CYStech MTP2311N3 Schematic [ru]
CYStech Electronics Corp.
-60V P-CHANNEL Enhancement Mode MOSFET
Spec. No. : C733N3
Issued Date : 2011.12.27
Revised Date :
Page No. : 1/8
MTP2311N3
Features
Low gate charge
•
Compact and low profile SOT-23 package
•
Advanced trench process technology
•
High density cell design for ultra low on resistance
•
Pb-free lead plating package
•
ID -3.5A
RDSON@VGS=-10V, ID=-2A
RDSON@VGS=-4.5V,ID=-1.7A
Symbol Outline
MTP2311N3
BVDSS -60V
72mΩ(typ)
98mΩ(typ)
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current @ TA=25°C (Note 3)
Continuous Drain Current @ TA=100°C (Note 3)
Pulsed Drain Current (Notes 1, 2) IDM -14 A
Maximum Power Dissipation (Note 3)
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Symbol Limits Unit
ID
PD 1.38 W
0.01
-3.5 A
-2.2 A
W/°C
°C
MTP2311N3 CYStek Product Specification
Thermal Performance
Parameter Symbol Limit Unit
CYStech Electronics Corp.
Spec. No. : C733N3
Issued Date : 2011.12.27
Revised Date :
Page No. : 2/8
Thermal Resistance, Junction-to-Ambient(PCB mounted) Rth,ja 90
Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol Min. Typ. Max. Unit Test Conditions
Static
BV
∆BV
V
*R
Dynamic
Source-Drain Diode
-60 - - V VGS=0, ID=-250μA
DSS
/∆Tj - 0.04 -
DSS
-1.0 -1.8 -3.0 V VDS=VGS, ID=-250μA
GS(th)
±
I
- -
GSS
I
DSS
- - -1 VDS=-48V, VGS=0
- - -25
100
V/°C Reference to 25°C, ID=-1mA
V
nA
μA
=±20V, VDS=0
GS
VDS=-48V, VGS=0 (Tj=70
- 72 90 ID=-2A, VGS=-10V
DS(ON)
- 98 120
mΩ
ID=-1.7A, VGS=-4.5V
*GFS - 5.8 - S VDS=-5V, ID=-3A
Ciss - 962 -
Coss - 56 -
pF VDS=-20V, VGS=0, f=1MHz
Crss - 40 -
t
- 5.9 -
d(ON)
V
=-20V, ID=-1A, VGS=-10V
tr - 5.7 -
t
- 19.2 -
d(OFF)
ns
DS
RG=6Ω
tf - 6 -
Qg - 11 -
Qgs - 3.4 -
nC V
=-30V, ID=-3.5A, VGS=-10V
DS
Qgd - 3.4 -
*IS - - -3.5
*ISM - - -14 A
*VSD - - -1.3 V VGS=0V, IF=IS
Trr - 12 - ns
Qrr - 7 - nC
VGS=0V, IF=-3.5A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
°C)
°C/W
Ordering Information
Device Package Shipping Marking
MTP2311N3
(Pb-free lead plating package)
SOT-23
3000 pcs / Tape & Reel 2311
MTP2311N3 CYStek Product Specification
CYStech Electronics Corp.
V
V
GS
V
Typical Characteristics
Spec. No. : C733N3
Issued Date : 2011.12.27
Revised Date :
Page No. : 3/8
Typical Output Characteristics
20
15
10
Drain Current (A)
,
D
-I
1000
100
Resistance(mΩ)
, Static Drain-Source On-State
DS( on )
R
10V
9V
8V
7V
6V
4.5
5
0
012345
Drain-Source Voltage(V)
-V
,
DS
Static Drain-Source On-State resistance vs Drain Current
VGS=-3.5V
VGS=-3V
VGS=-4.5V
10
0.001 0.01 0.1 1 10
-I
, Drain Current(A)
D
-VGS=4V
-VGS=3.5V
-VGS=3
-VGS=2.5V
VGS=-4
VGS=-10V
Brekdown Voltage vs Ambient Temperature
80
75
70
(V)
65
60
, Drain-Source Breakdown Voltage
DSS
55
-BV
ID=-250μA,
=0V
V
50
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
, Source-Drain Voltage(V)
SD
0.4
-V
0.2
024681
, Reverse Drain Current (A)
-I
DR
0
Drain-Source On-State Resistance vs Junction Tempearture
160
150
140
130
VGS=-4.5V, ID=-1.7A
120
110
100
90
80
70
Resistance(mΩ)
60
VGS=-10V, ID=-2A
50
40
30
20
-60 -20 20 60 100 140 180
Tj, Junction Temperature(°C)
, Static Drain-Source On-
R
DS( ON)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160
140
120
100
ID=-2A
I
=-1.7A
D
80
60
State Resistance(mΩ)
40
20
0
024681
-V
, Gate-Source Voltage(V)
GS
0
, Static Drain-Source On-State
DS( ON)
R
MTP2311N3 CYStek Product Specification
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