7.3 -
d(OFF)
ns
VDS=-15V, ID=-100mA, VGS=-5V,
RG=3.3Ω
*tf - 3 -
*Qg - 1.2 - nC VDS=-40V, ID=-500mA, VGS=-5V
*IS - - -130
*ISM - - -520
mA
*VSD - -0.85 -1.2 V VGS=0V, IS=-130mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2012.05.18
Page No. : 2/ 8
Ordering Information
Device Package Shipping Marking
MTP3J15N3
SOT-23
(Pb-free)
3000 pcs / Tape & Reel PD
MTP3J15N3 CYStek Product Specification
CYStech Electronics Corp.
GS
Typical Characteristics
Typical Output Characteristics
600
500
400
300
, Drain Current (mA)
200
D
-I
100
0
012345678910
, Drain-Source Voltage(V)
-V
DS
-VGS=5V
-VGS=4.5V
-VGS=4V
-VGS=3.5V
-VGS=3V
-VGS=2.5V
-VGS=2V
Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2012.05.18
Page No. : 3/ 8
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
, Normal iz ed Dra in-Sourc e
Breakdown Voltage
DSS
0.8
-BV
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-250μA,
V
=0V
Static Drain-Source On-State resistance vs Drain Current
12
11
10
9
8
7
Resistance(Ω)
, Static Drain-Source On-State
6
DS (on)
R
5
4
0.001 0.01 0.1 1
-VGS=3V
-VGS=5V
-VGS=10V
D
, Drain Current(A)
-I
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
20
18
16
14
12
ID=-100mA
I
=-30mA
D
, Static Drain-Source On-
R
DS( ON)
State Resistance(Ω)
10
8
6
4
2
0
024681
-V
, Gate-Source Voltage(V)
GS
, Source-Drain Voltage(V)
SD
-V
, Normalized Static Drain-
DS( ON)
R
0
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0 0.1 0.2 0.3 0.4 0.5
, Reverse Drain Current (A)
-I
DR
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8
1.6
1.4
VGS=-5V, ID=-100mA
1.2
1
0.8
Source On-State Resistance
0.6
VGS=-10V, ID=-100mA
0.4
-60 -20 20 60 100 140 180
Tj, Junction Temperature(°C)
MTP3J15N3 CYStek Product Specification
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