CYStech MTP3403AN3, MTP3413N3 Schematic [ru]
CYStech Electronics Corp.
P-Channel Logic Level Enhancement Mode MOSFET
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date :
Page No. : 1/8
MTP3413N3
Features
1.8V gate rated
•
Advanced trench process technology
•
High density cell design for ultra low on resistance
•
Pb-free lead plating and halogen-free package
•
Equivalent Circuit Outline
MTP3413N3
BVDSS -20V
ID -4.9A
RDSON(TYP)
VGS=-4.5V, ID=-4.3A
VGS=-2.5V, ID=-2.5A
VGS=-1.8V, ID=-2A
SOT-23
D
39mΩ
50mΩ
65mΩ
G：Gate
S：Source
D：Drain
G
S
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain Current @TC=25°C
Continuous Drain Current @TC=100°C
Pulsed Drain Current (Note 1&2) IDM -35 A
Maximum Power Dissipation @TA=25°C
Maximum Power Dissipation @TA=70°C
Operating Junction and Storage Temperature Tj, Tstg -55~+150
Note : 1. Pulse width limited by maximum junction temperature.
ID -4.9 A
ID -3.1 A
PD
1.38
W
0.88
°C
2. Pulse width≤300μs, duty cycle≤2%
MTP3413N3 CYStek Product Specification
Spec. No. : C394N3
CYStech Electronics Corp.
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance, Junction-to-Ambient (Note) Rth,ja 90
Issued Date : 2012.01.19
Revised Date :
Page No. : 2/8
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol Min. Typ. Max. Unit Test Conditions
Static
BV
V
-20 - - V VGS=0, ID=-250µA
DSS
-0.4 -0.6 -0.95 V VDS=VGS, ID=-250µA
GS(th)
I
- - ±100 nA VGS=±8V, VDS=0
GSS
I
DSS
- - -1 µA VDS=-20V, VGS=0
- - -10 µA VDS=-20V, VGS=0, Tj=55°C
- 39 50 VGS=-4.5V, ID=-4.3A
*R
DS(ON)
- 50 60 VGS=-2.5V, ID=-2.5A
- 65 75
mΩ
VGS=-1.8V, ID=-2.0A
Dynamic
Ciss - 1220 -
Coss - 103 -
pF VDS=-10V, VGS=0, f=1MHz
Crss - 92 -
*t
*t
- 12.5 -
d(ON)
*tr - 12 -
- 70 -
d(OFF)
ns
VDS=-10V, ID=-1A, VGS=-4.5V, RD=10Ω,
=6Ω
R
G
*tf - 20 -
*Qg - 10 -
*Qgs - 1.9 -
nC VDS=-10V, ID=-4.3A, VGS=-4.5V
*Qgd - 2.7 -
Source-Drain Diode
*ISD - - -1.3
*ISM - - -35
A
*VSD - -0.76 -1 V VGS=0V, IS=-1.3A
*trr - 23 - ns
*Qrr - 8.5 - nC
IS=-1.3A, VGS=0V, dI/dt=100A/µs
*Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%
Ordering Information
Device Package Shipping
MTP3413N3
(Pb-free lead plating and halogen-free package)
SOT-23
3000 pcs / Tape & Reel
MTP3413N3 CYStek Product Specification
V
V
V
GS
Typical Characteristics
Typical Output Characteristics
20
5V
4.5
4V
15
3.5
3V
2.5
10
Drain Current (A)
,
D
-I
5
0
012345
Static Drain-Source On-State resistance vs Drain Current
1000
-V
Drain-Source Voltage(V)
,
DS
CYStech Electronics Corp.
Brekdown Voltage vs Ambient Temperature
30
28
26
-VGS=1.8V
-VGS=1.5V
(V)
24
, Drain-Source Breakdown Voltage
22
DSS
-BV
20
-75 -50 -25 0 25 50 75 100 125 150 175
Reverse Drain Current vs Source-Drain Voltage
1.2
Spec. No. : C394N3
Issued Date : 2012.01.19
Revised Date :
Page No. : 3/8
Tj, Junction Temperature(°C)
ID=-250μA,
=0V
V
100
VGS=-1.8V
VGS=-2.5V
VGS=0V
1
0.8
Tj=25°C
Tj=150°C
0.6
Resistance(mΩ)
, Static Drain-Source On-State
DS (on)
R
VGS=-4.5V
10
0.001 0.01 0.1 1 10
D
, Drain Curre nt(A)
-I
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160
140
120
, Static Drain-Source On-
DS( ON)
R
State Resistance(mΩ)
100
80
60
40
ID=-4.3A
=-2.5A
I
D
=-0.2A
I
D
20
0
024681
-V
, Gate-Source Voltage(V)
GS
VGS=-10V
0
, Source-Drain Voltage(V)
SD
0.4
-V
0.2
024681
, Reverse Drain Current (A)
-I
Drain-Source On-State Resistance vs Junction Tempearture
DR
0
100
90
80
VGS=-1.8V, ID=-2A
VGS=-2.5V, ID=-2.5A
70
60
50
Resistance(mΩ)
, Static Drain-Source On-State
40
DS( ON)
30
R
VGS=-4.5V, ID=-4.3A
20
-60 -20 20 60 100 140 180
Tj, Junction Temperature(°C)
MTP3413N3 CYStek Product Specification
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